Zobrazeno 1 - 10
of 1 150
pro vyhledávání: '"J. H. Haeni"'
Autor:
Y. Li, J. H. Haeni, Xiaoqing Pan, Dmitri A. Tenne, P. Reiche, Costel Constantin, Haiping Sun, Wei Tian, Kj J. Choi, Long Qing Chen, D. G. Schlom, V. Vaithyanathan, Randall M. Feenstra, M. Bernhagen, Arsen Soukiassian, Q. X. Jia, X. X. Xi, Reinhard Uecker, C. B. Eom
Publikováno v:
Journal of Materials Research. 23:1417-1432
Commensurate BaTiO3/SrTiO3 superlattices were grown by reactive molecular-beam epitaxy on four different substrates: TiO2-terminated (001) SrTiO3, (101) DyScO3, (101) GdScO3, and (101) SmScO3. With the aid of reflection high-energy electron diffracti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dee381300b57cc06dbd89e541b9a3179
https://doi.org/10.1557/jmr.2008.0181
https://doi.org/10.1557/jmr.2008.0181
Autor:
J. H. Haeni, Michael D. Biegalski, Susan Trolier-McKinstry, Darrell G. Schlom, C. D. Brandle, A. J. Ven Graitis
Publikováno v:
Journal of Materials Research. 20:952-958
The thermal expansion coefficients of DyScO3 and GdScO3 were determined from298 to 1273 K using x-ray diffraction. The average thermal expansion coefficients of DyScO3 and GdScO3 were 8.4 and 10.9 ppm/K, respectively. No phase transitions were detect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee8bbba9e5f3ce9b836c7cb49e327196
https://doi.org/10.1557/jmr.2005.0126
https://doi.org/10.1557/jmr.2005.0126
Autor:
Jeffrey A. Bellotti, Darrell G. Schlom, Syed B. Qadri, Steven W. Kirchoefer, J. H. Haeni, Wontae Chang, Jeffrey M. Pond
Publikováno v:
Journal of Applied Physics. 96:6629-6633
Structural distortion of ferroelectric thin films caused by film strain has a strong impact on the microwave dielectric properties. SrTiO3 thin films epitaxially grown on (110)DyScO3 substrates using molecular beam epitaxy are extremely strained (i.e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1966b1865449bd471b2459dc69331f90
https://doi.org/10.1063/1.1813641
https://doi.org/10.1063/1.1813641
Autor:
Darrell G. Schlom, Long Qing Chen, B. Craigo, Wontae Chang, Wei Tian, Stephen K. Streiffer, Y. L. Li, Marilyn E. Hawley, Xiaoqing Pan, Steven W. Kirchoefer, Jeremy Levy, J. H. Haeni, Reinhard Uecker, Alexander K. Tagantsev, Patrick Irvin, P. Reiche, Somnath Choudhury
Publikováno v:
Nature. 430:758-761
Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (T(c)) is traditionally accomplished by chemical substitution-as in Ba(x)Sr(1-x)TiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7cbb5ecefc8f893d15320e981d60ed0a
https://doi.org/10.1038/nature02773
https://doi.org/10.1038/nature02773
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:1332-1340
The critical aspects of the epitaxial growth of alkaline-earth oxides on silicon are described in detail. The step by step transition from the silicon to the alkaline-earth oxide as shown through reflection high energy electron diffraction is present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64da49177852a3289108fde706e3e1d6
https://doi.org/10.1116/1.1482710
https://doi.org/10.1116/1.1482710
Autor:
J. H. Haeni, Darrell G. Schlom
Publikováno v:
MRS Bulletin. 27:198-204
As a first step in the identification of suitable alternative gate dielectrics for metal oxide semiconductor field-effect transistors (MOSFETs), we have used tabulated thermodynamic data to comprehensively assess the thermodynamic stability of binary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b8aa3692e2f69453e71304bb32e0cca
https://doi.org/10.1557/mrs2002.71
https://doi.org/10.1557/mrs2002.71
Autor:
Darrell G. Schlom, Xiaoqing Pan, J. H. Haeni, J. Lettieri, Jiechao Jiang, Wei Tian, C. D. Theis
Publikováno v:
Materials Science and Engineering: B. 87:282-291
Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the nanometer level; its use for the integration of oxides with similar nanoscale customization appears promising. This paper describes the use of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6b14910639f70ef4f01ea5960e5c56f
https://doi.org/10.1016/s0921-5107(01)00726-7
https://doi.org/10.1016/s0921-5107(01)00726-7
Publikováno v:
Journal of Materials Research. 16:2013-2026
Epitaxial Srn+1TinO3n+1 thin films with n = 1–5 were synthesized on (001) SrTiO3 substrates by reactive molecular beam epitaxy. The structure and microstructure of the films were investigated by x-ray diffraction, transmission electron microbeam di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bccd180bf2a102baac4aabde2c8588db
https://doi.org/10.1557/jmr.2001.0276
https://doi.org/10.1557/jmr.2001.0276
Publikováno v:
Journal of Electroceramics. 4:385-391
The growth of high quality multicomponent oxide thin films by reactive molecular beam epitaxy (MBE) requires precise composition control. We report the use of in situ reflection high-energy electron diffraction (RHEED) for the stoichiometric depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a18c44317864f9040ba64bc6e2312f0
https://doi.org/10.1023/a:1009947517710
https://doi.org/10.1023/a:1009947517710
Autor:
Andrés Cantarero, Serge Nakhmanson, Quanxi Jia, Kyoung Jin Choi, Wei Tian, Karin M. Rabe, Xiaoqing Pan, Xiaoxing Xi, Axel Bruchhausen, Arsen Soukiassian, J. H. Haeni, Alejandro Fainstein, D. A. Tenne, Darrell G. Schlom, Long Qing Chen, Norberto D. Lanzillotti-Kimura, Chang-Beom Eom, Haiping Sun, V. Vaithyanathan, Ram S. Katiyar, D. M. Kim, Yulan Li
Publikováno v:
Science. 313:1614-1616
We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature ( T c ) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO 3 layers in BaTiO 3 /SrTiO 3 supe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f299715946523d92aae6cc265596474
https://doi.org/10.1126/science.1130306
https://doi.org/10.1126/science.1130306