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Akademický článek

Dressed-state control of effective dipolar interaction between strongly-coupled solid-state spins

Autor: Junghyun Lee, Mamiko Tatsuta, Andrew Xu, Erik Bauch, Mark J. H. Ku, Ronald L. Walsworth

Publikováno v: npj Quantum Information, Vol 9, Iss 1, Pp 1-9 (2023)

Abstract Strong interactions between defect spins in many-body solid-state quantum systems are a crucial resource for exploring non-classical states. However, they face the key challenge of controlling interactions between the defect spins, since the

Externí odkaz: https://doaj.org/article/faa1780cb08c462f852cc7a9828604f6

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Akademický článek

Controllable tunability of a Chern number within the electronic-nuclear spin system in diamond

Autor: Junghyun Lee, Keigo Arai, Huiliang Zhang, Mark J. H. Ku, Ronald L. Walsworth

Publikováno v: npj Quantum Information, Vol 9, Iss 1, Pp 1-8 (2023)

Abstract Chern numbers characterize topological phases in a wide array of physical systems. However, the resilience of system topology to external perturbations makes it challenging experimentally to investigate transitions between different phases.

Externí odkaz: https://doaj.org/article/f6e58cd19240437e952205f98e216210

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Phonon-mediated strong coupling between a three-dimensional topological insulator and a two-dimensional antiferromagnetic material

Autor: D. Quang To, Weipeng Wu, Subhash Bhatt, Yongchen Liu, Anderson Janotti, Joshua M. O. Zide, Mark J. H. Ku, John Q. Xiao, M. Benjamin Jungfleisch, Stephanie Law, Matthew F. Doty

Van der Waals antiferromagnetic and topological insulator materials provide powerful platforms for modern optical, electronic, and spintronic devices applications. The interaction between an antiferromagnet (AFM) and a topological insulator (TI), if

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d97c599dff1c65b41b872af9a993c64e
http://arxiv.org/abs/2212.02656

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Akademický článek

Robustness of quantized transport through edge states of finite length: Imaging current density in Floquet topological versus quantum spin and anomalous Hall insulators

Autor: Utkarsh Bajpai, Mark J. H. Ku, Branislav K. Nikolić

Publikováno v: Physical Review Research, Vol 2, Iss 3, p 033438 (2020)

The theoretical analysis of topological insulators (TIs) has been traditionally focused on infinite homogeneous crystals with band gap in the bulk and nontrivial topology of their wave functions, or infinite wires whose boundaries host surface or edg

Externí odkaz: https://doaj.org/article/d5c97942c6a64774a03d71847fe73675

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Revealing room temperature ferromagnetism in exfoliated Fe5GeTe2 flakes with quantum magnetic imaging

Autor: Hang Chen, Shahidul Asif, Matthew Whalen, Jeyson Támara-Isaza, Brennan Luetke, Yang Wang, Xinhao Wang, Millicent Ayako, Saurabh Lamsal, Andrew F May, Michael A McGuire, Chitraleema Chakraborty, John Q Xiao, Mark J H Ku

Publikováno v: 2D Materials. 9:025017

Van der Waals (vdW) material Fe5GeTe2, with its long-range ferromagnetic ordering near room temperature, has significant potential to become an enabling platform for implementing novel spintronic and quantum devices. To pave the way for applications,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89204e45c6e5875ef3864008f9644f8b
https://doi.org/10.1088/2053-1583/ac57a9

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Imaging viscous flow of the Dirac fluid in graphene

Autor: Mark J H, Ku, Tony X, Zhou, Qing, Li, Young J, Shin, Jing K, Shi, Claire, Burch, Laurel E, Anderson, Andrew T, Pierce, Yonglong, Xie, Assaf, Hamo, Uri, Vool, Huiliang, Zhang, Francesco, Casola, Takashi, Taniguchi, Kenji, Watanabe, Michael M, Fogler, Philip, Kim, Amir, Yacoby, Ronald L, Walsworth

Publikováno v: Nature. 583(7817)

The electron-hole plasma in charge-neutral graphene is predicted to realize a quantum critical system in which electrical transport features a universal hydrodynamic description, even at room temperature

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::96157fbd22aa6329b1ad1849e3bae254
https://pubmed.ncbi.nlm.nih.gov/32699401

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Si FinFET based 10nm technology with multi Vt gate stack for low power and high performance applications

Publikováno v: 2016 IEEE Symposium on VLSI Technology.

10nm logic technology using Si FinFET is developed for low power and high performance applications. Power-speed gain of 27% compared to 14nm technology node was obtained using four key developments: 1) advanced gate stack engineering enabling 4 multi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d8be10c587190525d0b9456ac1b7f5ca
https://doi.org/10.1109/vlsit.2016.7573359

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