Zobrazeno 1 - 10
of 53
pro vyhledávání: '"J. Faguet"'
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract Cryogenic Atomic Layer Etching (cryo-ALE) of SiO2 based on alternating a C4F8 molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrome
Externí odkaz:
https://doaj.org/article/0a7f4f228c87483582d3a8e6f0585dd8
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-1 (2022)
Externí odkaz:
https://doaj.org/article/ba4145238f7e4139841b9675123f3738
Akademický článek
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Autor:
G. Antoun, T. Tillocher, A. Girard, P. Lefaucheux, J. Faguet, H. Kim, D. Zhang, M. Wang, K. Maekawa, C. Cardinaud, R. Dussart
Publikováno v:
Journal of Vacuum Science & Technology A. 40:052601
This article first presents quasi- in situ XPS measurements on Si3N4 and a-Si samples after exposure to an SiF4/O2 plasma at different cryogenic temperatures. A different behavior is observed between the two materials at −65 °C, which has led to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6acd6e8b0f307c44c8a2f64cb1a16a4
https://doi.org/10.1116/6.0001885
https://doi.org/10.1116/6.0001885
Publikováno v:
Scientific Reports
Scientific Reports, Nature Publishing Group, 2021, 11 (1), pp.357. ⟨10.1038/s41598-020-79560-z⟩
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Scientific Reports, Nature Publishing Group, 2021, 11 (1), pp.357. ⟨10.1038/s41598-020-79560-z⟩
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Cryogenic Atomic Layer Etching (cryo-ALE) of SiO2 based on alternating a C4F8 molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrometry (QMS)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d28eb2e9bd2616f552fcbd8743617a6
https://doi.org/10.1038/s41598-020-79560-z
https://doi.org/10.1038/s41598-020-79560-z
Autor:
G. Antoun, A. Girard, T. Tillocher, P. Lefaucheux, J. Faguet, K. Maekawa, C. Cardinaud, R. Dussart
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:013013
A silicon oxyfluoride layer was deposited on a-Si samples using SiF4/O2 plasma at different temperatures between −100°C and −40 °C. In situ X-ray photoelectron spectroscopy measurements were then performed to characterize the deposited layer. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd9028668c4f3758e0decebc049badd5
https://doi.org/10.1149/2162-8777/ac4c7d
https://doi.org/10.1149/2162-8777/ac4c7d
Autor:
P. Lefaucheux, Aurélie Girard, T. Tillocher, S. Tahara, Christophe Cardinaud, G. Antoun, Remi Dussart, Kaoru Maekawa, J. Faguet, K. Yatsuda, K. Yamazaki
Publikováno v:
Japanese Journal of Applied Physics
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2019, 58 (SE), pp.SEEB03. ⟨10.7567/1347-4065/ab1639⟩
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2019, 58 (SE), pp.SEEB03. ⟨10.7567/1347-4065/ab1639⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78862ff00f94693581891052130ed8be
https://hal.archives-ouvertes.fr/hal-02139391
https://hal.archives-ouvertes.fr/hal-02139391
Autor:
B. Altemus, Vincent Jousseaume, Carine Ladner, J. El Sabahy, E. Ollier, J. Faguet, C. Yeromonahos, K. Benedetto
Publikováno v:
Sensors and Actuators B: Chemical
Sensors and Actuators B: Chemical, Elsevier, 2018, 271, pp.271-279. ⟨10.1016/j.snb.2018.05.042⟩
Sensors and Actuators B: Chemical, 2018, 271, pp.271-279. ⟨10.1016/j.snb.2018.05.042⟩
Sensors and Actuators B: Chemical, Elsevier, 2018, 271, pp.271-279. ⟨10.1016/j.snb.2018.05.042⟩
Sensors and Actuators B: Chemical, 2018, 271, pp.271-279. ⟨10.1016/j.snb.2018.05.042⟩
International audience; The fabrication of gravimetric gas sensors based on Nano Electro Mechanical System (NEMS) requires the use ofa chemical sensitive layer that is uniformly deposited by a solvent-free deposition technique. In this work, weshow t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8bc71724375538b03e3711e22d5b7952
https://hal.archives-ouvertes.fr/hal-01849982
https://hal.archives-ouvertes.fr/hal-01849982
Autor:
J. Faguet, C. Ribiere, B. Altemus, Stephane Minoret, C. Ratin, K. Ichiki, Vincent Jousseaume, Thierry Mourier, M. Gottardi
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2017, 167, pp.80-84. ⟨10.1016/j.mee.2016.11.005⟩
Microelectronic Engineering, 2017, 167, pp.80-84. ⟨10.1016/j.mee.2016.11.005⟩
Microelectronic Engineering, Elsevier, 2017, 167, pp.80-84. ⟨10.1016/j.mee.2016.11.005⟩
Microelectronic Engineering, 2017, 167, pp.80-84. ⟨10.1016/j.mee.2016.11.005⟩
In this study, SiOCH thin films were deposited by filament assisted chemical vapor deposition using methyltriethoxysilane. It is shown that annealing the films at 400°C (with or without UV-assist) is required to meet specifications in terms of diele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb6003764e34db17a26d42d729f93a9a
https://hal-cea.archives-ouvertes.fr/cea-02202437
https://hal-cea.archives-ouvertes.fr/cea-02202437
Autor:
K. Yamazaki, P. Lefaucheux, K. Maekawa, J. Faguet, G. Antoun, K. Yatsuda, T. Tillocher, Remi Dussart
Publikováno v:
Applied Physics Letters. 115:153109
Atomic Layer Etching is performed on SiO2 samples cooled down to a very low temperature (below −100 °C). C4F8 gas flow is injected and molecules physisorb on the cooled surfaces. Etching is then carried out using argon plasma with a low ion energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c0c09c1a2b07395a0dbf05156357129
https://doi.org/10.1063/1.5119033
https://doi.org/10.1063/1.5119033