Zobrazeno 1 - 10
of 18
pro vyhledávání: '"J. F. Shanley"'
Autor:
M. A. Rader, F. J. Weaver, J. J. Voelker, A. R. Reisinger, S. J. Caputi, Thomas H. Myers, J. F. Shanley
Publikováno v:
Journal of Applied Physics. 71:483-488
Experimental current–versus–bias‐voltage data obtained on Hg‐diffused, p‐n homojunction, infrared photodiodes are critically examined against a theoretical model. A satisfactory agreement between measured and predicted data requires that th
Publikováno v:
Physics of Narrow Gap Semiconductors ISBN: 9783540111917
A contactless optical technique for measuring carrier lifetimes and defect levels in Hg0.7Cd0.3Te is presented. The technique is based on measuring the modulation of the absorption of a probe beam with E Eg. Initial data on near intrinsic and p-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f887d1e4be31fa6852e97d725d475e5
https://doi.org/10.1007/3-540-11191-3_23
https://doi.org/10.1007/3-540-11191-3_23
Publikováno v:
MTT-S International Microwave Symposium Digest.
A traveling-wave maser amplifier, using iron-doped rutile as the active material, has been developed in the frequency range 85 - 95 GHz. The device has demonstrated stable traveling-wave maser gain over an instantaneous bandwidth of 140 MHz and is ca
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1:1700-1705
The optically modulated absorption (OMA) effect has been examined in p‐type (NA−ND≊2×1015 cm−3) Hg0.785 Cd0.215Te. The effect has been used to measure the excess hole lifetime for temperatures between 85 and 250 K. The measured lifetimes agr
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 24:725-730
A description is given of a newly developed traveling-wave maser amplifier for use at the new 13.7-m millimeter-wave radio teleseope of the Five College Radio Astronomy Observatory (FCRAO) near Amherst, MA. The maser amplifier, using iron-doped rutil
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 3:259-263
Photoinduced absorption modulation near the band gap is used for the first time to measure the excess electron lifetime and gap energy in several samples of bulk and LPE Hg0.2Cd0.8Te. The samples were primarily n‐type with carrier concentrations fr
Publikováno v:
Applied Physics Letters. 40:338-340
We have applied the technique of optical modulation spectroscopy to the narrow‐gap semiconductor Hg1−xCdxTe. This technique consists of measuring the change ΔIp in the transmitted intensity Ip of a tunable dc probe beam (with photon energy h/ωP
Publikováno v:
Applied Physics Letters. 43:941-943
The lifetime of excess photogenerated carriers has been measured as a function of temperature and carrier concentration in p‐type Hg0.68Cd0.32Te by contactless optical modulation spectroscopy. An excess carrier lifetime related to impurity substitu
Publikováno v:
Applied Physics Letters. 38:261-263
A new contactless optical modulation technique for the determination of photogenerated carrier lifetimes in semiconductors is presented. The technique consists of measuring the modulation in the transmitted intensity of a dc probe beam (h/ω
Autor:
C. T. Flanagan, J. F. Shanley
Publikováno v:
SPIE Proceedings.
This paper presents experimental results describing the dc and CO2 laser heterodyne characteristics of single element and four element n+-n--p Hg0.8Cd0.2Te photodiode arrays. These diodes exhibited wide bandwidths (~2.0 GHz) and fairly good effective