Zobrazeno 1 - 10
of 31
pro vyhledávání: '"J. F. Geisz"'
Autor:
R. M. France, J. Buencuerpo, M. Bradsby, J. F. Geisz, Y. Sun, P. Dhingra, M. L. Lee, M. A. Steiner
Publikováno v:
Journal of Applied Physics. 129:173102
A graded buffer Bragg reflector (GBBR) is a bifunctional device component that provides the reflection of a distributed Bragg reflector and the adjustable lattice constant of a compositionally graded buffer. Prior work showed that these properties ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e513c868174ab65ca78f98014e2e55f7
https://doi.org/10.1063/5.0050588
https://doi.org/10.1063/5.0050588
Autor:
J. F. Geisz, Loris Barraud, Stephanie Essig, Myles A. Steiner, Paul Stradins, Antonin Faes, Christophe Allebe, Scott Ward, Vincenzo LaSalvia, Jacques Levrat, Nicolas Badel, Bertrand Paviet-Salomon, Matthieu Despeisse, David L. Young, Christophe Ballif, Antoine Descoeudres
Publikováno v:
IEEE Journal of Photovoltaics. 6:1012-1019
Combining a Si solar cell with a high-bandgap top cell reduces the thermalization losses in the short wavelength and enables theoretical 1-sun efficiencies far over 30%. We have investigated the fabrication and optimization of Si-based tandem solar c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef703082bd661f40351f8867b5c16dec
https://doi.org/10.1109/jphotov.2016.2549746
https://doi.org/10.1109/jphotov.2016.2549746
Autor:
Michael Woodhouse, J. Scott Ward, Christophe Ballif, Loris Barraud, Christophe Allebe, Myles A. Steiner, David L. Young, Manuel Schnabel, Matthieu Despeisse, Stephanie Essig, Adele C. Tamboli, Kelsey A. W. Horowitz, Timothy Remo, Antoine Descoeudres, J. F. Geisz
Publikováno v:
Nature Energy
Today's dominant photovoltaic technologies rely on single-junction devices, which are approaching their practical efficiency limit of 25-27%. Therefore, researchers are increasingly turning to multi-junction devices, which consist of two or more stac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c1696322365d82bea2d5fc91c538c94
https://doi.org/10.1038/nenergy.2017.144
https://doi.org/10.1038/nenergy.2017.144
Publikováno v:
Progress in Photovoltaics: Research and Applications. 16:537-546
Champion concentrator cell efficiencies have surpassed 40% and now many are asking whether the efficiencies will surpass 50%. Theoretical efficiencies of >60% are described for many approaches, but there is often confusion about “the” theoretical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::701f8dc685f78271db368a893b69d01c
https://doi.org/10.1002/pip.830
https://doi.org/10.1002/pip.830
Autor:
Daniel J. Friedman, S. X. Li, Junqiao Wu, Eugene E. Haller, Sarah Kurtz, Kin Man Yu, Wladek Walukiewicz, W. Shan, Joel W. Ager, J. F. Geisz
Publikováno v:
Journal of Applied Physics. 93:2696-2699
Photomodulation spectroscopy studies of the transitions at the Γ point of the Brillouin zone of thin films of BxGa1−xAs alloys grown by metal-organic chemical-vapor deposition are presented. A very small increase of the fundamental band gap is fou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d715b58f8d5a5f5f31782b5154c4bc90
https://doi.org/10.1063/1.1540230
https://doi.org/10.1063/1.1540230
Autor:
J. F. Geisz, J. M. Olson, Robert C. Reedy, Sarah Kurtz, Brian Keyes, Daniel J. Friedman, Greg D. Barber, William E. McMahon
Publikováno v:
Journal of Crystal Growth. 234:323-326
Presented at the 2001 NCPV Program Review Meeting: Hydrazine, NF{sub 3}, dimethylhydrazine, trimethylgallium, and triethylgallium are studied for the growth of GaAs{sub 1-x}N{sub x} by metal-organic chemical-vapor deposition (MOCVD). NF{sub 3} is sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f9afe0c0e0253d9522ca68a62bbecf6
https://doi.org/10.1016/s0022-0248(01)01712-2
https://doi.org/10.1016/s0022-0248(01)01712-2
Autor:
J. M. Olson, Sarah Kurtz, Robert C. Reedy, J. F. Geisz, Daniel J. Friedman, William E. McMahon, Greg D. Barber
Publikováno v:
Journal of Crystal Growth. 234:318-322
The incorporation of nitrogen into GaAsN grown by metal-organic chemical-vapor deposition is reported as a function of growth conditions and various combinations of nitrogen and gallium precursors. For all of the precursors, the incorporation of nitr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e9e30f3d6b986b3eb757dbf75bdca87
https://doi.org/10.1016/s0022-0248(01)01711-0
https://doi.org/10.1016/s0022-0248(01)01711-0
Autor:
Wladek Walukiewicz, J. F. Geisz, Joel W. Ager, J. M. Olson, Kin Man Yu, E. E. Haller, Sarah Kurtz, H.P. Xin, W. Shan, Charles W. Tu, Daniel J. Friedman
Publikováno v:
physica status solidi (b). 223:75-85
Recent high hydrostatic pressure experiments have shown that incorporation of small amounts of nitrogen into conventional III–V compounds to form III–N–V alloys leads to splitting of the conduction band into two subbands. The downward shift of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4ea9443f76fc8e91208ea3dc9c859b5
https://doi.org/10.1002/1521-3951(200101)223:1<75::aid-pssb75>3.0.co
https://doi.org/10.1002/1521-3951(200101)223:1<75::aid-pssb75>3.0.co
Autor:
J. F. Geisz, Eugene E. Haller, J. M. Olson, Wladek Walukiewicz, Daniel J. Friedman, Sarah Kurtz, W. Shan, Joel W. Ager
Publikováno v:
Physical Review Letters. 82:1221-1224
We present evidence for a strong interaction between the conduction band and a narrow resonant band formed by nitrogen states in $\mathrm{Ga}{}_{1\ensuremath{-}x}\mathrm{In}{}_{x}\mathrm{N}{}_{y}\mathrm{As}{}_{1\ensuremath{-}y}$ alloys. The interacti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62c2986f9ff3444d2d8fcc9f67d537fc
https://doi.org/10.1103/physrevlett.82.1221
https://doi.org/10.1103/physrevlett.82.1221
Publikováno v:
Journal of Crystal Growth. 195:409-415
We demonstrate working prototypes of a GaInNAs-based solar cell lattice-matched to GaAs with photoresponse down to 1 eV. This device is intended for use as the third junction of future-generation ultrahigh-efficiency three- and four-junction devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb50f352e8bac62c29fe7f465424d186
https://doi.org/10.1016/s0022-0248(98)00561-2
https://doi.org/10.1016/s0022-0248(98)00561-2