Zobrazeno 1 - 3
of 3
pro vyhledávání: '"J. H. Swoger"'
Publikováno v:
IEE Proceedings - Optoelectronics. 146:159-164
An analysis of split-electrode semiconductor lasers is described that is able to model the effects of injecting light from an external source into the laser facets. The equations describe the temporal evolution of the carrier and photon distributions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b905c9d86b794baf76c12850bb3967c
https://doi.org/10.1049/ip-opt:19990577
https://doi.org/10.1049/ip-opt:19990577
Publikováno v:
Canadian Journal of Physics. 70:963-968
On discute trois facteurs qui affectent la transconductance des transistors a effet de champ a heterojonction avec inversion de canal. Dans chaque cas, on formule une hypothese concernant l'effet sur la population de trous dans le canal et de la sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4be850676f3ae113ae08be995336dc66
https://doi.org/10.1139/p92-154
https://doi.org/10.1139/p92-154
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:979
A heterostructure, based on InP/InGaAsP alloys grown by gas source molecular‐beam epitaxy, is presented which can be used to implement the inversion‐channel family of devices. The double‐heterostructure optoelectronic switch (DOES) is demonstra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32d5bd09b28074a4fd74b91d3c1eac21
https://doi.org/10.1116/1.586904
https://doi.org/10.1116/1.586904