Zobrazeno 1 - 10
of 215
pro vyhledávání: '"J. F. Schetzina"'
Autor:
J.D. Brown, J.D. Benson, J. Boney, Thomas E. Nohava, K.V. Dang, Subash Krishnankutty, W. Yang, S. Harney, J. F. Schetzina, J. Matthews
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 5:35-41
Visible-blind UV cameras based on a 32 × 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes have been successfully demonstrated. The photodiode arrays were hybridized to silicon readout integrated circuits (ROICs) using In bump bonds. Outp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c74a61a0d38a3ffcad733784876f6385
https://doi.org/10.1557/s1092578300004051
https://doi.org/10.1557/s1092578300004051
Publikováno v:
Journal of Electronic Materials. 28:295-300
Traditional epitaxial growth of GaN by metalorganic vapor phase epitaxy (MOVPE) on mismatched substrates such as sapphire or SiC produces a columnar material consisting of many hexagonal grains ∼0.2–1.0 µm in diameter. The epitaxial-lateral-over
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1968288c57c87f87b679c3d3a9ea138b
https://doi.org/10.1007/s11664-999-0030-1
https://doi.org/10.1007/s11664-999-0030-1
Autor:
Y. Yang, J. Schäfer, Leonard J. Brillson, S. H. Xu, A. P. Young, G. J. Lapeyre, Mark Johnson, H. Cruguel, J. F. Schetzina
Publikováno v:
Journal of Electronic Materials. 28:308-313
Depth-dependent low energy cathodoluminescence spectroscopy (CLS) has been used to investigate the near-surface optical properties of n-type GaN epelayers grown under various growth conditions. Both bare and reacted-Mg/n-GaN and Al/n-GaN (annealed to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c48e1db5780e902d30b4f998d94664f4
https://doi.org/10.1007/s11664-999-0032-z
https://doi.org/10.1007/s11664-999-0032-z
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 4:502-507
The design of optoelectronic devices fabricated from III-nitride materials is aided by knowledge of the refractive index and absorption coefficient of these materials. The optical properties of GaN, AlN and AlGaN grown by MOVPE on sapphire substrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b466a1231b06133292f1cfbb7003411f
https://doi.org/10.1557/s1092578300002957
https://doi.org/10.1557/s1092578300002957
Publikováno v:
Journal of Crystal Growth. 195:333-339
Growth of GaN by MOVPE on mismatched substrates such as sapphire and SiC produces a columnar material consisting of many hexagonal grains ∼0.2–1.0 μm in diameter. However, the epitaxial–lateral-overgrowth (ELO) process for GaN creates a new ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b5bc9faaeadec83a5510adba11f5c97
https://doi.org/10.1016/s0022-0248(98)00638-1
https://doi.org/10.1016/s0022-0248(98)00638-1
Publikováno v:
Materials Science Forum. :1161-1166
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fe017d8651f8fdff39be6ee63b7e887
https://doi.org/10.4028/www.scientific.net/msf.264-268.1161
https://doi.org/10.4028/www.scientific.net/msf.264-268.1161
Publikováno v:
Journal of Crystal Growth. :546-551
This paper describes substrate surface preparation techniques used in the development II–VI light emitting diode and laser diode structures on high-quality, bulk ZnSe substrates supplied by Eagle-Picher Industries. The use of ZnSe substrates elimin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8845fb2494ade90e974719f42c23070e
https://doi.org/10.1016/s0022-0248(96)01022-6
https://doi.org/10.1016/s0022-0248(96)01022-6
Autor:
W. C. Hughes, W. H. Rowland, Mark Johnson, J. W. Cook, J. M. Zavada, M. Leonard, John A. Edmond, J. F. Schetzina, Hua-Shuang Kong
Publikováno v:
Journal of Crystal Growth. :72-78
GaN, AIGaN and InGaN films have been grown by molecular beam epitaxy (MBE) using RF plasma sources for the generation of active nitrogen. These films have been deposited homoepitaxially onto GaN/SiC substrates and hetero-epitaxially onto LiGaO 2 subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81e1753bf467a1fa4310000c3186261a
https://doi.org/10.1016/s0022-0248(96)01019-6
https://doi.org/10.1016/s0022-0248(96)01019-6
Autor:
K.A. Bowers, Mark Johnson, W. H. Rowland, W. C. Hughes, John A. Edmond, J. Ren, J. F. Schetzina, N.A. El Masry, Shizuo Fujita, Y. W. He, J. W. Cook
Publikováno v:
Solid-State Electronics. 41:213-218
Growth of III–V nitrides by molecular beam epitaxy (MBE) is being studied at NCSU using an r.f. nitrogen plasma source. GaN SiC substrates consisting of ∼ 3 μm thick GaN buffer layers grown on 6HSiC wafers by MOVPE at Cree Research Inc. are b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28eb457ea8ee0003f894282c97d56691
https://doi.org/10.1016/s0038-1101(96)00169-4
https://doi.org/10.1016/s0038-1101(96)00169-4
Autor:
W. H. Rowland, W. C. Hughes, Shizuo Fujita, J. Ren, J. F. Schetzina, J. W. Cook, Mark Johnson, Yufan He, John A. Edmond, Nadia A. El-Masry
Publikováno v:
Journal of Electronic Materials. 25:793-797
The growth of GaN and AlGaN by molecular beam epitaxy (MBE) has been studied using GaN/SiC substrates. The GaN/SiC substrates consisted of ∼3 μm thick GaN buffer layers grown on 6H-SiC wafers by metalorganic vapor phase epitaxy (MOVPE) at Cree Res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2395002ad23efa18b8e831b655adbcaa
https://doi.org/10.1007/bf02666638
https://doi.org/10.1007/bf02666638