Zobrazeno 1 - 10
of 62
pro vyhledávání: '"J. Grillenberger"'
Publikováno v:
Physical Review B. 62:12888-12895
Band-gap states of tungsten in silicon carbide (polytypes $4H,$ $6H,$ and $15R)$ are investigated by deep-level transient spectroscopy (DLTS) and admittance spectroscopy on n-type SiC. Doping with W is done by ion implantation and annealing. To estab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c840c2b3f14e64c46a94f96c04bb157
https://doi.org/10.1103/physrevb.62.12888
https://doi.org/10.1103/physrevb.62.12888
Publikováno v:
Hyperfine Interactions. :69-79
Basic electronic properties of semiconductors are determined by defects and impurities. Extremely small relative concentrations may have an effect, if the impurity in question gives rise to a localized electron state having an energy within the band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3bf27eb3e8372de79571fb26eb6cc5e
https://doi.org/10.1023/a:1017021927967
https://doi.org/10.1023/a:1017021927967
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :756-762
Bandgap states of the transition metals Ti, V, and Cr were identified in n-type 4H- and 6H-SiC by radio-tracer Deep Level Transient Spectroscopy (DLTS). The radioactive impurities 48V (decay to 48Ti, T 1 2 = 16.0 d ) and 51Cr (decay to 51V, T 1 2 = 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5466db232dec7060c098d1b64798632d
https://doi.org/10.1016/s0168-583x(97)00767-2
https://doi.org/10.1016/s0168-583x(97)00767-2
Publikováno v:
Journal of Crystal Growth. :1160-1164
The reaction Ag Cd → Ag i + V Cd was used to create cadmium vacancies V Cd in the space charge region of a Schottky contact on p-type CdTe. At T = 380 K, the Ag i + ions were drifted out of the space charge region by the high electric field under r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::017a01b12ec30d19bd0a0aaa620c28e1
https://doi.org/10.1016/s0022-0248(98)80243-1
https://doi.org/10.1016/s0022-0248(98)80243-1
Autor:
U. Reislöhner, M. Kaltenhäuser, Wolfgang Witthuhn, M. Rüb, N. Achtziger, D. Forkel-Wirth, K. Freitag, M. Uhrmacher, J. Grillenberger, T. Licht
Publikováno v:
Diamond and Related Materials. 6:1436-1439
The annealing behaviour of hafnium impurities in silicon carbide after ion implantation and the formation and stability of complexes of hafnium in 4H-SiC were studied by perturbed angular correlation spectroscopy (PAC) for the first time. Samples of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b970004f0bf0195ab5c2562e1c336dd
https://doi.org/10.1016/s0925-9635(97)00071-x
https://doi.org/10.1016/s0925-9635(97)00071-x
Publikováno v:
Applied Physics A: Materials Science & Processing. 65:329-331
Ti, V and Cr in n-type 6H-SiC were investigated by radiotracer deep level transient spectroscopy (DLTS). Doping with the radioactive isotopes 48V and 51Cr was done by recoil implantation followed by annealing (1600 K). Repeated DLTS measurements duri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07a05571a160541941ccbf5ca73fb89e
https://doi.org/10.1007/s003390050587
https://doi.org/10.1007/s003390050587
Autor:
J. Grillenberger, F. Albrecht, Bengt Gunnar Svensson, Ulrike Grossner, R. Sielemann, Wolfgang Witthuhn
Publikováno v:
Physical Review B. 70
Band gap states of platinum and iridium in the hexagonal polytype $4H$ of silicon carbide are investigated by means of deep level transient spectroscopy (DLTS) in $n$- as well as $p$-type epitaxial layers. To establish a definite chemical assignment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49862cfd8ed8bae68d6a1290aa65af50
https://doi.org/10.1103/physrevb.70.205209
https://doi.org/10.1103/physrevb.70.205209
Akademický článek
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Publikováno v:
Journal of Physics: Conference Series; 2017, Vol. 874 Issue 1, p1-1, 1p
Conference
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