Zobrazeno 1 - 10
of 48
pro vyhledávání: '"J. F. Morar"'
Autor:
Philip E. Batson, J. F. Morar
Publikováno v:
Physical Review Letters. 71:609-612
Spatially resolved electron energy loss spectra of the Si 2p core excitation are obtained in transmission through a single cross section of a 3 nm thick Ge 40 Si 60 quantum well. The spectra yield the positions of the L 1 and Δ 1 conduction band min
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e6a03ab257e4d39c6f8c6ed6d694ae0
https://doi.org/10.1103/physrevlett.71.609
https://doi.org/10.1103/physrevlett.71.609
Publikováno v:
Journal of Applied Physics. 71:4230-4243
Compositionally graded films of SiGe/Si(100) and GaInAs/GaAs were grown under different conditions in order to investigate the different modes of strain relaxation associated with the compositional grading. We show that, when the growth conditions ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8e5f0de243a95651a8ba9a4d64d31d5
https://doi.org/10.1063/1.350803
https://doi.org/10.1063/1.350803
Publikováno v:
Applied Physics Letters. 61:192-194
We report the first measurements of band‐gap energy versus applied hydrostatic pressure in the Si1−xGex system, a result achievable only with the recent availability of high‐quality alloys. The Si/Si1−xGex (x=0.05–0.25) quantum wells used h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84471c15dac8c27b707e8f736d984144
https://doi.org/10.1063/1.108215
https://doi.org/10.1063/1.108215
Autor:
J. F. Morar, Philip E. Batson
Publikováno v:
Applied Physics Letters. 59:3285-3287
Transmission electron energy‐loss spectroscopy has been used to follow the positions of the Δ1 and L1 conduction‐band minima, and the L3 saddle point, as a function of Ge content in GexSi1−x (x=0–0.95) alloys. By analyzing the shape of the S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fae1434c8ccf72b4cc5672c2aed3e454
https://doi.org/10.1063/1.105707
https://doi.org/10.1063/1.105707
Publikováno v:
Physical review. B, Condensed matter. 47(7)
We describe a new method for determining band lineups at semiconductor heterojunctions, applicable to Si-Ge systems. Spatially resolved transmission electron-energy-loss spectroscopy is used to detect bulk core-to-conduction-band transitions in alloy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::653f8dff46a0b72f09ab553c8a843bed
https://pubmed.ncbi.nlm.nih.gov/10006544
https://pubmed.ncbi.nlm.nih.gov/10006544
Publikováno v:
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 ISBN: 9781489915900
The distribution of oxidation states at various SiO2/Si interfaces is determined using surface-sensitive, high-resolution Si2p core level spectroscopy with synchrotron radiation. It provides a critical test of current structural models for the interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e35d140b5d26009a6ee17a9cad837ffb
https://doi.org/10.1007/978-1-4899-1588-7_25
https://doi.org/10.1007/978-1-4899-1588-7_25
Publikováno v:
Physical review letters. 66(22)
We describe anomalous strain relaxation in graded SiGe superlattices and thin films. This relaxation is characterized by the presence of dislocations in the Si substrate, as well as in the lower part of the film or superlattice, and results in a disl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d060df3e59ec2ed0bd3d410f74b12e47
https://pubmed.ncbi.nlm.nih.gov/10043649
https://pubmed.ncbi.nlm.nih.gov/10043649
Autor:
Philip E. Batson, J. F. Morar
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 51:816-817
Ge/Si quantum well structures show a high hole mobility as the heavy hole bands are shifted to lower energy under bi-axial strain produced by lattice mismatch between the well and the Si substrate. This strain can also split and shift the conduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d0bfe5e2ead1034972fd73ddf7c6fdc
https://doi.org/10.1017/s042482010014991x
https://doi.org/10.1017/s042482010014991x
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 50:1340-1341
The positions of the band edges on either side of a semi-conductor heterojunction determine the electrical properties of the interface by defining the potential barrier to transport experienced by an electron or hole. This behavior dominates the func
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83a247f26c2e51114a4df316dd105003
https://doi.org/10.1017/s0424820100131334
https://doi.org/10.1017/s0424820100131334
Autor:
Philip E. Batson, J. F. Morar
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2022
The energies of the Δ1 and L1 conduction band minima and the L3 saddle point have been measured in Si1−xGex (x=0.0–0.95) alloys using spatially resolved electron energy‐loss spectroscopy. Measurements were carried out in a scanning transmissio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a25c9fbc175edc1ca723e1ec8fbc55b1
https://doi.org/10.1116/1.586311
https://doi.org/10.1116/1.586311