Zobrazeno 1 - 10
of 24
pro vyhledávání: '"J. Iacoponi"'
Autor:
Theodorus E. Standaert, Veeraraghavan S. Basker, Sivananda K. Kanakasabapathy, M.V. Khare, Jeffrey B. Johnson, C.-C. Yeh, J. Iacoponi, Balasubramanian S. Haran, Vimal Kamineni, Neeraj Tripathi, H. Bu, Tenko Yamashita, Andres Bryant, Abhijeet Paul, T. Hook, Johnathan E. Faltermeier, Jin Cho, Gen Tsutsui
Publikováno v:
2013 IEEE International Electron Devices Meeting.
A first time rigorous experimental study of effective current (Ieff) variability in high-volume manufacturable (HVM) 14nm Silicon-On-Insulator (SOI) FINFETs is reported which identifies, threshold voltage (Vtlin), external resistance (Rext), and chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32e6047a13b712382d3a6925c0068ab4
https://doi.org/10.1109/iedm.2013.6724625
https://doi.org/10.1109/iedm.2013.6724625
Publikováno v:
IEEE Electron Device Letters. 28:691-693
This letter reports a selective metal deposition process using an electrodeless technique for MOSFETs fabricated in an ultrathin silicon-on-insulator (UTSOI) substrate. A layer of metal (CoWP or CoB) is formed on the source and drain nickel and cobal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9d6991056a8e0432fa7de3457a8af9c
https://doi.org/10.1109/led.2007.900865
https://doi.org/10.1109/led.2007.900865
Autor:
M. J. Iacoponi
Publikováno v:
Journal of VLSI Signal Processing. 2:89-101
The Advanced Architecture On-board Processor (AAOP) is a fault-tolerant signal processor developed for advanced space and avionics missions. A ten processor element breadboard, funded by Rome Air Development Center, has been constructed to prove the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07e6267cfa9eac71d0d90c8b98add10c
https://doi.org/10.1007/bf00934999
https://doi.org/10.1007/bf00934999
Autor:
J. Iacoponi, Ming-Ren Lin, C.-Y. Sung, J. Pellerin, Meikei Ieong, I. Shao, D. Singh, A. Topol, Zhibin Ren, James N. Pan
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
This paper reports a novel, non-epitaxial raised source/drain approach to decrease the parasitic series resistance in nMOSFETs fabricated on UTSOI using a selective electroless metal deposition process. A metallic layer selectively deposited in the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e3085beabddbac316d1ea3bade48a9e
https://doi.org/10.1109/vlsit.2006.1705278
https://doi.org/10.1109/vlsit.2006.1705278
Autor:
C. Wang, J. Pellerin, A. Singhal, M. Aminpur, R. Chowdhury, Russell L. Carter, C. Prindle, T. Ryan, Kurt H. Junker, J. Iacoponi, Da Zhang, B. Melnick, L. Svedberg, N. Grove, E.J. Weitzman, M.-F. Ng, B. Brennan, J. Linville, T. Lii, Charles Fredrick King, Cindy Kay Goldberg, V. Wang, Jeremy L. Martin, P. Ventzek, J. Mueller, M. Kiene, J. Werking, M. Woo, S. Usmani, A. Guvenilir, Kirk J. Strozewski, Yuri E. Solomentsev, Kathleen C. Yu, Tab A. Stephens, Dean J. Denning, Stanley M. Filipiak, F. Huang, Janos Farkas, David Smith, Narayanan C. Ramani, P. Crabtree, T. Sparks, B. Wilson, John C. Flake, I. Shahvandi, Kevin E. Cooper, S. Kim, M. Olivares, B. Eggenstein
Publikováno v:
Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).
The integration challenges of a low-k dielectric (k < 3) to form multi-level Cu interconnects for the next generation 0.1 /spl mu/m CMOS technology are presented. Process improvements to overcome these challenges are highlighted which include etchfro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b62c9efc1f66fc1edd1c412d7acdaf8
https://doi.org/10.1109/iitc.2002.1014870
https://doi.org/10.1109/iitc.2002.1014870
Autor:
Michael J. Iacoponi
Publikováno v:
9th Computing in Aerospace Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e36771512565b37b01945ce7b8a44c71
https://doi.org/10.2514/6.1993-4469
https://doi.org/10.2514/6.1993-4469
Publikováno v:
MRS Proceedings. 242
Spectroscopie ellipsometry is a well developed technique for studying the semiconductor materials and heterostructures. Here, we have applied this technique to in-situ studies of ZnSe and ZnCdSe growth in a low pressure organometallic vapor phase epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0c24b0740fe31b4fd7694ea06434329
https://doi.org/10.1557/proc-242-237
https://doi.org/10.1557/proc-242-237
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