Zobrazeno 1 - 7
of 7
pro vyhledávání: '"J. J. Boeckl"'
Autor:
Arthur J. Pitera, J. J. Boeckl, Minjoo L. Lee, Brian Keyes, Steven A. Ringel, C. L. Andre, Eugene A. Fitzgerald, David M. Wilt
Publikováno v:
Applied Physics Letters. 84:3447-3449
The minority carrier lifetime of electrons (τn) in p-type GaAs double heterostructures grown on GaAs substrates and compositionally graded Ge/Si1−xGex/Si (SiGe) substrates with varying threading dislocation densities (TDDs) were measured at room t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac04450036cedec1da0c8b23e786dd8c
https://doi.org/10.1063/1.1736318
https://doi.org/10.1063/1.1736318
Publikováno v:
Applied Physics Letters. 75:2111-2113
Topographic changes and surface contact potential variations near defects on the surface of AlGaAs/GaAs double heterojunction structures grown on Ge substrates are studied using scanning force microscope and electrostatic force microscope. Comparison
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::888f59f88d41d391a650c0b756bc3e4e
https://doi.org/10.1063/1.124933
https://doi.org/10.1063/1.124933
Autor:
J. J. Boeckl, Minjoo L. Lee, Arthur J. Pitera, Steven A. Ringel, O. Kwon, Eugene A. Fitzgerald
Publikováno v:
MRS Proceedings. 799
AlGaInP visible resonant cavity light emitting diodes (RCLEDs) were grown and fabricated on low-dislocation density, SiGe/Si metamorphic substrates by molecular beam epitaxy. A comparison with devices grown on GaAs and Ge substrates showed that not o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fde6ea04a7be7f93b336d2622912587
https://doi.org/10.1557/proc-799-z3.4
https://doi.org/10.1557/proc-799-z3.4
Autor:
Robert Kaplar, Steven R. Kurtz, D. Kwon, Eric D. Jones, A. A. Allerman, S.A. Ringel, J. J. Boeckl
Publikováno v:
MRS Proceedings. 535
Deep level defects in MOCVD-grown, unintentionally doped p-type InGaAsN films lattice matched to GaAs were investigated using deep level transient spectroscopy (DLTS) measurements. As-grown p-InGaAsN showed broad DLTS spectra suggesting that there ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::865389cf700d7b88a1f0700c06e8ac78
https://doi.org/10.1557/proc-535-59
https://doi.org/10.1557/proc-535-59
Autor:
Arthur J. Pitera, J. J. Boeckl, O. Kwon, Steven A. Ringel, Minjoo Lawrence Lee, Eugene A. Fitzgerald
Publikováno v:
Journal of Applied Physics. 100:013103
Room temperature operation of visible AlGaInP laser diodes epitaxially integrated on Si was demonstrated. Compressively strained laser heterostructures were grown by molecular beam epitaxy (MBE) on low dislocation density SiGe∕Si substrates, where
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e72567cb67b9538aff404d63280d320a
https://doi.org/10.1063/1.2209068
https://doi.org/10.1063/1.2209068
Autor:
Arthur J. Pitera, Steven A. Ringel, O. Kwon, Minjoo Lawrence Lee, J. J. Boeckl, Eugene A. Fitzgerald
Publikováno v:
Journal of Applied Physics. 97:034504
Visible AlGaInP resonant cavity light emitting diodes (RCLEDs) were grown by molecular beam epitaxy and fabricated on low-dislocation density, SiGe∕Si metamorphic substrates. A comparison with identical devices grown on GaAs and Ge substrates shows
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d5b631f5338fe96cbb99e98f0065569
https://doi.org/10.1063/1.1835539
https://doi.org/10.1063/1.1835539
Autor:
Fairchild SB; Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433, USA., Boeckl J, Back TC, Ferguson JB, Koerner H, Murray PT, Maruyama B, Lange MA, Cahay MM, Behabtu N, Young CC, Pasquali M, Lockwood NP, Averett KL, Gruen G, Tsentalovich DE
Publikováno v:
Nanotechnology [Nanotechnology] 2015 Mar 13; Vol. 26 (10), pp. 105706. Date of Electronic Publication: 2015 Feb 19.