Zobrazeno 1 - 10
of 21
pro vyhledávání: '"J. H. Basson"'
Autor:
J. H. Basson, H. Booyens
Publikováno v:
Physica Status Solidi (a). 85:449-454
The requirements for minimizing the introduction of misfit dislocations into epitaxial layers of Hgo.8Cdo.2Te on ZnzCd1−zTe and CdSeyTe1−y substrates are considered. On the basis of previously published results on the yield stress of Hgo.8Cdo.2Te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b61391a3e884aa93999b63060fb921c5
https://doi.org/10.1002/pssa.2210850216
https://doi.org/10.1002/pssa.2210850216
Autor:
H. Booyens, J. H. Basson
Publikováno v:
Physica Status Solidi (a). 64:777-786
The effects of substrate relaxation and curvature on the stress levels and the introduction of misfit dislocations in epitaxial layers are considered. The stress distribution in single- and multi-layer epitaxial structures are calculated, employing e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::750774c566ccc24445a311eb1e45c4da
https://doi.org/10.1002/pssa.2210640245
https://doi.org/10.1002/pssa.2210640245
Publikováno v:
Journal of Applied Physics. 50:4003-4008
The effect of thermal expansion on the temperature distributions around dislocations in III‐V crystals during conduction parallel to their lines is considered. It is found that the thermal expansion has little effect on the temperature distribution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bd0027ed0e41ef742089b48fb7bbe4d
https://doi.org/10.1063/1.326479
https://doi.org/10.1063/1.326479
Autor:
J. H. Basson, Masanori Murakami
Publikováno v:
Journal of Applied Physics. 53:346-352
Changes in the microstructure of e‐phase Pb‐Bi films with various thicknesses that were deposited onto oxidized Si substrates and then repeatedly thermally cycled between 298 and 4.2 K were studied using x‐ray diffraction, transmission, and sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3650226a0b8b1de3b6a0f44c77e2baf4
https://doi.org/10.1063/1.329893
https://doi.org/10.1063/1.329893
Autor:
H. Booyens, J. H. Basson
Publikováno v:
Journal of Applied Physics. 51:4368-4374
The basic relations between the strain fields in III–V crystals and their elastobirefringence transmission properties are derived. The results are applied in an analysis of the contrast phenomena observed in III–V crystals containing misfitting e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72acb36e2d55968cd3b3586ae8e27045
https://doi.org/10.1063/1.328299
https://doi.org/10.1063/1.328299
Autor:
H. Booyens, J. H. Basson
Publikováno v:
Physica Status Solidi (a). 80:663-668
The variation of misfit with composition and temperature in the HgCdTe/CdTe bicrystal system and its effect on the introduction of misfit dislocations are investigated. It is shown that the critical thickness for the introduction of misfit dislocatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2754ca31a7bcd741118728348c4b0688
https://doi.org/10.1002/pssa.2210800231
https://doi.org/10.1002/pssa.2210800231
Publikováno v:
Surface Science. 130:259-268
Evidence is presented for the involvement of surface oxidation phenomena in the photoluminescence response obtained on GaAs(110) surfaces. By using high intensity HeNe laser illumination on freshly cleaved (110) n-type GaAs surfaces, room temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44fe11f34f665b3bea029ef4360e3359
https://doi.org/10.1016/0039-6028(83)90360-6
https://doi.org/10.1016/0039-6028(83)90360-6
Publikováno v:
Physica Status Solidi (a). 54:407-412
Misfit dislocation generation by means of the nucleation of dislocation half-loops is considered. The theory developed for semicircular dislocation loops is extended to half-loops lying in the Peierls troughs of the crystal. Contour plots of dislocat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d19a9dc421433c48c13026789350e51
https://doi.org/10.1002/pssa.2210540151
https://doi.org/10.1002/pssa.2210540151
Autor:
J. H. Basson, C. A. B. Ball
Publikováno v:
Physica Status Solidi (a). 52:609-614
The energy expression for a general threading dislocation in a single-layer heteroepitaxial structure which bows out under the influence of the coherency strain is derived. It is found that, whereas some threading dislocations begin to bow out only o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da5eefe85d4a3f45cc6d2382c0cd2422
https://doi.org/10.1002/pssa.2210520230
https://doi.org/10.1002/pssa.2210520230
Publikováno v:
Journal of Applied Physics. 54:5779-5784
Piezobirefringence is employed in a study of the strain fields associated with SiO stripes evaporated onto GaAs and GaP substrates. The stress fields in the substrates due to semi‐infinite SiO stripes are calculated and compared with the stress dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac34fc3f17d11626f241442b8bf16591
https://doi.org/10.1063/1.331803
https://doi.org/10.1063/1.331803