Zobrazeno 1 - 7
of 7
pro vyhledávání: '"J. E. Velázquez Pérez"'
Autor:
O. Castelló, Sofía M. López Baptista, K. Watanabe, T. Taniguchi, E. Diez, J. E. Velázquez-Pérez, Y. M. Meziani, J. M. Caridad, J. A. Delgado-Notario
Publikováno v:
Frontiers of Optoelectronics, Vol 17, Iss 1, Pp 1-11 (2024)
Abstract In recent years, graphene field-effect-transistors (GFETs) have demonstrated an outstanding potential for terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz appl
Externí odkaz:
https://doaj.org/article/130a1a7c85b94b91930873fb29b73e8d
Autor:
J. A. Delgado-Notario, V. Clericò, E. Diez, J. E. Velázquez-Pérez, T. Taniguchi, K. Watanabe, T. Otsuji, Y. M. Meziani
Publikováno v:
APL Photonics, Vol 5, Iss 6, Pp 066102-066102-8 (2020)
A graphene-based field-effect-transistor with asymmetric dual-grating gates was fabricated and characterized under excitation of terahertz radiation at two frequencies: 0.15 THz and 0.3 THz. The graphene sheet was encapsulated between two flakes of h
Externí odkaz:
https://doaj.org/article/81534aa23ce5451bba28a39fe004fb9d
Publikováno v:
Journal of Applied Physics. 72:2322-2330
Using a multiparticle Monte Carlo method, a theoretical analysis of the spectral density of velocity fluctuations in semiconductors has been performed, under both stationary and transient conditions (when the electric field applied to a semiconductor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27fad30c20d4981fa7df0290c4e3ac55
https://doi.org/10.1063/1.351574
https://doi.org/10.1063/1.351574
Publikováno v:
Semiconductor Science and Technology. 7:31-36
In view of the importance of InP as a new material that is especially appropriate for very high frequency applications, a Monte Carlo method has been applied to analyse its electron transport properties at very high electric fields, using a five-vall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dede5fd5326155c413688bb295f99e24
https://doi.org/10.1088/0268-1242/7/1/006
https://doi.org/10.1088/0268-1242/7/1/006
Publikováno v:
Semiconductor Science and Technology. 6:862-871
A Monte Carlo method has been developed for the study of electron transport properties (drift velocity, average energy, electron ionization coefficient, etc.) in GaAs for high fields (100-600 kV cm-1), using a five-valley conduction band model. To th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8091f91550fba68a303e71d3ab0678a5
https://doi.org/10.1088/0268-1242/6/9/005
https://doi.org/10.1088/0268-1242/6/9/005
Publikováno v:
Journal of Physics: Conference Series; Oct2015, Vol. 647 Issue 1, p1-1, 1p
Autor:
Díez, E., García, E., Sánchez-Fabrés, C., Camarasa, M., Velázquez-Pérez, J.E., Meziani, Y.M., Bellani, V., Colino, I., Rossella, F., Izard, J.
25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 3240-3242
Commercial amorphous silicon tandem cells have been thoroughly characteri
Commercial amorphous silicon tandem cells have been thoroughly characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3dea31d8e45ea914d0d80efb3f65cf7
https://hdl.handle.net/11384/14933
https://hdl.handle.net/11384/14933
