Zobrazeno 1 - 2
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pro vyhledávání: '"J. G. Bomer"'
Autor:
Rajendra P. Shukla, J. G. Bomer, Daniel Wijnperle, Naveen Kumar, Vihar P. Georgiev, Aruna Chandra Singh, Sivashankar Krishnamoorthy, César Pascual García, Sergii Pud, Wouter Olthuis
Publikováno v:
Sensors, Vol 22, Iss 15, p 5783 (2022)
Label-free field-effect transistor-based immunosensors are promising candidates for proteomics and peptidomics-based diagnostics and therapeutics due to their high multiplexing capability, fast response time, and ability to increase the sensor sensit
Externí odkaz:
https://doaj.org/article/1aca4fd7ae674cb68e3609cc5ee5eddc
Publikováno v:
IEEE Transactions on Electron Devices, 66(10):8822594, 4354-4360. IEEE
In this article, we study the ion-sensitive gated bipolar transistor (ISBiT) by forward biasing the source-body diode of the ion-sensitive field-effect transistor (ISFET). Based on theory, extensive TCAD device simulations, and experiments, it is sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b135c95b407d49760362dcfbef892db
https://doi.org/10.1109/ted.2019.2933666
https://doi.org/10.1109/ted.2019.2933666