Zobrazeno 1 - 10
of 108
pro vyhledávání: '"J. F. Millithaler"'
Aptamers represent a challenging field of research, relevant for diagnosis in macular degeneration, cancer, thrombosis and many inflammatory diseases, and promising in drug discovery and development. Their selection is currently performed by a stable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31a798233ff9e3a9b076660ca6e3da86
https://hdl.handle.net/11587/438238
https://hdl.handle.net/11587/438238
Autor:
Javier Mateos, O. Garcia-Perez, Juan A. Delgado-Notario, Daniel Vaquero, Vito Clericò, J. A. Novoa-Lopez, Tomas Gonzalez, J. F. Millithaler, Ignacio Iniguez-de-la-Torre, H. Sanchez-Martin, Y. Lechaux
Publikováno v:
GREDOS. Repositorio Institucional de la Universidad de Salamanca
Universitat Politècnica de Catalunya (UPC)
GREDOS: Repositorio Institucional de la Universidad de Salamanca
Universidad de Salamanca (USAL)
Universitat Politècnica de Catalunya (UPC)
GREDOS: Repositorio Institucional de la Universidad de Salamanca
Universidad de Salamanca (USAL)
[EN]In this work, In0.53Ga0.47As planar Gunn diodes specifically designed for providing oscillations at frequencies below 30 GHz have been fabricated and characterized. Different types of measurements were used to define a set of consistent methods f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd16c8a3405a2fbeb1d3c2b440ee57ed
http://hdl.handle.net/10366/144051
http://hdl.handle.net/10366/144051
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 65:1435-1439
In this brief, an innovative terahertz (THz) ballistic deflection transistor (BDT) travelling wave amplifier (TWA) system is proposed. The BDT is an innovated technology device based on InGaAs/InAlAs/InP, able to operate at THz frequencies. The whole
Publikováno v:
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC).
In this novel work, we present the experimental result of electric field distribution of in-plane graphene structure by investigating the IV-CV measurements at room temperature. In this work, we also studied the Raman spectroscopy at 532nm and correl
Publikováno v:
NEWCAS
In this paper a Terahertz (THz) Ballistic Deflection Transistor (BDT) Travelling-Wave-Amplifier (TWA) with a THz Ring Hybrid Coupler is developed. The BDT is a novel device based on InGaAs/InAlAs/InP, which is capable of operating at THz frequencies.
Publikováno v:
ISQED
In this paper, we present a Terahertz (THz) Travelling-Wave-Amplifier (TWA) design using a Ballistic Deflection Transistor (BDT). The BDT is an emerging functional device based on InGaAs/InAlAs/InP, which can operate at THz frequencies. A transistor
Autor:
Jan Grahn, J. F. Millithaler, Javier Mateos, Xavier Wallart, Christophe Gaquiere, P. Sangare, Per-Åke Nilsson, Guillaume Ducournau, Ignacio Iniguez-de-la-Torre, Tomas Gonzalez, Andreas Westlund, Ludovic Desplanque
Publikováno v:
Solid-State Electronics. 104:79-85
Design optimization of the InAs self-switching diode (SSD) intended for direct zero-bias THz detection is presented. The SSD, which consists of nanometer-sized channels in parallel, was described using an equivalent small-signal circuit. Expressions
Autor:
Luca Varani, Ignacio Iniguez-de-la-Torre, Christophe Gaquiere, P. Sangare, Tomas Gonzalez, Carlos Daher, Javier Mateos, Philippe Nouvel, J. F. Millithaler, Guillaume Ducournau, Jérémi Torres
Publikováno v:
GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname
IEEE Transactions on Terahertz Science and Technology
IEEE Transactions on Terahertz Science and Technology, Institute of Electrical and Electronics Engineers, 2014, 4 (6), pp.670-677. ⟨10.1109/TTHZ.2014.2356296⟩
IEEE Transactions on Terahertz Science and Technology, 2014, 4 (6), pp.670-677. ⟨10.1109/TTHZ.2014.2356296⟩
instname
IEEE Transactions on Terahertz Science and Technology
IEEE Transactions on Terahertz Science and Technology, Institute of Electrical and Electronics Engineers, 2014, 4 (6), pp.670-677. ⟨10.1109/TTHZ.2014.2356296⟩
IEEE Transactions on Terahertz Science and Technology, 2014, 4 (6), pp.670-677. ⟨10.1109/TTHZ.2014.2356296⟩
In this paper, we perform, by means of Monte Carlo simulations and experimental measurements, a geometry optimization of GaN-based nano-diodes for broadband Terahertz direct detection (in terms of responsivity) and mixing (in terms of output power).
Publikováno v:
2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC).
In this paper, a new design of Terahertz (THz) Ring Hybrid Coupler Based on Parallel Plate Dielectric Waveguide with Signal Line inserted (PPDWS) is proposed. The PPDWS is a simple transmission line, easy to fabricate, with a low average loss of 0.45
Autor:
J. F. Millithaler, Nazir Hossain, Tomas Gonzalez, Ignacio Iniguez-de-la-Torre, Martin Margala, Poorna Marthi, J. Mateos
Publikováno v:
2016 Lester Eastman Conference (LEC).
This paper presents Monte Carlo simulations of a unique non-linear device called Ballistic Deflection Transistor. A self-consistent model for surface charges has been used and has shown a remarkable efficiency to reproduce the non-linearity. A dynami