Zobrazeno 1 - 10
of 21
pro vyhledávání: '"J. I. Malin"'
Publikováno v:
Antimonide-Related Strained-Layer Heterostructures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32228baa098bc4b447290bb4203fdcee
https://doi.org/10.1201/9780367810634-6
https://doi.org/10.1201/9780367810634-6
Autor:
D. K. Sengupta, M. B. Weisman, M. Feng, S. L. Chuang, Y. C. Chang, L. Cooper, I. Adesida, I. Bloom, K. C. Hsieh, W. Fang, J. I. Malin, A. P. Curtis, T. Horton, G. E. Stillman, S. D. Gunapala, S. V. Bandara, F. Pool, J. K. Liu, M. McKelvey, E. Luong, W. Hong, J. Mumolo, H. C. Liu, W. I. Wang
Publikováno v:
Journal of Electronic Materials. 27:858-865
We present in this article device characteristics of molecular beam epitaxy grown GaAs/AlGaAs quantum well infrared photodetectors (QWIP) on a semi-insulating GaAs substrate and on a GaAs-on-Si substrate grown by metalorganic chemical vapor depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95503626e00ad9f58a61834a748f8be2
https://doi.org/10.1007/s11664-998-0110-7
https://doi.org/10.1007/s11664-998-0110-7
Autor:
Kwong-Chi Hseih, Vikram Jandhyala, Weich Fang, Yia-Chung Chang, Milton Feng, Sangsig Kim, Sumith V. Bandara, J. I. Malin, Shun Lien Chuang, Eric Michielssen, Sarath D. Gunapala, G. E. Stillman, P.J. Apostolakis, D. K. Sengupta
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 4:746-757
The partial intermixing of the well and barrier materials offers unique opportunities to shift locally the bandgap of quantum-well (QW) structures. We have demonstrated redshifting and broadening of the wavelength responses of bound-to-continuum GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59c12cb1a18767e967eb9e275dc6d26d
https://doi.org/10.1109/2944.720488
https://doi.org/10.1109/2944.720488
Autor:
H. C. Kuo, H. C. Liu, K. C. Hsieh, H. Chen, J. Miller, Lianhe Li, Milton Feng, G. E. Stillman, S. L. Jackson, A. M. Moy, Shun Lien Chuang, T. Horton, W. Wu, J. I. Malin, A. P. Curtis, W. Fang, Ilesanmi Adesida, J. R. Tucker, Yun-Chorng Chang, D. K. Sengupta, Kangguo Cheng
Publikováno v:
Journal of Electronic Materials. 26:1382-1388
High-quality InGaAs/InP quantum wells with ultra-narrow well widths (∼10A) and peak response at 4.55 µm were grown by gas source molecular beam epitaxy. These structures were characterized by cross-sectional tunneling microscopy (XSTM), double-cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e31ff8d5ffc9d49589df87f0a003d1c5
https://doi.org/10.1007/s11664-997-0055-2
https://doi.org/10.1007/s11664-997-0055-2
Autor:
D. K. Sengupta, S. L Jackson, A. P. Curtis, W. Fang, J. I. Malin, T. U. Horton, Q. Hartman, H. C. Kuo, S. Thomas, J. Miller, K. C. Hsieh, I. Adesida, S. L. Chuang, M. Feng, G. E. Stillman, Y. C. Chang, W. Wu, J. Tucker, H. Chen, J. M. Gibson, J. Mazumder, L. Li, H. C. Liu
Publikováno v:
Journal of Electronic Materials. 26:1376-1381
We present experimental results on the growth and characterization of n-type InGaAs/InP quantum-well intersubband photodetectors for use at 8.93 µm. High-quality InGaAs/InP multiple quantum wells were grown by gas source molecular beam expitaxy, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dab704eb054de974ea69246f8b7db05b
https://doi.org/10.1007/s11664-997-0054-3
https://doi.org/10.1007/s11664-997-0054-3
Autor:
Christopher L. Felix, Yucai Zhou, Chih-Hsiang Lin, P.C. Chang, S. J. Murry, J.F. Pinto, Jerry R. Meyer, Craig A. Hoffman, Shin-Shem Pei, J. I. Malin, D. Zhang
Publikováno v:
Journal of Crystal Growth. :955-959
We have employed molecular-beam epitaxy (MBE) for the growth of mid-infrared (MIR) type-II quantum-well laser structures. These lasers consist of strain-balanced InAs/InGasb/InAs/AlSb type-II quantum wells lattice-matched to the AlSb cladding layers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935318a51e07b86644a58ec7ffed334f
https://doi.org/10.1016/s0022-0248(96)00830-5
https://doi.org/10.1016/s0022-0248(96)00830-5
Autor:
Lew Goldberg, James R. Lindle, Chih-Hsiang Lin, P.C. Chang, Christopher L. Felix, J. I. Malin, D. Zhang, S. J. Murry, Rui Q. Yang, Craig A. Hoffman, Shin-Shem Pei, Jerry R. Meyer, E. J. Bartoli
Publikováno v:
Journal of Electronic Materials. 26:440-443
We report optically pumped four-constituent InAs/InGaSb/InAs/AlSb type-II quantum-well lasers emitting at 3.2–4.1 μm. Lasing was observed up to 350K under pulsed operation, with a characteristic temperature T0 up to 68K at temperatures above ambie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10e7087c9cd90e23b87ba0238e3a7e50
https://doi.org/10.1007/s11664-997-0116-6
https://doi.org/10.1007/s11664-997-0116-6
Autor:
D. K. Sengupta, J. I. Malin, W. Fang, Shun Lien Chuang, K. C. Hsieh, Ping Liu, G. E. Stillman, Milton Feng
Publikováno v:
Journal of Applied Physics. 80:4737-4740
Selectively red shifting the photoresponse of intersubband GaAs/Al0.25Ga0.75As multiple‐quantum‐well (MQW) infrared photodetectors (QWIPs) by furnace and rapid thermal annealing is explored. Selective interdiffusion of the MQW is achieved by diel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4d4f432186ea97ce7912518ff05d363
https://doi.org/10.1063/1.363456
https://doi.org/10.1063/1.363456
Autor:
J. I. Malin, Milton Feng, A. P. Curtis, S. L. Chuang, K. M.S.V. Bandara, Sarath D. Gunapala, W. Fang, H. C. Liu, Lianhe Li, K. C. Hsieh, W. I. Wang, G. E. Stillman, Haydn Chen, T. Horton, Jian V. Li, D. K. Sengupta
Publikováno v:
Applied Physics Letters. 71:78-80
In this letter, we describe the characteristics of molecular beam epitaxy GaAs/AlGaAs quantum-well infrared photodetectors (QWIP’s) grown on a GaAs substrate, and on a GaAs-on-Si substrate produced by metalorganic chemical-vapor deposition. Importa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccb9d14fc77402df23ba2519530bc92e
https://doi.org/10.1063/1.119473
https://doi.org/10.1063/1.119473
Autor:
J. I. Malin, Milton Feng, G. E. Stillman, D. K. Sengupta, H. C. Liu, S. L. Jackson, Lianhe Li, H. C. Kuo, S. Thomas, D.A. Ahmari, Yun-Chorng Chang
Publikováno v:
Applied Physics Letters. 69:3209-3211
Lattice-matched InGaAs/InP quantum well intersubband photodetectors (QWIPs) have been grown on an InP substrate by gas source molecular beam epitaxy. Detection at 4.55 μm was observed for a narrow well p-type InGaAs QWIP which, when complimented by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b17db785499c0a36f8c9e68013cceb99
https://doi.org/10.1063/1.117963
https://doi.org/10.1063/1.117963