Zobrazeno 1 - 4
of 4
pro vyhledávání: '"J. F. Bohland"'
Autor:
Gary S. Calabrese, R. Sinta, B.W. Dudley, S.K. Jones, J. F. Bohland, P.W. Freeman, E. K. Pavelchek
Publikováno v:
Microelectronic Engineering. 21:231-234
SAHRTM [1–3] ( S ilylated A cid H ardened R esist) employs chemically amplified crosslinking of exposed areas and results in positive-toned features following dry development. Two undersirable characteristics of this process have been identified an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::420cac6f0302977d02acfff0835ed09c
https://doi.org/10.1016/0167-9317(93)90062-a
https://doi.org/10.1016/0167-9317(93)90062-a
Autor:
E. K. Pavelchek, G. S. Calabrese, S. M. Bobbio, J. F. Bohland, M. Gulla, L. N. Abali, P. Sricharoenchaikit
Publikováno v:
Microelectronic Engineering. 13:93-96
G-line photoresists are exposed at 248 nm and subjected to aqueous development and electroless plating to produce submicron, metallized photoresist patterns. The high plasma etch resistance of the photoresist/metal structure allows for efficient patt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a73e6b19c80c4c01951f2b7f080aa1d3
https://doi.org/10.1016/0167-9317(91)90055-i
https://doi.org/10.1016/0167-9317(91)90055-i
Publikováno v:
The Journal of Physical Chemistry. 77:1969-1971
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b5e64aa807ac0716883a2f54994a00b
https://doi.org/10.1021/j100635a009
https://doi.org/10.1021/j100635a009
Publikováno v:
SPIE Proceedings.
The combined effects of diffraction, refraction, reflection, and interference often result in the notching of photoresist lines at steps in the substrate. Dyes have been added to photoresists in order to minimize the notching problem. However, it has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e907a0ed666170d1ce0eaae41057a8d
https://doi.org/10.1117/12.947842
https://doi.org/10.1117/12.947842