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Flexible n-i-p thin film silicon solar cells on polyimide foils with textured ZnO:Ga back reflector

Autor: Pedro Alpuim, E. Marins, W. Böttler, S. Michard, J. Hotovy, M. Warzecha, Friedhelm Finger

Publikováno v: Thin solid films 571, 9-12 (2014). doi:10.1016/j.tsf.2014.09.026
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP

In thin film silicon solar cells on opaque substrates in n-i-p deposition sequence where the textured transparent conductive oxide (TCO) layer serves as a back reflector, one can independently optimize the morphology of the TCO layer without compromi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da1489b864bd448e4eceaceab6c7720d
https://doi.org/10.1016/j.tsf.2014.09.026

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Damp heat stable doped zinc oxide films

Autor: Florian Ruske, U. Zastrow, Dieter Greiner, Jürgen Hüpkes, J. Hotovy, Jorj I. Owen, M. Wimmer, Reiner Klenk

Publikováno v: Thin Solid Films. 555:48-52

Zinc oxide is widely used as transparent contact in thin film solar cells. We investigate the damp heat stability of aluminum doped ZnO (ZnO:Al) films sputter deposited at different conditions. Increase in resistivity upon damp heat exposure was obse

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1318e5a4d700deb25789e4751c82cfb2
https://doi.org/10.1016/j.tsf.2013.08.011

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Sputtered ITO for application in thin-film silicon solar cells: Relationship between structural and electrical properties

Autor: Vladimir Smirnov, E. Marins, Jürgen Hüpkes, Lothar Spiess, Ivan Hotovy, W. Böttler, Th. Kups, Jaroslav Kováč, J. Hotovy

Publikováno v: Applied Surface Science. 269:81-87

Indium tin oxide (ITO) thin films for application in thin-film silicon solar cells with superior electrical and optical properties (resistivity ranging from 1.4 to 8.4 × 10 −4 Ω cm; transparency of >80%) have been investigated. ITO layers were de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf2618bb045147ff9b7803b507ec897f
https://doi.org/10.1016/j.apsusc.2012.10.180

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Effects of post-deposition surface treatment on the optical, structural and hydrogen sensing properties of TiO2 thin films

Autor: I. Fasaki, Vlastimil Rehacek, Michael G. Kompitsas, A. Rehakova, J. Hotovy, Ivan Hotovy, F. Roubani-Kalantzopoulou

Publikováno v: Thin Solid Films. 518:1103-1108

TiO 2 thin films were prepared by DC reactive magnetron sputtering in a mixture of oxygen and argon on glass and oxidized silicon substrates. The effect of post-deposition annealing (300 °C, 500 °C and 700 °C for 8 h in air) on the structural and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cc735f7581995e1871c74f9a52d4f707
https://doi.org/10.1016/j.tsf.2009.08.052

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High mobility annealing of Transparent Conductive Oxides

Autor: Jürgen Hüpkes, Jorj I. Owen, M. Wimmer, J. Hotovy, M Warzecha, Florian Ruske

Publikováno v: IOP conference series / Materials science and engineering 34, 012004-(2012). doi:10.1088/1757-899X/34/1/012004
E-MRS 2011 Fall Symposium I: Advances in Transparent Electronics, from Materials to Devices III, EMRS Fall 2011, Warsaw, Poland, 2011-09-19-2011-09-23
London [u.a.] : Institute of Physics, IOP conference series / Materials science and engineering 34, 012004-(2012). doi:10.1088/1757-899X/34/1/012004

To improve electrical properties a high temperature annealing treatment was applied to several transparent conductive oxides (TCO), namely tin doped indium oxide (ITO), Ga- or Al- doped ZnO (ZnO:Al/Ga), ion beam assisted deposited (IBAD) ZnO:Ga and G

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef9b1fade5f6db61bfa9942e60c110b5
https://hdl.handle.net/2128/5900

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Structural and electrical properties of amorphous nitrogen doped SiC thin films annealed by pulsed electron beam

Autor: N.I. Balalykin, Jozef Huran, A.P. Kohzev, J. Hotovy, J. Safrankova

Publikováno v: ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172).

The properties of nitrogen-doped amorphous SiC films irradiated by pulsed electron beams are presented. The I-V characteristics of diodes made of irradiated SiC films grown on silicon substrates were investigated. The results showed that the film con

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1587810dc2641f18d39dd995d8ffbfb6
https://doi.org/10.1109/asdam.1998.730193

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