Výsledky vyhledávání - "J. G. Couillard"

The effects of substrates on the characteristics of polycrystalline silicon thin film transistors

Autor: D G Ast, J G Couillard, Y Z Wang, Osama O. Awadelkarim

Publikováno v: Solid-State Electronics. 42:1689-1696

We report on the impact of substrates on n-channel and p-channel polycrystalline-silicon (poly-Si) thin film transistors (TFTs) performance and hot carrier stress (HCS) reliability. Corning Code 1737 glass, fused silica and oxidized Si were used as s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0a204cbdff48d92527242f9b20b11c02
https://doi.org/10.1016/s0038-1101(98)00085-9

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The effect of substrates on the performance and hot-carrier reliability of n-channel thin film transistors

Autor: Y Z Wang, D G Ast, J G Couillard, Osama O. Awadelkarim

Publikováno v: Semiconductor Science and Technology. 13:532-535

We have examined the impact of substrates on the performance and response to hot-carrier stress of polycrystalline silicon n-channel thin film transistors. Non-barrier coated Corning Code 1737 glass, fused silica and oxidized Si were used as substrat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f61b05f20c7d804d788c44ae1dd888d6
https://doi.org/10.1088/0268-1242/13/5/002

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Effect of RCA cleaning on the surface chemistry of glass and polysilicon films as studied by ToF-SIMS and XPS

Autor: J. G. Couillard, Tsu-Jae King, N. J. Binkowski, Francis P. Fehlner, D. Salamida, Chad B. Moore, E. C. Onyiriuka

Publikováno v: Surface and Interface Analysis. 26:270-277

The surface chemistry of an alkaline-earth boroaluminosilicate glass is changed by contact with chemical solutions. The present study shows that RCA cleaning creates a silica-rich surface on the glass. This altered surface can be removed by hydrofluo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bebed90bafa5f8ed5964706b08434c9e
https://doi.org/10.1002/(sici)1096-9918(199804)26:4<270::aid-sia371>3.0.co

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Hydrogen Implants for Layer Exfoliation

Autor: S. Cherekdjian, J. G. Couillard, C. Wilcox, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki

Publikováno v: AIP Conference Proceedings.

Researchers at Corning Incorporated have developed a process whereby single crystal silicon thin films are transferred onto a flat panel display glass substrate using hydrogen ion implantation. The energy of the implant controls the effective exfolia

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fa50dec2b91c0df7a5e5ef18d5cb1512
https://doi.org/10.1063/1.3548364

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Ballistic electron emission microscopy of laterally patterned microstructures

Autor: J. G. Couillard, Angela Davies, Harold G. Craighead

Publikováno v: Applied Physics Letters. 61:1040-1042

Ballistic electron emission microscopy (BEEM) has been used to investigate and image microfabricated Au/SiGe features. Electron beam lithography and dry etching were used to construct arrays of holes in a SiO2 layer and etched indentations in SiGe. T

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6e17e67a8bb6a16faa7795b1cbdc7deb
https://doi.org/10.1063/1.107709

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Photolithographic patterning of porous silicon

Autor: J. G. Couillard, Harold G. Craighead

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:161

Regions of light‐emitting porous silicon fabricated by anodic electrochemical etching have been patterned by photolithography. Samples were spin‐coated with photoresist, and contact photolithography was used to define the desired mask pattern. Ex

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d1dcafabdb02835b975496fbaa4a14dd
https://doi.org/10.1116/1.587176

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Erratum: ‘‘Ballistic electron emission microscopy investigation of SiGe nanostructures fabricated using reactive-ion etching’’ [J. Vac. Sci. Technol. B 10, 3112 (1992)]

Autor: Angela Davies, J. G. Couillard, Harold G. Craighead

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:766

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fdfecdf07c780be5162ce3d5cfe706b7
https://doi.org/10.1116/1.586785

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High-resolution reactive ion etching of SiGe alloys

Autor: J. G. Couillard, Harold G. Craighead

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:717

Epitaxial Si1−xGex (x=0.08–0.12) films were reactive ion etched in fluorine‐ and chlorine‐based plasmas. The etch characteristics are similar to those for pure Si. By studying the effects of the etch parameters, such as power, pressure, and g

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d9b9a266456ef58dc6d25a26710ac3ab
https://doi.org/10.1116/1.586777

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Ballistic electron emission microscopy investigation of SiGe nanostructures fabricated using reactive-ion etching

Autor: Harold G. Craighead, Angela Davies, J. G. Couillard

Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:3112

We have applied ballistic electron emission microscopy (BEEM) to microfabricated semiconductor structures in order to study the damage effects of dry etching. Structures were defined in Si0.92Ge0.08 using electron‐beam lithography and reactive‐io

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::82fb5b10672a15b799934cda9452eaa5
https://doi.org/10.1116/1.585939

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