Zobrazeno 1 - 10
of 309
pro vyhledávání: '"J. Graffeuil"'
Autor:
B. Guillon, K. Grenier, T. Parra, P. Pons, D. Cros, P. Blondy, J. Graffeuil, J. L. Cazaux, R. Plana
Publikováno v:
Active and Passive Electronic Components, Vol 25, Iss 1, Pp 113-122 (2002)
This paper presents a micromachined technology allowing the realization of very high aspect ratio millimeter-wave circuits. Appropriate 3D electromagnetic simulations based on the finite element method have been implemented to design the circuits. Co
Externí odkaz:
https://doaj.org/article/418ef5b9e24f423a9d55c707bb76dc4b
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (12), pp.5289-5294. ⟨10.1109/TED.2019.2947693⟩
IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5289-5294. ⟨10.1109/TED.2019.2947693⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (12), pp.5289-5294. ⟨10.1109/TED.2019.2947693⟩
IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5289-5294. ⟨10.1109/TED.2019.2947693⟩
International audience; In this article, we report for the first time that the well-established diffusion noise can be apparently increased in large proportions and that such a situation can be very common at some specific frequencies in the p-n junc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b80f30f91978f9f0795a97b0b1803aea
https://hal.archives-ouvertes.fr/hal-02388640/file/TED-ACCEPTED-FINAL_HAL.pdf
https://hal.archives-ouvertes.fr/hal-02388640/file/TED-ACCEPTED-FINAL_HAL.pdf
Publikováno v:
2018 19th IEEE Mediterranean Electrotechnical Conference (MELECON).
III-V wide bandgap disruptive technology is firmly positioned as a leader for high power segments operating at high frequency or under switching mode. Still, it is needed to investigate these transistors to push the maturity towards higher levels and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91906dcc3feb6c90c08a0b41e96033f0
https://doi.org/10.1109/melcon.2018.8379100
https://doi.org/10.1109/melcon.2018.8379100
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 53:3704-3711
The noise behavior of microwave amplifiers operating under a large-signal condition has been studied in this paper. A Gaussian noise is added to a microwave signal and they are applied at the input of several amplifying devices. Experimental data sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fc8fcec804efa0d6ccfa0b3b8d37967
https://doi.org/10.1109/tmtt.2005.856082
https://doi.org/10.1109/tmtt.2005.856082
Publikováno v:
Applied Surface Science. 224:341-346
This paper relates the reliability properties exhibited by SiGe HBT devices. Different type of stress have been applied (DC life test, hot electron stress and radiation experiments). It has been shown that hot electron stress turns out to a surface d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a66bae0f9ec02e7b999e2dcd6aaedcb
https://doi.org/10.1016/j.apsusc.2003.08.075
https://doi.org/10.1016/j.apsusc.2003.08.075
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 52:1606-1610
This paper addresses a new experimental test set designed for on-wafer noise characterization of active two-port amplifiers in the Ka-band. We report on noise parameters obtained from the multiple impedance noise measurement technique on several micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59a2a191e973766206346e094f2f3250
https://doi.org/10.1109/tim.2003.817156
https://doi.org/10.1109/tim.2003.817156
Autor:
D. Vescovi, Roberto Menozzi, Mattia Borgarino, Fausto Fantini, J. Graffeuil, M. Laurens, R. Plana, Laurent Bary, A. Monroy
Publikováno v:
IEEE Transactions on Electron Devices. 49:863-870
The measurement of the correlation between the noise generators is a mandatory issue for the low-frequency noise modeling of bipolar transistors, and it is recognized as a very hard experimental task. In the present work, we introduce the concept of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ed6191953c8fa44df21361d49238b68
https://doi.org/10.1109/16.998596
https://doi.org/10.1109/16.998596
Publikováno v:
Fluctuation and Noise Letters. :L13-L19
The noise behavior of pseudomorphic double-heterojunction high electron mobility transistors dedicated to power applications is investigated in this paper and compared to conventional low noise field effect transistors. The noise is analyzed from an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c73c828a49b7092472569fbf0474da4a
https://doi.org/10.1142/s0219477502000531
https://doi.org/10.1142/s0219477502000531
Autor:
Laurent Bary, H. Lafontaine, J. Graffeuil, Robert Plana, Thierry Parra, S. Kovacic, Mattia Borgarino
Publikováno v:
IEEE Transactions on Electron Devices. 48:767-773
An experimental setup, based on current/voltage conversion through transimpedance amplifiers (TAs), has been implemented for the direct full low-frequency noise (LFN) characterization of Si/SiGe heterojunction bipolar transistors (HBTs) in terms of b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a574e4fc5166d3a2c5a84fef85c24df3
https://doi.org/10.1109/16.915724
https://doi.org/10.1109/16.915724
Publikováno v:
IEEE Electron Device Letters. 31:74-76
Homodyne (zero-IF) operation is very prone to low-frequency noise, partially contributed by the solid-state detector operated in large-signal (quasi-)periodic conditions. Shot noise is the major contributor to this noise if the detector is operated b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b310fd32b0a245c0087d2c034baf2eb7
https://doi.org/10.1109/led.2009.2035339
https://doi.org/10.1109/led.2009.2035339