Zobrazeno 1 - 10
of 11
pro vyhledávání: '"J. H. Souk"'
Autor:
L. S. Pu, D. S. Sakong, K. T. No, B. H. Kim, Kyuha Chung, B. S. Ban, E. K. Lee, Bong-Sung Seo, Y. Joo, S. Seong, Yong Bae Kim, Yong-Kuk Yun, J. H. Souk, S. W. Chung, K. J. Lee, J. K. Park, J. Y. Jeong, K. S. Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 34:705
Liquid crystal molecules with a new fluoro-isothiocyanate moiety were synthesized. They showed remarkably high TNI (>190 °C), wide mesophase range of 170 °C, high dielectric anisotropy (>14) and high optical anisotropy (>0.28). New LC Mixtures of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0def6b3ed361518a65c3b8a9852302c5
https://doi.org/10.1889/1.1832373
https://doi.org/10.1889/1.1832373
Publikováno v:
SID Symposium Digest of Technical Papers. 33:1281
A 40-inch wide screen format TFT-LCD with a resolution of 1280×768 has been developed for HDTV application. We have overcome the size limitation of 40-inch panel with optimum panel design and succeeded with current fabricating process. In this paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8672f4de69d3ffbf4513c64a9da4f3bf
https://doi.org/10.1889/1.1830180
https://doi.org/10.1889/1.1830180
Publikováno v:
SID Symposium Digest of Technical Papers. 29:315
The compensation principle to reduce the off-axis light leakage of crossed polarizers is investigated. After optimizing the retardation films, the simulation results show that the black state of viewing angle of compensated TN and VA modes can be mad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47531fe9bef1742e02c4e128c47b181c
https://doi.org/10.1889/1.1833756
https://doi.org/10.1889/1.1833756
Autor:
B. S. Bae, W. K. Lee, J. H. Souk, K. N. Kim, K. H. Yoo, J. H. Lee, J. Jang, J. H. Huh, S. Y. Joo, J. I. Ryu
Publikováno v:
SID Symposium Digest of Technical Papers. 29:305
A new pixel structure is suggested and applied to the 5.8″ diagonal liquid crystal display panel. In general, previous gate lines or the common electrode lines are used as the reference electrodes of the storage capacitor. In the suggested structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8db3350d31a5f85070401bda9bbdf641
https://doi.org/10.1889/1.1833754
https://doi.org/10.1889/1.1833754
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:3106-3110
The resistivity of tungsten films prepared by magnetron sputtering, electron gun evaporation, and chemical vapor deposition was measured in the 4.2–297 K temperature range. The resistivity ρ in all films decreases linearly with temperature down to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09aa181dceaaba24c06c875df9d3c1df
https://doi.org/10.1116/1.573637
https://doi.org/10.1116/1.573637
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 3:2289-2292
In this work, the electrical and structural properties of e-beam deposited tungsten films on sapphire are described. Tungsten thin films (200--400 nm) were evaporated on sapphire substrates at different substrate temperature T/sub s/. Film resistivit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec2e76487e15561846f08beae99fa408
https://doi.org/10.1116/1.572866
https://doi.org/10.1116/1.572866
Publikováno v:
Journal of Applied Physics. 62:509-512
Thin layers of tungsten∼30 and 300 A thick were grown by electron‐beam evaporation on (1102) sapphire substrates in a vacuum better than 10−8 Torr at a substrate temperature of 450 °C. After deposition, the films were characterized by x‐ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9dee0d5643a2255424b99e5cb8e67fb
https://doi.org/10.1063/1.339775
https://doi.org/10.1063/1.339775
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