Výsledky vyhledávání

Thermal expansion of the new perovskite substrates DyScO3 and GdScO3

Autor: J. H. Haeni, Michael D. Biegalski, Susan Trolier-McKinstry, Darrell G. Schlom, C. D. Brandle, A. J. Ven Graitis

Publikováno v: Journal of Materials Research. 20:952-958

The thermal expansion coefficients of DyScO3 and GdScO3 were determined from298 to 1273 K using x-ray diffraction. The average thermal expansion coefficients of DyScO3 and GdScO3 were 8.4 and 10.9 ppm/K, respectively. No phase transitions were detect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ee8bbba9e5f3ce9b836c7cb49e327196
https://doi.org/10.1557/jmr.2005.0126

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Room-temperature ferroelectricity in strained SrTiO3

Autor: Darrell G. Schlom, Long Qing Chen, B. Craigo, Wontae Chang, Wei Tian, Stephen K. Streiffer, Y. L. Li, Marilyn E. Hawley, Xiaoqing Pan, Steven W. Kirchoefer, Jeremy Levy, J. H. Haeni, Reinhard Uecker, Alexander K. Tagantsev, Patrick Irvin, P. Reiche, Somnath Choudhury

Publikováno v: Nature. 430:758-761

Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (T(c)) is traditionally accomplished by chemical substitution-as in Ba(x)Sr(1-x)TiO

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7cbb5ecefc8f893d15320e981d60ed0a
https://doi.org/10.1038/nature02773

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Critical issues in the heteroepitaxial growth of alkaline-earth oxides on silicon

Autor: J. Lettieri, Darrell G. Schlom, J. H. Haeni

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:1332-1340

The critical aspects of the epitaxial growth of alkaline-earth oxides on silicon are described in detail. The step by step transition from the silicon to the alkaline-earth oxide as shown through reflection high energy electron diffraction is present

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::64da49177852a3289108fde706e3e1d6
https://doi.org/10.1116/1.1482710

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A Thermodynamic Approach to Selecting Alternative Gate Dielectrics

Autor: J. H. Haeni, Darrell G. Schlom

Publikováno v: MRS Bulletin. 27:198-204

As a first step in the identification of suitable alternative gate dielectrics for metal oxide semiconductor field-effect transistors (MOSFETs), we have used tabulated thermodynamic data to comprehensively assess the thermodynamic stability of binary

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b8aa3692e2f69453e71304bb32e0cca
https://doi.org/10.1557/mrs2002.71

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Oxide nano-engineering using MBE

Autor: Darrell G. Schlom, Xiaoqing Pan, J. H. Haeni, J. Lettieri, Jiechao Jiang, Wei Tian, C. D. Theis

Publikováno v: Materials Science and Engineering: B. 87:282-291

Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the nanometer level; its use for the integration of oxides with similar nanoscale customization appears promising. This paper describes the use of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a6b14910639f70ef4f01ea5960e5c56f
https://doi.org/10.1016/s0921-5107(01)00726-7

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Transmission electron microscopy study of n= 1–5 Srn+1TinO3n+1 epitaxial thin films

Autor: Xiaoqing Pan, Wei Tian, D. G. Schlom, J. H. Haeni

Publikováno v: Journal of Materials Research. 16:2013-2026

Epitaxial Srn+1TinO3n+1 thin films with n = 1–5 were synthesized on (001) SrTiO3 substrates by reactive molecular beam epitaxy. The structure and microstructure of the films were investigated by x-ray diffraction, transmission electron microbeam di

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bccd180bf2a102baac4aabde2c8588db
https://doi.org/10.1557/jmr.2001.0276

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[Untitled]

Autor: C. D. Theis, Darrell G. Schlom, J. H. Haeni

Publikováno v: Journal of Electroceramics. 4:385-391

The growth of high quality multicomponent oxide thin films by reactive molecular beam epitaxy (MBE) requires precise composition control. We report the use of in situ reflection high-energy electron diffraction (RHEED) for the stoichiometric depositi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3a18c44317864f9040ba64bc6e2312f0
https://doi.org/10.1023/a:1009947517710

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Probing Nanoscale Ferroelectricity by Ultraviolet Raman Spectroscopy

Publikováno v: Science. 313:1614-1616

We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature ( T c ) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO 3 layers in BaTiO 3 /SrTiO 3 supe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f299715946523d92aae6cc265596474
https://doi.org/10.1126/science.1130306

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Structural evolution of dislocation half-loops in epitaxial BaTiO3 thin films during high-temperature annealing

Autor: X. Q. Pan, Haiping Sun, Darrell G. Schlom, J. H. Haeni

Publikováno v: Applied Physics Letters. 85:1967-1969

BaTiO3 thin films were grown on (001)SrTiO3 by reactive molecular beam epitaxy. Transmission electron microscopy studies showed that there is a high density of dislocation half-loops inside 8- and 12-nm-thick films. By thermal annealing at 1000°C, t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::73bc306a46973ab92b032f008e73646c
https://doi.org/10.1063/1.1789233

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