Zobrazeno 1 - 10
of 250
pro vyhledávání: '"J. Gronkowski"'
Publikováno v:
Wasik, D.; Baj, M.; Siwiec-Matuszyk, J.; Gronkowski, J.; Jasinski, J.; & Karczewski, G.(2001). Effect of hydrostatic pressure on degradation of CdTe/CdMgTe heterostructures grown by molecular beam epitaxy on GaAs substrates. Lawrence Berkeley National Laboratory. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/0qs9v05q
We have shown that external hydrostatic pressure leads to the creation of structural defects, mainly in the vicinity of the II-VI/GaAs interface in the CdTe/Cd{sub 1-x}Mg{sub x}Te heterostructures grown by the molecular beam epitaxy method on GaAs su
Publikováno v:
Radiation Physics and Chemistry. 78:S58-S63
The defect structure of gadolinium–calcium oxoborate single crystals highly doped with 22% Y, Gd0.78Y0.22Ca4O(BO3)3, is studied using X-ray transmission topography both with the conventional source and synchrotron radiation. Straight dislocation di
Publikováno v:
Acta Physica Polonica A. 114:391-398
Laser diodes, solar cells, photodetector structures and other optoelectronic applications of InGaAs ternary bulk crystals and layers stimulate constant interest in the improvement of growth methods for this material. Growth of bulk ternary crystals b
Publikováno v:
Journal of Sol-Gel Science and Technology. 44:249-254
Organogels, formed of polar and apolar glucose-based gelators with organic solvents, were studied using USAXS. The polarity was introduced by attaching the NO2 group to the gelator molecule. The USAXS data were processed using fractal analysis, pair
Publikováno v:
physica status solidi (a). 204:2578-2584
We report results of X-ray investigations of tellurium-doped GaAs 1-x P x (with 0.07 ≤ x ≤ 0.20) single crystals, conducted in order to support finding proper growth parameters which would yield a material of sufficient homogeneity of the lattice
Publikováno v:
physica status solidi (a). 203:3633-3639
Strains and defects due to deposition of layered GaN/AlGaN heteroepitaxial structures generated both in α-sapphire substrates and the layers were studied by X-ray high-resolution diffraction and diffuse scattering. Dislocation loops in α-sapphire w
Autor:
H. Grigoriew, J. Gronkowski
Publikováno v:
Journal of Non-Crystalline Solids. 352:5492-5497
The results of SAXS studies are compared for two groups of samples: (i) obtained by in situ process of gelation of α-galactose-based gel with benzene as solvent, (ii) gels of various concentrations prepared from glucofuranose-based gelator with tolu
Autor:
G. Strzelecka, A. Hruban, Grzegorz Kowalski, Andrzej Twardowski, J. Gosk, J. Gronkowski, Maria Kaminska
Publikováno v:
Acta Physica Polonica A. 110:189-193
Studying bulk GaP, highly doped with Cr, and searching for possible ferromagnetic semiconductor in aim of spintronic applications, we found superconducting behavior of this material unexpectedly. GaP bulk crystals intentionally doped with Cr were gro
Publikováno v:
Journal of Non-Crystalline Solids. 352:3052-3057
Glucofuranose-derivative based gels with various gelator concentration were studied using ultra-small angle X-ray scattering (USAXS) in the scattering vector range 0.0028–0.25 nm−1. A complex method of data processing was applied to extract the s
Publikováno v:
Journal of Alloys and Compounds. 401:212-216
Mathematica was employed to simulate X-ray rocking curves measured in many-crystal arrangements taking into account the divergence and the spectral distribution of the incident beam. The influence of the curvature of the sample on its intrinsic diffr