Zobrazeno 1 - 10
of 37
pro vyhledávání: '"J. G. REYNOLDS"'
Publikováno v:
Animal Genetics. 48:447-449
The bovine rumen papillae are in contact with a wide array of microorganisms and the metabolites they produce, which may activate an inflammatory and/or immune response. Cytokines, chemokines and their receptor genes were tested for differential expr
Autor:
Tim B. Eldred, Salah M. Bedair, Mostafa Abdelhamid, Nadia A. El-Masry, J. G. Reynolds, James M. LeBeau
Publikováno v:
Applied Physics Letters. 116:102104
Device quality InGaN templates are synthesized using the semibulk (SB) approach. The approach maintains the film's 2D growth and avoids the formation of indium-metal inclusions. The strain relaxation processes of the grown InxGa1−xN templates are a
Autor:
G. L. Klunder, N. K. Muetterties, J. G. Reynolds, Peter C. Hsu, M. Gresshoff, Evan M. Kahl, S. A. Strout
Publikováno v:
AIP Conference Proceedings.
Understanding the response of energetic material to thermal insults is very important for the storage, transportation, and handling of energetic materials. One dimensional time to explosion (ODTX) is one approach to characterize thermal behavior. Tim
Autor:
J. W. Florio, Carlos E. Castro, J L Klingmann, E G Dzenitis, K. Segraves, E T Alger, Evan Mapoles, J. G. Reynolds, D. M. Lord, Suhas Bhandarkar
Publikováno v:
Fusion Science and Technology. 55:269-275
Inertial confinementfusion ignition experiments in the National Ignition Facility require a capsule containing deuterium-tritium fuel at cryogenic temperatures. To better understand how to produce and control the required uniform fuel ice layer, expe
Autor:
Sharon J. Shields, Bradley R. Hart, Masood Z. Hadi, Sonia E. Létant, J. G. Reynolds, Staci R. Kane
Publikováno v:
Advanced Materials. 16:689-693
Publikováno v:
Applied Physics Letters. 111:082402
We have demonstrated a room temperature dilute magnetic semiconductor based on GaCrN epitaxial layers grown by metalorganic chemical vapor deposition. Saturation magnetization Ms increased when the GaCrN film is incorporated into a (p-GaN/i-GaCrN/n-G