Zobrazeno 1 - 10
of 89
pro vyhledávání: '"J. Gelpey"'
Autor:
Filadelfo Cristiano, Silke Paul, H. Kheyrandish, Wilfried Lerch, J. Niess, Fabrice Severac, J. Gelpey, Pier-Francesco Fazzini, D. Bolze, A. Martinez-Limia, S. McCoy, Peter Pichler
Publikováno v:
Materials Science and Engineering: B. :3-13
Millisecond annealing as an equipment technology provides temperature profiles which favour dopant activation but nearly eliminate dopant diffusion to form extremely shallow, highly electrically activated junctions. For the 45-nm technology node and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3db24e0bd46a15e27e5cdcc7e725216c
https://doi.org/10.1016/j.mseb.2008.08.017
https://doi.org/10.1016/j.mseb.2008.08.017
Publikováno v:
Materials Science Forum. :257-267
Millisecond annealing (MSA) has been developed over the last several years as a viable approach to achieve the high electrical activation, limited diffusion and high abruptness needed for junctions in the sub-65nm regime. This paper will provide an o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd0235ccfdb44f7f4aa62cda03ea209b
https://doi.org/10.4028/www.scientific.net/msf.573-574.257
https://doi.org/10.4028/www.scientific.net/msf.573-574.257
Autor:
Silke Paul, Wolfgang Windl, L.F. Giles, S. McCoy, Wilfried Lerch, Zsolt Nenyei, Jürgen Niess, J. Gelpey, Alexander Burenkov, Peter Pichler, Jurgen Lorenz
Publikováno v:
Scopus-Elsevier
The continuous scaling of electron devices places strong demands on device design and simulation. The currently prevailing bulk transistors as well as future designs based on thin silicon layers all require a tight control of the dopant distribution.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::befd071310ada720e29b98e8a1f7dd4e
https://doi.org/10.4028/www.scientific.net/ddf.258-260.510
https://doi.org/10.4028/www.scientific.net/ddf.258-260.510
Autor:
T. Selinger, Peter B. Griffin, J. Gelpey, S. H. Jain, D. F. Downey, James D. Plummer, S. McCoy
Publikováno v:
IEEE Transactions on Electron Devices. 52:1610-1615
Junction formation using solid phase epitaxial (SPE) regrowth has been gaining popularity due to its high activation and low thermal budget which results in lower diffusion. Recently, it was shown that by carrying out the SPE regrowth at 1050/spl deg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d61af9c76d4c781fe76ec36f84bb808c
https://doi.org/10.1109/ted.2005.850621
https://doi.org/10.1109/ted.2005.850621
Autor:
James D. Plummer, T. Selinger, J. Gelpey, S. McCoy, Peter B. Griffin, D. F. Downey, S. H. Jain
Publikováno v:
Journal of Applied Physics. 96:7357-7360
There has been considerable interest recently, in the formation of the source drain junctions of metal oxide semiconductor transistors using solid phase epitaxy (SPE) to activate the dopants rather than a traditional high temperature anneal. Previous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3580d7651593bf893bdcca6c670e797b
https://doi.org/10.1063/1.1814792
https://doi.org/10.1063/1.1814792
Publikováno v:
Microelectronic Engineering. 48:55-58
In this paper, we report ultra thin high quality nitride/oxide gate dielectrics prepared by rapid thermal NH 3 nitridation of Si followed by in-situ N 2 O oxidation (NH 3 +H 2 O process). These films show excellent interface properties, significant l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5de11da2edc7bd2047e04fa625ace9d1
https://doi.org/10.1016/s0167-9317(99)00337-8
https://doi.org/10.1016/s0167-9317(99)00337-8
Publikováno v:
Journal of Electronic Materials. 27:1323-1328
A study on the techniques to yield wafer emissivity independent temperature measurements in rapid thermal processing has been presented. This study focuses on the Steag-AST Electronik approach to enhance wafer emissivity by using the Hotliner*. The H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d90c979d6bcdf647dc9894d5a784874c
https://doi.org/10.1007/s11664-998-0091-6
https://doi.org/10.1007/s11664-998-0091-6
Publikováno v:
JOM. 58:32-34
This paper discusses the engineering of ultra-shallow junctions for advanced semiconductors using an annealing technique called Flash-Assist RTPTM (fRTP). This technique offers effective process times in 1–10 ms. A discussion on the evolution of ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02585472bf865456428b03df868cf0b0
https://doi.org/10.1007/s11837-006-0177-7
https://doi.org/10.1007/s11837-006-0177-7
Publikováno v:
ECS Transactions
ECS Transactions, 2012, 45 (6), pp.151-161. ⟨10.1149/1.3700948⟩
ECS Transactions, Electrochemical Society, Inc., 2012, 45 (6), pp.151-161. ⟨10.1149/1.3700948⟩
ECS Transactions, 2012, 45 (6), pp.151-161. ⟨10.1149/1.3700948⟩
ECS Transactions, Electrochemical Society, Inc., 2012, 45 (6), pp.151-161. ⟨10.1149/1.3700948⟩
The required temperature in semiconductor process technology is going in two extreme directions. Either very high temperatures (up to 1300°C) with very short durations on the order of milliseconds are required for highest dopant activation, or extre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e70205d8b09762e60955601cfb96443
https://hal.science/hal-01922632
https://hal.science/hal-01922632
Autor:
Dae-Gyu Park, Paul Ronsheim, Kam Leung Lee, Isaac Lauer, S. McCoy, J. Gelpey, S. Skordas, P. Kulkarni, Yu Zhu, Deborah A. Neumayer, J. Chan
Publikováno v:
2010 International Workshop on Junction Technology Extended Abstracts.
A new combination of long millisecond (1–2.5 ms) flash anneal at high peak temperature(1200–1300°C) and a new absorber with low deposition temperature (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::271f86375c3f6cf7e44f38c9c858a1e1
https://doi.org/10.1109/iwjt.2010.5475001
https://doi.org/10.1109/iwjt.2010.5475001