Zobrazeno 1 - 10 of 49 pro vyhledávání: '"J. G. Pasko"'
1
Status of LWIR HgCdTe-on-Silicon FPA Technology
Autor: Whitney Mason, Yuanping Chen, S. Freeman, R. N. Jacobs, D. D. Edwall, Jose M. Arias, E. Piquette, M. Kangas, Andrew J. Stoltz, J. G. Pasko, M. Carmody, Nibir K. Dhar
Publikováno v: Journal of Electronic Materials. 37:1184-1188
The use of silicon as an alternative substrate to bulk CdZnTe for epitaxial growth of HgCdTe for infrared detector applications is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost of si
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1b2864a263046990846dcb0b8090757d
https://doi.org/10.1007/s11664-008-0434-3
Zobrazit plný text záznamu
2
LWIR HgCdTe on Si detector performance and analysis
Autor: G. Brill, John H. Dinan, Jose M. Arias, L. A. Almeida, Yuanping Chen, J. G. Pasko, Robert B. Bailey, Nibir K. Dhar, M. Carmody, D. D. Edwall, M. Groenert
Publikováno v: Journal of Electronic Materials. 35:1417-1422
We have fabricated a series of 256 pixel×256 pixel, 40 µm pitch LWIR focal plane arrays (FPAs) with HgCdTe grown on (211) silicon substrates using MBE grown CdTe and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientifi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2a8629ffd6e26fbb5cb32724cf2d020d
https://doi.org/10.1007/s11664-006-0277-8
Zobrazit plný text záznamu
3
Ten-inch molecular beam epitaxy production system for HgCdTe growth
Autor: Jagmohan Bajaj, J. G. Pasko, Donald N. B. Hall, D. D. Edwall, Jose M. Arias, Gerard Anthony Luppino, M. Zandian, Shane Jacobson, James D. Garnett, D. Scott, Mark Farris, Susan Parker, M. Daraselia
Publikováno v: Journal of Electronic Materials. 34:891-897
Growth of Hg1−xCdxTe by molecular beam epitaxy (MBE) has been under development since the early 1980s at Rockwell Scientific Company (RSC), formerly the Rockwell Science Center; and we have shown that high-performance and highly reproducible MBE Hg
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::41f7cf7aee7c94c253095df56b11a130
https://doi.org/10.1007/s11664-005-0038-0
Zobrazit plný text záznamu
4
Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance
Autor: G. Brill, Yuanping Chen, M. Carmody, Nibir K. Dhar, Jose M. Arias, John H. Dinan, M. Groenert, J. G. Pasko, D. D. Edwall, Jagmohan Bajaj, Andrew J. Stoltz, Scott A. Cabelli, L. A. Almeida, Robert B. Bailey
Publikováno v: Journal of Electronic Materials. 34:832-838
The use of silicon as a substrate alternative to bulk CdZnTe for epitaxial growth of HgCdTe for infrared (IR) detector applications is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost o
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e44208f9073859dfcf85cba35d872a68
https://doi.org/10.1007/s11664-005-0028-2
Zobrazit plný text záznamu
5
Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance
Autor: J. Molstad, L. A. Almeida, J. G. Pasko, D. D. Edwall, John H. Dinan, G. Brill, M. Daraselia, Yuanping Chen, J. K. Markunas, M. Carmody, Nibir K. Dhar
Publikováno v: Journal of Electronic Materials. 33:531-537
In the past several years, we have made significant progress in the growth of CdTe buffer layers on Si wafers using molecular beam epitaxy (MBE) as well as the growth of HgCdTe onto this substrate as an alternative to the growth of HgCdTe on bulk CdZ
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::22415b9e58961390d871cd02c2411a32
https://doi.org/10.1007/s11664-004-0042-9
Zobrazit plný text záznamu
6
Mid-wavelength infrared p-on-n Hg1−xCdxTe heterostructure detectors: 30–120 kelvin state-of-the-Art performance
Autor: Donald E. Cooper, G. Hildebrandt, Kadri Vural, Jose M. Arias, Donald N. B. Hall, James D. Garnett, Craig A. Cabelli, M. Zandian, J. G. Pasko, J. Chow, Mark Farris, M. Carmody, R. E. DeWames
Publikováno v: Journal of Electronic Materials. 32:803-809
We report on Hg1−xCdxTe mid-wavelength infrared (MWIR) detectors grown by molecular-beam epitaxy (MBE) on CdZnTe substrates. Current-voltage (I-V) characteristics of HgCdTe-MWIR devices and temperature dependence of focal-plane array (FPA) dark cur
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e183ce5577410a830ec8a5fc73b46feb
https://doi.org/10.1007/s11664-003-0074-6
Zobrazit plný text záznamu
7
Excess low frequency noise/I-V studies in p-on-n MBE LWIR Hg1−xCdxTe detectors
Autor: Priyalal S. Wijewarnasuriya, J. G. Pasko, D. D. Edwall, A. I. D'Souza, G. Hildebrandt, R. E. DeWames, Jose M. Arias, Jagmohan Bajaj
Publikováno v: Journal of Electronic Materials. 28:611-616
Excess low frequency noise is investigated for the first time in infrared MBE grown LWIR Hg1−xCdxTe double layer planar heterostructure (DLPH) detectors grown on lattice matched substrates. LWIR detectors having R0Aopt values at 40K in the 101–10
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::82a8b4943ceed12fae4a95634619ae75
https://doi.org/10.1007/s11664-999-0043-9
Zobrazit plný text záznamu
8
Dark current generating mechanisms in short wavelength infrared photovoltaic detectors
Autor: A. I. D'Souza, Jose M. Arias, M. Zandian, R. E. DeWames, J. G. Pasko, William E. Tennant, L. O. Bubulac, D. D. Edwall
Publikováno v: Journal of Electronic Materials. 27:722-726
The current-voltage characteristics and quantum efficiencies of double layer planar heterostructure photodiodes were investigated. Results are reported on devices with cutoff wavelengths of 1.8, 2.4, and 3.3 µm. For these respective devices, the dom
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9f1eb199924723f52dfc1064b686a374
https://doi.org/10.1007/s11664-998-0043-1
Zobrazit plný text záznamu
9
MBE P-on-n Hg1−xCdxTe heterostructure detectors on silicon substrates
Autor: G. Hildebrandt, M. Zandian, J. G. Pasko, Jose M. Arias, S. Sivananthan, D. D. Edwall, Priyalal S. Wijewarnasuriya, C. A. Chen, W. V. McLevige, Saroj Rujirawat, A. C. Chen, A. I. D'Souza
Publikováno v: Journal of Electronic Materials. 27:546-549
The capability of growing state-of-the-art middle wavelength infrared (MWIR)-HgCdTe layers by molecular beam epitaxy (MBE) on large area silicon substrates has been demonstrated. We have obtained excellent compositional uniformity with standard devia
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1d81a2ff7c5eab879bb192160ce11564
https://doi.org/10.1007/s11664-998-0013-7
Zobrazit plný text záznamu
10
Measurement of minority carrier lifetime in n-type MBE HgCdTe and its dependence on annealing
Autor: R. E. DeWames, J. G. Pasko, D. D. Edwall, Jose M. Arias, W. V. McLevige
Publikováno v: Journal of Electronic Materials. 27:698-702
Results are presented for minority carrier lifetime in n-type molecular beam epitaxy Hg1−xCdxTe with x ranging from 0.2 to 0.6. It was found that the lifetime was unintentionally degraded by post-growth annealing under Hg saturated conditions in a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::021b3bbc7c858636a76b18af6c81243d
https://doi.org/10.1007/s11664-998-0039-x
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje