Zobrazeno 1 - 10
of 467
pro vyhledávání: '"J. F. CARLIN"'
Autor:
K. Ji, M. Schnedler, Q. Lan, F. Zheng, Y. Wang, Y. Lu, H. Eisele, J.-F. Carlin, R. Butté, N. Grandjean, R. E. Dunin-Borkowski, Ph. Ebert
Publikováno v:
Applied Physics Express, Vol 17, Iss 1, p 016505 (2024)
Thermal healing of focused ion beam-implanted defects in GaN is investigated by off-axis electron holography in TEM. The data reveal that healing starts at temperatures as low as about 250 °C. The healing processes result in an irreversible transiti
Externí odkaz:
https://doaj.org/article/f204c5c12cdf4c88a79ea0ccbeeab7ab
Autor:
D. M. Di Paola, P. M. Walker, R. P. A. Emmanuele, A. V. Yulin, J. Ciers, Z. Zaidi, J.-F. Carlin, N. Grandjean, I. Shelykh, M. S. Skolnick, R. Butté, D. N. Krizhanovskii
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
Nonlinearity enhancement in different materials is relevant for many scientific applications. Here the authors demonstrate pulse modulation in the UV regime due to polariton-based nonlinearity in an AlInGaN waveguide structure, including at room temp
Externí odkaz:
https://doaj.org/article/42c4b078cd3f46f686bb1f85f3d96d95
Akademický článek
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Akademický článek
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Autor:
D. Rogers, Andrea Acuna, Leandro Mozzoni, Pengyin Chen, Liliana Florez-Palacios, J. F. Carlin, Chengjun Wu, M. P. Da Silva
Publikováno v:
Journal of Plant Registrations. 15:313-317
Akademický článek
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Autor:
Alessandro Caria, J.-F. Carlin, Nicolas Grandjean, C. De Santi, Mauro Mosca, Enrico Zanoni, Matteo Meneghini, F. Piva, Camille Haller, Gaudenzio Meneghesso
Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN underlayer (UL). The current working hypothesis is that the presence of the U
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9456725d3acda0c8f312bc6bfaad5101
http://hdl.handle.net/10447/441433
http://hdl.handle.net/10447/441433
Autor:
Y. Wang, Q. Lan, Holger Eisele, Raphaël Butté, Ph. Ebert, Rafal E. Dunin-Borkowski, L. Freter, Y. Lu, Nicolas Grandjean, U. Breuer, M. Schnedler, Fengshan Zheng, J.-F. Carlin
Publikováno v:
Physical review / B 102(24), 245304 (2020). doi:10.1103/PhysRevB.102.245304
We present a methodology to quantify polarization and electron affinity changes at interfaces by combining scanning tunneling spectroscopy, off-axis electron holography in transmission electron microscopy (TEM), and self-consistent calculations of th
Autor:
Raphaël Butté, Dmitry Solnyshkov, J.-F. Carlin, Guillaume Malpuech, Joachim Ciers, Y. Kuang, Nicolas Grandjean, Gordon Callsen
Publikováno v:
Physical Review B
Physical Review B, American Physical Society, 2020, 102 (15), ⟨10.1103/PhysRevB.102.155304⟩
Physical Review B, 2020, 102 (15), ⟨10.1103/PhysRevB.102.155304⟩
Physical Review B, American Physical Society, 2020, 102 (15), ⟨10.1103/PhysRevB.102.155304⟩
Physical Review B, 2020, 102 (15), ⟨10.1103/PhysRevB.102.155304⟩
International audience; Polariton lasers are mostly based on planar cavities. Here, we focus on an alternative configuration with slab waveguide modes strongly coupled to excitons confined in GaN/AlGaN quantum wells. We study experimentally and theor
Autor:
François Vurpillot, Maxime Hugues, Nicolas Grandjean, Didier Blavette, Williams Lefebvre, Noelle Gogneau, J.-F. Carlin, Ivan Blum, L. Rigutti, F. Moyon, Ludovic Largeau, E. Giraud, E. Di Russo, Jean-Michel Chauveau
Publikováno v:
Journal of Physical Chemistry C
Journal of Physical Chemistry C, 2018, 122 (29), pp.16704--16714. ⟨10.1021/acs.jpcc.8b03223⟩
Journal of Physical Chemistry C, American Chemical Society, 2018, 122 (29), pp.16704--16714. ⟨10.1021/acs.jpcc.8b03223⟩
Journal of Physical Chemistry C, 2018, 122 (29), pp.16704--16714. ⟨10.1021/acs.jpcc.8b03223⟩
Journal of Physical Chemistry C, American Chemical Society, 2018, 122 (29), pp.16704--16714. ⟨10.1021/acs.jpcc.8b03223⟩
International audience; Ternary semiconductor alloys based on the AyB1-yC stoichiometry are widely employed in electronic devices and their composition plays a key role in bandgap engineering of heterostructures. We have studied the crucial issue of