Zobrazeno 1 - 10
of 16
pro vyhledávání: '"J. H. Zeysing"'
Autor:
Jens Falta, Gerald Falkenberg, Thomas J. Schmidt, Gerhard Materlik, J. H. Zeysing, Robert L. Johnson
Publikováno v:
Applied Surface Science. :256-262
The growth of Ge on Bi-terminated Si(111) √3×√3 has been investigated by scanning tunneling microscopy (STM) and X-ray standing waves (XSW). In the Ge thickness range from 1 to 15 bilayers (BL), the morphology of the Ge film surface undergoes dr
Autor:
H. Oughaddou, J.-M. Gay, B. Aufray, L. Lapena, G. Le Lay, O. Bunk, G. Falkenberg, J. H. Zeysing, R. L. Johnson
Publikováno v:
Physical Review B. 61:5692-5697
The surface atomic structure of the $p(2\sqrt{2}\ifmmode\times\else\texttimes\fi{}4\sqrt{2})R45\ifmmode^\circ\else\textdegree\fi{}$ superstructure obtained at 0.5-monolayer coverage by deposition of germanium on the Ag(001) surface at room temperatur
Autor:
Mourits Nielsen, A. S. Dakkouri, Robert Feidenhans'l, S. Maupai, G.A. Eckstein, J. H. Zeysing, Oliver Bunk, Robert L. Johnson, M. Stratmann, Martin Nielsen
Publikováno v:
Physical Review B. 60:8321-8325
Autor:
Mourits Nielsen, L. Lottermoser, Robert Feidenhans'l, Gerald Falkenberg, Jeff Baker, J. H. Zeysing, Robert L. Johnson, F. Berg-Rasmussen, Oliver Bunk
Publikováno v:
Physical Review B. 59:12228-12231
A detailed structural model for the indium-induced $\mathrm{Si}(111)\ensuremath{-}(4\ifmmode\times\else\texttimes\fi{}1)$ surface reconstruction has been determined by analyzing an extensive set of x-ray-diffraction data recorded with monochromatic $
Autor:
R. Feidenhans'l, Gerald Falkenberg, L. Lottermoser, Oliver Bunk, Robert L. Johnson, F. Berg-Rasmussen, M. Nielsen, J. H. Zeysing
Publikováno v:
Applied Surface Science. 142:88-93
A detailed structural model of the indium-induced Ge(103)-(1×1) surface reconstruction has been established by analyzing an extensive set of X-ray data recorded with synchrotron radiation. Our results show that models with one indium and one germani
Autor:
M. Nielsen, R. Feidenhans'l, Robert L. Johnson, E. Landemark, J. H. Zeysing, Oliver Bunk, L. Seehofer, Gerald Falkenberg
Publikováno v:
Applied Surface Science. :104-110
The indium-induced Si(001)-(4 × 3) reconstruction has been investigated by surface X-ray diffraction (SXRD) measurements with synchrotron radiation and scanning tunneling microscopy (STM). The Patterson function analysis enables us to exclude In dim
Autor:
P. Perfetti, Antonio Cricenti, L. Seehofer, G. Le Lay, J. H. Zeysing, Robert L. Johnson, Gerald Falkenberg
Publikováno v:
Scopus-Elsevier
Scanning tunneling microscopy (STM) has been used to study the $\mathrm{S}\mathrm{b}/\mathrm{S}\mathrm{i}(110) 2\ifmmode\times\else\texttimes\fi{}3$ surface at room temperature. The STM filled-state image shows the presence of four protrusions per un
Autor:
Gerald Falkenberg, J. H. Zeysing, Robert L. Johnson, Jens Falta, Gerhard Materlik, Thomas J. Schmidt
Publikováno v:
Applied physics letters 74, 1391 (1999). doi:10.1063/1.123560
Scopus-Elsevier
Scopus-Elsevier
We have investigated the growth of Ge on Bi-terminated Bi:Si(111)-∛×∛. In-situ measurements of x-ray standing waves, crystal truncation rods and scanning tunneling microscopy clearly show that, at substrate temperatures around 485 °C, smooth an
Autor:
Christian Kumpf, Mourits Nielsen, Robert Feidenhans'l, Jörg Zegenhagen, Donald E Ellis, Robert L. Johnson, Yixi Su, J. H. Zeysing, Laurence D. Marks, Detlef-M. Smilgies, Oliver Bunk, E. Landemark
Publikováno v:
Physical review letters 86(16), 3586-3589 (2001). doi:10.1103/PhysRevLett.86.3586
Physical review letters 86(16), 3586 - 3589 (2001). doi:10.1103/PhysRevLett.86.3586
Published by APS, College Park, Md.
Published by APS, College Park, Md.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2139175ae3ddc5a23596c3a8a0abcac
https://bib-pubdb1.desy.de/record/321779
https://bib-pubdb1.desy.de/record/321779
Autor:
Christian Kumpf, Laurence D. Marks, Bjørn-Ove Fimland, Detlef-M. Smilgies, Oliver Bunk, Robert L. Johnson, J. H. Zeysing, Yixi Su, L. X. Cao, Mourits Nielsen, E. Landemark, Robert Feidenhans'l, Donald E Ellis, Jörg Zegenhagen
Publikováno v:
Scopus-Elsevier
Physical review / B 64(7), 075307 (2001). doi:10.1103/PhysRevB.64.075307
Physical review / B 64(7), 075307 (2001). doi:10.1103/PhysRevB.64.075307
Physical review / B 64(7), 075307 (2001). doi:10.1103/PhysRevB.64.075307
Published by Inst., Woodbury, NY
Published by Inst., Woodbury, NY
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2df29977bdff42c8715351cb8b6d1535