Zobrazeno 1 - 10
of 16
pro vyhledávání: '"J. E. Zuniga-Juarez"'
Publikováno v:
Measurement. 44:1491-1498
An improved two-tier L-L method for characterizing symmetrical microwave test fixtures is introduced in this paper. The improved two-tier L-L method is implemented with two uniform transmission lines having the same characteristic impedance and propa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::072f8f8c713d752f10b95c67352e9d65
https://doi.org/10.1016/j.measurement.2011.05.013
https://doi.org/10.1016/j.measurement.2011.05.013
Autor:
A. Zarate-de Landa, José Raúl Loo-Yau, M. C. Maya-Sanchez, J. L. del Valle-Padilla, J. E. Zuniga-Juarez, J. A. Reynoso-Hernandez
Publikováno v:
IEEE Microwave Magazine. 10:100-111, 146
Heterojunction field effect transistors (HFET) based on gallium nitride (AlGaN/GaN) and metal semiconductor field effect transistors (MESFETs) based on silicon carbide (SiC) are the preferred transistors for high-power amplifier circuit designs rathe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f8ba75caca0297047180a9fc68cbab8
https://doi.org/10.1109/mmm.2008.931675
https://doi.org/10.1109/mmm.2008.931675
Autor:
M. del Carmen Maya-Sanchez, Ignacio E. Zaldivar-Huerta, R. Leal-Romero, J. A. Reynoso-Hernandez, M. Aceves-Mijares, J. E. Zuniga-Juarez
Publikováno v:
IEEE Transactions on Components and Packaging Technologies. 31:678-682
In this work, the use of silicon rich oxide (SRO) and chemical vapor deposition SiO2 double layers as passivation films of coplanar waveguides (CPW) on high resistivity silicon (HR-Si) with an N+ backside is studied. The microwave performance of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19d94e6e62e12d653b869cfc2d099e2d
https://doi.org/10.1109/tcapt.2008.922005
https://doi.org/10.1109/tcapt.2008.922005
Autor:
Juan Luis del Valle-Padilla, J. E. Zuniga-Juarez, José Raúl Loo-Yau, M. A. Pulido-Gaytan, Jaqueline Estrada-Mendoza, J. A. Reynoso-Hernandez, M. C. Maya-Sanchez
Publikováno v:
2015 IEEE MTT-S International Microwave Symposium.
The classical method for extracting the intrinsic elements of the small signal equivalent circuit of the FET is based on the knowledge of intrinsic Y ij -parameters. It requires finding the frequency range where the value of each intrinsic element is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e15e5bbb42284e3939c30af8a6915bcf
https://doi.org/10.1109/mwsym.2015.7167071
https://doi.org/10.1109/mwsym.2015.7167071
Publikováno v:
Microwave and Optical Technology Letters. 48:701-705
In this paper, the parasitic and intrinsic elements of the coplanar PHEMTs are determined from S-parameter measurements corrected using the classical LRM calibration technique and the improved LRM with a reference line of arbitrary length. For the fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08ef9bfca65449908cdfea84d5d72a9a
https://doi.org/10.1002/mop.21448
https://doi.org/10.1002/mop.21448
Autor:
A. Garcia-Osorio, M. C. Maya-Sanchez, A. Zarate-de Landa, M. A. Pulido-Gaytan, J. R. Monjardin-Lopez, D. Orozco-Navarro, J. E. Zuniga-Juarez, José Raúl Loo-Yau, J. A. Reynoso-Hernandez
Publikováno v:
81st ARFTG Microwave Measurement Conference.
Using the wave cascading matrix formalism and the 8-term error model for modeling the imperfect measurement system vector network analyzer a new approach of the Thru-Reflect-Line (TRL) calibration technique is introduced and compared with the already
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::725edce5832d7985a40afac958f12d4f
https://doi.org/10.1109/arftg.2013.6579059
https://doi.org/10.1109/arftg.2013.6579059
Publikováno v:
77th ARFTG Microwave Measurement Conference.
A novel procedure to characterize coaxial line-stretcher phase shifter based on the two-line method is presented in this work. Intrinsic losses and differential phase shift are determined using S-parameters data measured with an uncalibrated vector n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be3b1ff4f8f6a472c30adf628646f3c1
https://doi.org/10.1109/arftg77.2011.6034564
https://doi.org/10.1109/arftg77.2011.6034564
Publikováno v:
2009 IEEE MTT-S International Microwave Symposium Digest.
In this paper a straightforward method to determine the parasitic gate resistance (R g ) of GaN FET is introduced. The method uses a simple linear regression to directly determine the value of R g without prior knowledge of the Schottky diode resista
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64711733d4ad4d967f52a490e27de0c8
https://doi.org/10.1109/mwsym.2009.5165837
https://doi.org/10.1109/mwsym.2009.5165837
Publikováno v:
2009 73rd ARFTG Microwave Measurement Conference.
By using an indirect method for determining the characteristic impedance of uniform transmission lines embedded in coaxial connectors, a novel two tier L-L de-embedding method is presented. The proposed de-embedding method is suitable for S parameter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a4bb4e05ff249f430a1178ac6c47115
https://doi.org/10.1109/arftg.2009.5278073
https://doi.org/10.1109/arftg.2009.5278073
Publikováno v:
2008 IEEE MTT-S International Microwave Symposium Digest.
In this paper we present a new method for calculating the characteristic impedance of the transmission lines embedded in identical, symmetrical and reciprocal transitions. For calculating the matrix elements of the transitions as well as the characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8281265f87ef2f082f3dfa0433484f4
https://doi.org/10.1109/mwsym.2008.4633329
https://doi.org/10.1109/mwsym.2008.4633329