Zobrazeno 1 - 5
of 5
pro vyhledávání: '"J. Educato"'
Autor:
P. Li, Mehul Naik, V. Rana, D. Cheung, Suketu A. Parikh, T. Pan, P. Hey, F. Redeker, S. Jenq, J. Educato, B. Tang, D. Yost, I. Hashim
Publikováno v:
Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).
This paper reports a comparative study of double level copper interconnects using Black Diamond (k=2.8) dielectric, fluorinated silicate glass (FSG, k=3.7) and undoped silicate glass (USG, k=4.1). A 25-28% reduction in intra-lead capacitance is reali
Publikováno v:
1998 IEEE International Integrated Reliability Workshop Final Report (Cat. No.98TH8363).
We have shown preliminary results from an exhaustive experimental program on the electromigration performance of advanced copper/low-k dielectric process sequences. Wafer-level electromigration test results have been shown to be consistent with packa
Publikováno v:
ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095).
A methodology is described where wafers with specialized test structures are inspected with wafer metrology tools to assist process development for Cu BEOL fabrication. A Cu damascene interconnect process is examined from oxide deposition to final el
Autor:
G. Dixit, J. Chen, V. Rana, A. Wang, Kapila Wijekoon, R. Cheung, Suketu A. Parikh, J. Educato, B. Zheng
Publikováno v:
Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).
The effect of annealing conditions on defects and post CMP grain size in electroplated Cu lines is discussed. We have studied the effect of these parameters on interconnect reliability by measuring the electromigration of 'via-fed' structures. A fail
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