Zobrazeno 1 - 10
of 26
pro vyhledávání: '"J. Gstöttner"'
Autor:
Zhen Wang, Jacopo Enotarpi, Giada Buffi, Alfredo Pezzicoli, Christoph J. Gstöttner, Simone Nicolardi, Evita Balducci, Monica Fabbrini, Maria Rosaria Romano, Gijsbert A. van der Marel, Linda del Bino, Roberto Adamo, Jeroen D. C. Codée
Publikováno v:
JACS Au, 2(7), 1724-1735
JACS AU, 2(7), 1724-1735. AMER CHEMICAL SOC
JACS AU, 2(7), 1724-1735. AMER CHEMICAL SOC
Group B Streptococcus (GBS) is a Gram-positive bacterium and the most common cause of neonatal blood and brain infections. At least 10 different serotypes exist, that are characterized by their different capsular polysaccharides. The Group B carbohyd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c42ec9dd61f1224aa819ce1ad35bb2c9
https://doi.org/10.1021/jacsau.2c00302
https://doi.org/10.1021/jacsau.2c00302
Autor:
Walter Hansch, M. Balden, Doris Schmitt-Landsiedel, J. Gstöttner, Ch. Linsmeier, A. Wiltner, L. Gao, R. Emling
Publikováno v:
Microelectronic Engineering. 76:76-81
The process development and characterization of titanium nitride (TiN) as a diffusion barrier for silver (Ag) metallizations were discussed. The structure of Ag/TiN/SiO"2/Si and Ag/TiN/Si metallizations under N"2/H"2 thermal annealing at 300-650 ^oC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92c36718f70cacd3bc14fd991347ddb8
https://doi.org/10.1016/j.mee.2004.07.020
https://doi.org/10.1016/j.mee.2004.07.020
Publikováno v:
Materials Science in Semiconductor Processing. 7:331-335
Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a14c2f5da681695bd5c4d8c6ab29d1cf
https://doi.org/10.1016/j.mssp.2004.09.128
https://doi.org/10.1016/j.mssp.2004.09.128
Publikováno v:
Solid-State Electronics. 47:1227-1231
Electromigration is investigated for sputtered Ag lines patterned by a novel hybrid etching technique. This new patterning technique works in two steps. After employing an oxygen plasma in the first step, a hydrogen peroxide solution is used in the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e497be460f66066d2152b567bc5ac481
https://doi.org/10.1016/s0038-1101(03)00036-4
https://doi.org/10.1016/s0038-1101(03)00036-4
Publikováno v:
Microelectronic Engineering. 64:73-79
Sub micron silver lines are patterned by applying chemical mechanical polishing (CMP), Dry etched SiO2 trenches are filled with Ag by sputtering before removing surplus Ag by several CMP methods. Techniques using a slurry which focus on mechanical po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d60b531ff5acd7ecc7b4961abfc55d3a
https://doi.org/10.1016/s0167-9317(02)00772-4
https://doi.org/10.1016/s0167-9317(02)00772-4
Publikováno v:
Sensors and Actuators A: Physical. 99:137-143
Diffusion and electromigration behavior was investigated for sputtered Ag lines passivated or encapsulated with different PVD deposited barrier layers of Al-oxide, Si-nitride and Ti. It was found that lateral diffusion can decrease the electromigrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ebbc772f091a7abc497abb043912b07
https://doi.org/10.1016/s0924-4247(01)00912-8
https://doi.org/10.1016/s0924-4247(01)00912-8
Publikováno v:
Microelectronic Engineering. 60:51-57
Electromigration was investigated for sputtered Ag lines patterned by wet etching or by a novel hybrid etching technique. This new patterning technique works in two steps. After employing an oxygen plasma in the first step, a hydrogen peroxide soluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10a5a21ae4c8283d4318b33ced21ecf9
https://doi.org/10.1016/s0167-9317(01)00580-9
https://doi.org/10.1016/s0167-9317(01)00580-9
Autor:
Wojciech Maly, M. Huber, M. Heinitz, J. Gstöttner, D. Schmitt-Landsiedel, Th. Zanon, Th. Nirschl
Publikováno v:
Microelectronics Reliability. 40:1635-1640
New kinds of faults in digital ICs caused by particles with a certain resistance value are presented. By using an enhanced version of a three dimensional contamination-defect-fault simulator the faulty circuit behaviour caused by these defects and ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfc09d06897871f9367086268ec7cebb
https://doi.org/10.1016/s0026-2714(00)00183-9
https://doi.org/10.1016/s0026-2714(00)00183-9
Publikováno v:
Applied Physics Letters. 78:838-840
Resistivity and electromigration were investigated for thin sputtered Ag films and microstructured Ag lines. Resistivities of thin films were found to be lower compared to copper and follow the prediction of the size effect. Microstructured Ag lines
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcb786a76644bc602b523162cfd97850
https://doi.org/10.1063/1.1345801
https://doi.org/10.1063/1.1345801
Autor:
H. W. P. Koops, J. Gstöttner, S. W. Schulz, O. Röder, Andrzej G. Chmielewski, G. Mattausch, U. Gohs, A. Reichmann, H. Bluhm, B. Han, O. Zywitzki, H. Morgner, D. von Dobeneck, B. Wenzel
Publikováno v:
Vacuum Electronics ISBN: 9783540719281
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b989552632e659ceaf45b9a43c0e672
https://doi.org/10.1007/978-3-540-71929-8_4
https://doi.org/10.1007/978-3-540-71929-8_4
