Zobrazeno 1 - 10
of 25
pro vyhledávání: '"J. E. Velazquez"'
Autor:
O. Castelló, Sofía M. López Baptista, K. Watanabe, T. Taniguchi, E. Diez, J. E. Velázquez-Pérez, Y. M. Meziani, J. M. Caridad, J. A. Delgado-Notario
Publikováno v:
Frontiers of Optoelectronics, Vol 17, Iss 1, Pp 1-11 (2024)
Abstract In recent years, graphene field-effect-transistors (GFETs) have demonstrated an outstanding potential for terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz appl
Externí odkaz:
https://doaj.org/article/130a1a7c85b94b91930873fb29b73e8d
Autor:
Carlos Andres Valencia-Yepes, Ana Maria Abreu-Velez, Michael S. Howard, N. R. Mesa-Herrera, Eduardo Upegui-Quiceno, J. E. Velazquez-Velez, Yulieth Alexandra Upegui-Zapata
Publikováno v:
Clinical and Experimental Dermatology. 42:874-880
SummaryBackground We identified a new variant of endemic pemphigus foliaceus in El Bagre, Colombia, South America, which we term El Bagre-EPF, and observed reactivity to arrector pili muscle (APM), thus we tested for autoimmunity to APM. Methods We t
Autor:
E. Abidi, A. Khan, J. A. Delgado-Notario, V. Clericó, J. Calvo-Gallego, T. Taniguchi, K. Watanabe, T. Otsuji, J. E. Velázquez, Y. M. Meziani
Publikováno v:
Nanomaterials, Vol 14, Iss 4, p 383 (2024)
An asymmetric dual-grating gate bilayer graphene-based field effect transistor (ADGG-GFET) with an integrated bowtie antenna was fabricated and its response as a Terahertz (THz) detector was experimentally investigated. The device was cooled down to
Externí odkaz:
https://doaj.org/article/cae406d4ba6b4a96a70e138bb38e0c61
Autor:
J. A. Delgado Notario, J. E. Velazquez, Elham Javadi, Enrique Diez, Yahya Moubarak Meziani, Kristel Fobelets
Publikováno v:
Millimetre Wave and Terahertz Sensors and Technology X.
We investigated room temperature detection of terahertz radiation by using two different types of transistors (Strained Silicon Modulation field effect transistor, GaAs PHEMT). Experimental results show a good level of response under excitation at 0.
Autor:
Enrique Diez, Deepika Yadav, Kenji Watanabe, J. E. Velazquez, Taiichi Otsuji, Takuya Taniguchi, Yahya Moubarak Meziani, J. A. Delgado Notario, Vito Clericò
Publikováno v:
2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
We report on detection of terahertz radiation by using bilayer graphene-based FET with asymmetric grating gates. The device was fabricated with a stack of h-BN/Graphene/h-BN with a back gate as well as an asymmetric dual grating top gates. It was sub
Autor:
Enrique Diez, Jaime Calvo-Gallego, J. E. Velazquez, Yahya Moubarak Meziani, Elham Javadi, J. A. Delgado Notario, Kristel Fobelets
Publikováno v:
ResearcherID
We report on room temperature non-resonant detection of terahertz radiation using strained Silicon MODFETs with nanoscale gate lengths. The devices were excited at room temperature by an electronic source at 150 and 300 GHz. A maximum intensity of th
Autor:
J. E. Velazquez, Yahya Moubarak Meziani, M. Shahabdi, Elham Javadi, Nasser Masoumi, J. A. Delgado Notario
Publikováno v:
2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz).
This paper reports on direct detection of electromagnetic radiation at 300GHz by using low cost commercially available GaAs high electron mobility field effect transistors (FETs) without any specially attached antennas. The effect of gate voltage bia
Autor:
K. Fobelets, S. L. Rumyantsev, P. W. Ding, J. E. Velazquez-Perez, Massimo Macucci, Giovanni Basso
Publikováno v:
AIP Conference Proceedings.
Screen‐Grid Field Effect Transistors (SGrFETs) are multi‐gate devices with a novel gate geometry consisting of oxide wrapped metal cylinders standing perpendicular to the current flow between source and drain. TCAD simulations show robust downsca
Enhancement of sub-terahertz detection by drain-to-source biasing on strained silicon MODFET devices
Autor:
J. A. Delgado Notario, Yahya Moubarak Meziani, J. E. Velazquez, Kristel Fobelets, S Morozov, K Maremyanin
Publikováno v:
Journal of Physics: Conference Series. 647:012007
We report on non resonant detection of sub-terahertz radiation (148-353 GHz) using strained silicon modulation field effect transistor with different gate lengths. The devices were excited at room temperature by a Backward Wave Oscillator (BWO) sourc