Zobrazeno 1 - 10
of 63
pro vyhledávání: '"J. F. Nodin"'
Autor:
S. Bianchi, I. Muñoz-Martin, E. Covi, A. Bricalli, G. Piccolboni, A. Regev, G. Molas, J. F. Nodin, F. Andrieu, D. Ielmini
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-14 (2023)
A big challenge for artificial intelligence is to gain the ability of learning by experience like biological systems. Here Bianchi et al. propose a hardware neural network based on resistive-switching synaptic arrays which dynamically adapt to the en
Externí odkaz:
https://doaj.org/article/1fd89242574943b3ba52bdec76007f2c
Autor:
L. Reganaz, D. Deleruyelle, Q. Rafhay, J. Minguet Lopez, N. Castellani, J. F. Nodin, A. Bricalli, G. Piccolboni, G. Molas, F. Andrieu
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::321b56f0a9151384af9e1c720e5b3e21
https://doi.org/10.1109/irps48203.2023.10117882
https://doi.org/10.1109/irps48203.2023.10117882
Akademický článek
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Autor:
Amir Regev, D. Green, G. Piccolboni, Alessandro Bricalli, W. Goes, P. Blaise, G. Molas, J. F. Nodin
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
During the last few years, oxide-based ReRAM technology has attracted intense industrial and scientific research interest. Therefore, we have performed an in-depth computational study with a focus on data retention besides the resistive switching and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20becfe5b90f3fb07da1aae129863d3f
https://doi.org/10.1109/imw51353.2021.9439623
https://doi.org/10.1109/imw51353.2021.9439623
Akademický článek
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Autor:
J-F Nodin, Gabriel Molas, Etienne Nowak, Elisa Vianello, D. R. B. Ly, C. Fenouillet-Beranger, J.-P. Noel, Giacomo Indiveri, Bastien Giraud, Alessandro Grossi, Gilbert Sassine, N. Castellani
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM 2018)
2018 IEEE International Electron Devices Meeting (IEDM 2018), IEEE, Dec 2018, San Francisco, CA, United States. pp.20.3.1-20.3.4, ⟨10.1109/IEDM.2018.8614603⟩
2018 IEEE International Electron Devices Meeting (IEDM 2018), IEEE, Dec 2018, San Francisco, CA, United States. pp.20.3.1-20.3.4, ⟨10.1109/IEDM.2018.8614603⟩
International audience; Resistive Memory (RRAM)-based Ternary Content Addressable Memories (TCAMs) were developed to reduce cell area, search energy and standby power consumption beyond what can be achieved by SRAM-based TCAMs. In previous works, RRA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d10faf3c63a9f463455a0e0925d8f5cc
https://hal.archives-ouvertes.fr/hal-02939330/document
https://hal.archives-ouvertes.fr/hal-02939330/document
Autor:
B. Traore, F. Perrin, L. Perniola, Emmanuel Nolot, E. Vianello, Nicolas Vaxelaire, F. Mazen, J. Coignus, Alessandro Grossi, P. Blaise, L. Lachal, S. Bernasconi, S. Pauliac, E. Nowak, S. Chevalliez, J. F. Nodin, R. Crochemore, L. Grenouillet, M. Barlas, C. Pellissier
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
A thorough insight of Si implantation in HfU2-based OXRAM is presented, from a material standpoint up to a 4 kbit 1T-1R array. We demonstrate for the first time that local implantation enables switching area localization and significantly decreases f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e525df8362cea51b975b7d5fc88fe9c4
https://doi.org/10.1109/iedm.2017.8268392
https://doi.org/10.1109/iedm.2017.8268392
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
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Publikováno v:
2017 International Conference of Microelectronic Test Structures (ICMTS).
In this paper we present a new test vehicle designed for Resistive Random Access Memories (RRAM) arrays (from single bit to 1Mbits) characterization. The arrays structure, the decoders, and the selectors are explained as well as the electrical setup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fed960d1e6d5f24375fabd69ca9a6714
https://doi.org/10.1109/icmts.2017.7954276
https://doi.org/10.1109/icmts.2017.7954276
Autor:
Blaise Yvert, Thilo Werner, Olivier Bichler, Etienne Nowak, Luca Perniola, J. F. Nodin, Alessandro Grossi, B. DeSalvo, Elisa Vianello
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM)
2016 IEEE International Electron Devices Meeting (IEDM), Dec 2016, San Francisco, United States. pp.16.6.1-16.6.4, ⟨10.1109/IEDM.2016.7838433⟩
2016 IEEE International Electron Devices Meeting (IEDM), Dec 2016, San Francisco, United States. pp.16.6.1-16.6.4, ⟨10.1109/IEDM.2016.7838433⟩
Conference of 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference Date: 3 December 2016 Through 7 December 2016; Conference Code:126284; International audience; In this paper, we propose a new circuit architecture and a reading/p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13aa0fdab7c6e62721569a0c6b4e4374
https://hal-cea.archives-ouvertes.fr/cea-01839875
https://hal-cea.archives-ouvertes.fr/cea-01839875