Výsledky vyhledávání - "J. H. Forster"

Multi‐purpose trips and central place theory

Publikováno v: Australian Geographer. 16:120-127

Summary Central place models assume that consumers only purchase one good of a given order during a single shopping trip. This assumption is relaxed in this paper to allow the purchase of several orders of goods on any given trip. The implications of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c4fd5630db1f4501945a1249be1a2099
https://doi.org/10.1080/00049188408702863

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1A Processor: Technology and Physical Design

Autor: J. O. Becker, R. K. Eisenhart, A. W. Fulton, J. G. Chevalier, W. L. Harrod, J. H. Forster

Publikováno v: Bell System Technical Journal. 56:207-236

The physical design of large electronic switching systems (esss) requires a comprehensive set of technologies and design tools. The technology used for the 1A Processor and several esss consists of silicon integrated circuits, thin-film hybrid circui

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6cd6b48a077c535e75266e11e8f98845
https://doi.org/10.1002/j.1538-7305.1977.tb00182.x

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Isomeric yield ratios of 133Xe in fission of 232Th, 233U, 235U, and 238U with protons of energies 20–85 MeV

Autor: J. H. Forster., L. Yaffe

Publikováno v: Canadian Journal of Chemistry. 46:1763-1772

The ratio of 133Xe isomers produced in the fission of 232Th, 233U, 235U, and 238U by protons ranging in energy from 20–85 MeV was measured. The Hafner, Huizenga, and Vandenbosch formalism was applied with different sets of input parameters to estab

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dbea43fe440ac345cacf93d8af391f14
https://doi.org/10.1139/v68-292

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Electrical Properties of Gold-Doped Diffused Silicon Computer Diodes

Autor: J. H. Forster, A. E. Bakanowski

Publikováno v: Bell System Technical Journal. 39:87-104

Planar diffused silicon junctions with storage times of one millimicrosecond or less are readily obtained by gold doping. The introduction of uniform gold concentrations (in the range from 1.2 × 1015 cm−3 to 8 × 1016 cm−3) is conveniently done

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ba7b722a9a11104825483fc2b5dd425f
https://doi.org/10.1002/j.1538-7305.1960.tb03923.x

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Effect of Variations in Surface Potential on Junction Characteristics

Autor: H. S. Veloric, J. H. Forster

Publikováno v: Journal of Applied Physics. 30:906-914

A filamentary structure has been used to compare the electrical properties of a germanium surface with those of an adjacent p‐n junction intersecting the same surface. Surface charge is varied by field effect plates in the isolated portion of the f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7d2b971bf2d659a9aebdd1df1b07faa5
https://doi.org/10.1063/1.1735261

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The Effect of Surface Treatments on Point-Contact Transistor Characteristics

Autor: J. H. Forster, L. E. Miller

Publikováno v: Bell System Technical Journal. 35:767-811

A description is given of the electrical properties of formed point contacts on germanium. A useful technique for observation of the equipotentials surrounding such contacts is described. The contrasting properties of donor-free and donor-doped conta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6cb5ef96ee7331d7ea28bce9352b1368
https://doi.org/10.1002/j.1538-7305.1956.tb03803.x

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