Zobrazeno 1 - 10
of 11
pro vyhledávání: '"J. Israel Ramirez"'
Autor:
Kevin D. Leedy, Yuanyuan V. Li, J. Israel Ramirez, Gregg H. Jessen, Thomas N. Jackson, Burhan Bayraktaroglu, Hitesh A. Basantani
Publikováno v:
IEEE Transactions on Nuclear Science. 62:1399-1404
We report effects for up to 100 Mrad ( ${{\rm SiO}_2}$ ) gamma-ray exposure on polycrystalline ZnO thin film transistors (TFTs) deposited by two different techniques. The radiation related TFT changes, either with or without electrical bias during ir
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We have fabricated ZnO thin film transistors (TFTs) on rigid and flexible substrates with characteristics well suited for displays and more general microelectronic applications. Using weak-reactant plasma enhanced atomic layer deposition (PEALD) we h
Publikováno v:
IEEE Electron Device Letters. 34:1530-1532
Cost-effective integration of a-Si:H solar cells and oxide-based thin-film transistor (TFT) circuits may lead to broader battery-free device applications. We demonstrate a n-i-p a-Si:H 15-series connected solar cell that supplies power to a ZnO-based
Autor:
J. Israel Ramirez, Vincenzo Cotroneo, Raegan L. Johnson-Wilke, Brian D. Ramsey, Daniel A. Schwartz, Jeffery J. Kolodziejczak, Susan Trolier-McKinstry, Jay Bookbinder, Paul B. Reid, William R. Forman, Mark D. Freeman, Ryan Allured, Thomas N. Jackson, Alexey Vikhlinin, Rudeger H. T. Wilke, Mikhail V. Gubarev, Stuart McMuldroch, Harvey Tananbaum, Stephen L. O'Dell
Publikováno v:
SPIE Proceedings.
Addressing the astrophysical problems of the 2020's requires sub-arcsecond x-ray imaging with square meter effective area. Such requirements can be derived, for example, by considering deep x-ray surveys to find the young black holes in the early uni
Autor:
Charles B. Yeager, Kaige G. Sun, Susan Trolier-McKinstry, J. Israel Ramirez, Hong Goo Yeo, Xiaokun Ma, Christopher D. Rahn, Thomas N. Jackson
Publikováno v:
Volume 2: Mechanics and Behavior of Active Materials; Integrated System Design and Implementation; Bioinspired Smart Materials and Systems; Energy Harvesting.
The development of self-powered wireless microelectromechanical (MEMS) sensors hinges on the ability to harvest adequate energy from the environment. When solar energy is not available, mechanical energy from ambient vibrations, which are typically l
Publikováno v:
71st Device Research Conference.
Radiation tolerance is of interest in electronic applications such as radiation sensors, nuclear reactors, x-ray imagers, and high-energy particle accelerators. While properly designed Si MOSFETS are usefully radiation resistant, most thin-film trans
Autor:
Joan M. Redwing, Nikolas J. Podraza, Haoting Shen, Xin Wang, Yuanyuan V. Li, Chito E. Kendrick, Thomas N. Jackson, Yu Yuwen, Elizabeth C. Dickey, J. Israel Ramirez, Yue Ke, Theresa S. Mayer
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
Radial junction Si pillar array solar cells based on the heterojunction with intrinsic thin layer (HIT) structure were fabricated from p-type crystal Si (c-Si) wafers of different doping densities. The HIT structure consisting of intrinsic/n-type hyd
Publikováno v:
71st Device Research Conference.
In oxide semiconductors, defect chemistry and hydrogen can influence free carrier concentration and these materials can have strong interactions with the atmosphere and contaminents.[1,2] An inverted staggered structure is commonly used for oxide TFT
Publikováno v:
70th Device Research Conference.
We report here double-gate ZnO thin film transistor (TFT) circuits with operation at low voltage. TFTs with low voltage operation have been reported previously, but often use very thin (few nm thick) gate dielectric which may limit manufacturability
Publikováno v:
2011 International Semiconductor Device Research Symposium (ISDRS).
We report double-gate ZnO thin film transistors fabricated using weak reactant plasma enhanced atomic layer deposition (PEALD) with a maximum process temperature of 200˚C. When operated as bottom gate only devices the TFTs have linear region mobilit