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Characterization of GaP / InGaP and GaP / GaAsP strained-layer quantum wells grown by metalorganic chemical vapor deposition

Autor: F. J. Ciuba, J. G. Neff, K. G. Fertitta, Russell D. Dupuis, M.R. Islam, R.V. Chelakara

Publikováno v: Journal of Crystal Growth. 145:746-751

GaP/InGaP and GaP/GaAsP strained-layer quantum well (QW) structures with 3.0-5.0 nm thick well layers in the direct gap region were grown on GaP substrates by metalorganic chemical vapor deposition (MOCVD) using triethylgallium (TEGa) and ethyldimeth

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5e7ef6ec2b964223872c04fafc108d30
https://doi.org/10.1016/0022-0248(94)91137-1

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Growth of high-quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition

Autor: R.V. Chelakara, M.R. Islam, Russell D. Dupuis, J. G. Neff, F. J. Ciuba, Archie L. Holmes, K. G. Fertitta

Publikováno v: Journal of Crystal Growth. 145:179-186

In this paper, we present results of studies of high-quality InGaP quantum well (QW) heterostructures grown by metalorganic chemical vapor deposition (MOCVD). The QWs have been grown on GaAs: Si substrates having orientations of both (100) and (100)-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bbab13e5eb5f22a82bf89023ba8f365b
https://doi.org/10.1016/0022-0248(94)91047-2

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Very Smooth AIGaAs-GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition

Autor: C.J. Pinzone, Russell D. Dupuis, J. G. Neff

Publikováno v: Sixth International Conference Metalorganic Vapor Phase Epitaxy.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d32c0eb74aa6da5a378a72256a207a3d
https://doi.org/10.1109/movpe.1992.664970

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Very Smooth AiGaAs/GaAs Quantum-wells Grown By Metalorganic Chemical Vapor Disposition

Autor: C.J. Pinzone, R. D. Dupuis, J. G. Neff

Publikováno v: LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d0ba47166468287b6e87ba9fbebfbb20
https://doi.org/10.1109/leosst.1991.638944

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Short-period Superlattice InAiP-InGaP Quantum-well Heterostructures

Autor: J. G. Neff, P. A. Grudowski, R. V. Chelakara, K. G. Fertitta, F. J. Ciuba, Russell D. Dupuis, M.R. Islam, Archie L. Holmes

Publikováno v: Proceedings of IEE/LEOS Summer Topical Meetings: Integrated Optoelectronics.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::44569da56d746953b3ce16c85afbc18d
https://doi.org/10.1109/leosst.1994.700530

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Enhanced hot‐carrier spontaneous and stimulated recombination in a photopumped vertical cavity AlxGa1−xAs–GaAs quantum well heterostructure with multiple top and bottom native oxide mirrors

Autor: M. J. Ries, P. A. Grudowski, E. I. Chen, T. A. Richard, Nick Holonyak, Russell D. Dupuis, J. G. Neff, Steven A Maranowski

Publikováno v: Applied Physics Letters. 66:589-591

Data (300 and 77 K) are presented on the photopumped laser operation of AlxGa1−xAs–GaAs vertical cavity quantum well heterostructure crystals that exhibit enhanced hot‐carrier recombination. The mirrors defining the vertical cavity are formed b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9f2294e97a60f18d7c4489b5854f8bec
https://doi.org/10.1063/1.114022

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High‐quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition

Autor: F. J. Ciuba, Russell D. Dupuis, J. G. Neff, K. G. Fertitta, Archie L. Holmes

Publikováno v: Applied Physics Letters. 65:1823-1825

We report the growth of high‐quality GaN heteroepitaxial films on (0001) sapphire substrates by low‐pressure metalorganic chemical vapor deposition. These films have exhibited narrow x‐ray‐diffraction rocking curves with full‐width‐at‐h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e8ee8f9c295f84c44d9166126bece3a4
https://doi.org/10.1063/1.112855

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Short‐wavelength room‐temperature continuous‐wave laser operation of InAlP‐InGaP superlattices grown by metalorganic chemical vapor deposition

Autor: K. G. Fertitta, T. A. Richard, J. G. Neff, K. C. Hsieh, M.R. Islam, Nick Holonyak, R. V. Chelakara, Russell D. Dupuis, F. J. Ciuba, Archie L. Holmes

Publikováno v: Applied Physics Letters. 65:854-856

The growth and laser operation of high‐quality InAlP‐InGaP superlattice‐active‐region quantum‐well heterostructure lasers on GaAs substrates are reported. These heterostructures exhibit cw room‐temperature (300 K) optically pumped laser o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6d07f1c1482059b40b15c2c2ba92d096
https://doi.org/10.1063/1.112181

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MOCVD growth and characterization of AlGaP/GaP/InGaP/GaP strained-layer single quantum wells

Autor: M. Rabiul Islam, Russell D. Dupuis, J. G. Neff, R.V. Chelakara

Publikováno v: Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

The performance of semiconductor lasers can be significantly improved by using strained quantum wells as the active medium. A combination of biaxial strain and quantum confinement removes the valence band degeneracy at the center of the Brillouin zon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::941c1eec291d3a1ac81729c954d4b0ec
https://doi.org/10.1109/iciprm.1994.328181

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