Zobrazeno 1 - 10
of 16
pro vyhledávání: '"J. F. Klem"'
Autor:
Jyoti Biswas, Luca Cultrera, Wei Liu, Erdong Wang, John Skaritka, Kim Kisslinger, S. D. Hawkins, S. R. Lee, J. F. Klem
Publikováno v:
AIP Advances, Vol 13, Iss 8, Pp 085106-085106-5 (2023)
Photocathodes based on GaAs and other III–V semiconductors are capable of producing highly spin-polarized electron beams. GaAs/GaAsP superlattice photocathodes exhibit high spin polarization; however, the quantum efficiency (QE) is limited to 1% or
Externí odkaz:
https://doaj.org/article/4e1babdd43a347c4a7acfe6f6ab6597e
Publikováno v:
2022 28th International Semiconductor Laser Conference (ISLC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1116f628125ad5f9cc0afa5e40a4fead
https://doi.org/10.23919/islc52947.2022.9943363
https://doi.org/10.23919/islc52947.2022.9943363
Autor:
P. Petluru, A. J. Muhowski, A. Kamboj, N. C. Mansfield, M. Bergthold, E. A. Shaner, J. F. Klem, D. Wasserman
Publikováno v:
Applied Physics Letters. 122:021101
We demonstrate a monolithic all-epitaxial resonant-cavity architecture for long-wave infrared photodetectors with substrate-side illumination. An nBn detector with an ultra-thin ([Formula: see text]) absorber layer is integrated into a leaky resonant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::021b77db4b898c8a22c1a32a34bb376d
https://doi.org/10.1063/5.0131628
https://doi.org/10.1063/5.0131628
Publikováno v:
Applied Physics Letters. 120:091105
InAs-based interband cascade lasers (ICLs) can be more easily adapted toward long wavelength operation than their GaSb counterparts. Devices made from two recent ICL wafers with an advanced waveguide structure are reported, which demonstrate improved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::350bbe6f38c86d9632ed4fb872fb79ce
https://doi.org/10.1063/5.0084565
https://doi.org/10.1063/5.0084565
Publikováno v:
Applied Physics Letters. 77:2722-2724
We investigate the transport of holes through AlAs/In0.10Ga0.90As resonant tunneling diodes which utilize InxGa1−xAs prewells in the emitter with x=0, 0.10, and 0.20. The data show an increase in peak current and bias at resonance and a concurrent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d291307ee07bca2970b7af013a43e2e9
https://doi.org/10.1063/1.1320457
https://doi.org/10.1063/1.1320457
Publikováno v:
Journal of Crystal Growth. 111:628-632
GaAsSb/InGaAs superlattices of varying thicknesses have been grown nominally lattice matched to InP and characterised by X-ray diffraction, transmission electron microscopy. Hall measurement, and photoluminescence. These structures exhibit net Hall e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0061d8c7e83505161f0a2320b82b74f
https://doi.org/10.1016/0022-0248(91)91053-d
https://doi.org/10.1016/0022-0248(91)91053-d
Publikováno v:
Applied Physics Letters. 67:2170-2172
We report a systematic study of the effective mass of two‐dimensional (2D) holes in a series of ten p‐type GaAs/In0.20Ga0.80As/GaAs quantum well structure samples. The 2D hole density and its effective mass (m*)are independently determined from S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30feffd37a5a4a9c780b07320a46340e
https://doi.org/10.1063/1.115092
https://doi.org/10.1063/1.115092
Publikováno v:
Applied Physics Letters. 60:601-603
Magnetotunneling of holes through the double‐barrier AlAs/In0.10Ga0.90As strained‐layer structure is investigated with magnetic fields up to 23 T to determine the in‐plane dispersion of the two‐dimensional subbands in the In0.10Ga0.90As quant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83cad96b12a3c2e8246253287b674fbe
https://doi.org/10.1063/1.106566
https://doi.org/10.1063/1.106566
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:2996-2998
We have investigated methods of chemical preparation and thermal treatments of InSb substrates to produce InSb surfaces suitable for subsequent molecular beam epitaxy. Etching in a solution of lactic acid: HNO3:HCl was shown to produce an oxide surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f9eb2423bbeb7af51bffd1105dc2eb1
https://doi.org/10.1116/1.577162
https://doi.org/10.1116/1.577162
Publikováno v:
Integrated Photonics Research.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e38321a946b97ac5a02682641472dabd
https://doi.org/10.1364/ipr.1996.imh6
https://doi.org/10.1364/ipr.1996.imh6