Zobrazeno 1 - 10
of 384
pro vyhledávání: '"J. F. Palmier"'
Autor:
P. Tronc, B. Reid, B. Sermage, Ph. Roussignol, J. F. Palmier, G. Wang, R. Maciejko, Jean-Christophe Harmand
Publikováno v:
Superlattices and Microstructures. 24:347-352
We present results of time-resolved photoluminescence experiments performed at 77 K on a GaInAs/AlGaInAs superlattice grown by molecular beam epitaxy and lattice matched to an InP substrate. The superlattice is the intrinsic part of a p–i–n diode
Publikováno v:
Scopus-Elsevier
A simple optical to mm-wave conversion device is reported. It is based upon a GaInAs/AlInAs superlattice designed to produce mm-wave generation through the miniband negative conductance. It is driven by a light signal modulated near the oscillator fu
Autor:
N. Sahri, Jean-Christophe Harmand, H. Le Person, J. C. Esnault, Christophe Minot, J. F. Palmier, J.P. Medus
Publikováno v:
Superlattices and Microstructures. 23:1323-1332
We report microwave and temporal measurements on nonlinear transport in GaInAs/AlInAs superlattice n + n − n + diodes. The superlattices have wide minibands, wider than 80 meV. The microwav experiments are performed for 0–65 GHz. The diodes exhib
Publikováno v:
Physical Review B. 55:2274-2279
We report on conduction-band offset measurements in InP-${\mathrm{In}}_{0.53}$ ${\mathrm{Ga}}_{0.47}$ As and InP-${\mathrm{Al}}_{0.48}$ ${\mathrm{In}}_{0.52}$ As heterostructures using internal photoemission, temperature-dependent current-voltage exp
Publikováno v:
Optical and Quantum Electronics. 29:651-660
This paper presents a self-consistent 1-D multiquantum-well laser simulation in which, for the first time, the Schro¨dinger equation is solved over the whole quantum-well zone, taking into account well-to-well coupling. The computed light-intensity
Autor:
J. C. Portal, F. Aristone, Duncan K. Maude, J.L Gauffier, F. Mollot, Jean-Christophe Harmand, L. Dmowski, B. Goutiers, M. Eremets, P. Gassot, J. F. Palmier
Publikováno v:
Solid-State Electronics. 40:185-189
Hydrostatic pressure (0–13 kbar) has been used to probe the Bloch transport in GaAs AlAs and Ga 0.47 In 0.53 As Al 0.48 In 0.52 As short-period superlattices between 77 K and room temperature. We show that for both types of superlattices, the width
Autor:
V. P. Kochereshko, J. F. Palmier, P. Tronc, Jean-Christophe Harmand, Jerome Depeyrot, G. Wang
Publikováno v:
Superlattices and Microstructures. 16:321-326
We studied some GaInAs-AlGaInAs semiconductor superlattices grown by molecular beam epitaxy and lattice matched to InP substrates. We performed photocurrent and photocurrent-voltage under monochromatic illumination at different energies measurements.
Publikováno v:
physica status solidi (b). 183:455-467
The temperature variations (between 9 and 80 K) of the ratio Q=I -1 /I 0 of the intensities of the -1 and 0 peaks of the Wannier-Stark ladder in a GaAs-Ga 0.65 Al 0.35 As superlattice under an electric field are interpreted. The model is based on the
Publikováno v:
Semiconductor Science and Technology. 9:789-792
We investigate the nonlinear conduction mechanisms of electrons in a semiconductor superlattice miniband. Experimental results obtained from time-of-flight measurements in GaAs/AlAs superlattices are compared with analytical semiclassical approaches.
Publikováno v:
Annalen der Physik. 506:137-144
In this paper we report on the observation of response of a Bloch oscillator at room temperature to a THz-field of a frequency larger than the Bloch frequency. The oscillator consisted of a semiconductor superlattice structure, with an applied dc vol