Zobrazeno 1 - 10
of 267
pro vyhledávání: '"J. E. Rowe"'
Publikováno v:
Computers and Electronics in Agriculture. 140:317-326
We propose the use of temperature-stabilized lasers to improve the accuracy of a spectral-reflectance-based plant discrimination sensor for use in selective herbicide spraying systems. The discrimination of Canola from Wild-radish is based on Normali
Autor:
Tianshuai Guan, J. E. Rowe, Harald Ade, Sean Stuart, Daniel B. Dougherty, Eliot Gann, Terry McAfee
Publikováno v:
Crystal Growth & Design. 14:4394-4401
Graphene has long been recognized as a potential replacement for indium tin oxide as a transparent conducting substrate that may not only be cheaper to manufacture but also may provide mechanical flexibility and templating for preferential organic fi
Autor:
Anthony J. Caprio, J. E. Rowe
Publikováno v:
North Carolina Medical Journal. 74:201-204
This issue of the NCMJ addresses the problem of chronic pain in North Carolina; its diagnosis and management in primary and specialty care; and the need to balance efficacy and safety when prescribing opioid medications, as these drugs are associated
Publikováno v:
Surface Science. 611:25-31
We present a novel technique of growing UHV graphene using atomic hydrogen etching of SiC(0001)–Si surfaces. Hydrogen atoms generated from a hot tungsten filament selectively etch silicon surface atoms thereby facilitating the Si-sublimation proces
Publikováno v:
Journal of Lightwave Technology. 31:822-829
We present a novel design for an optoelectronics- based real-time plant discrimination sensor, which enables a high signal-to-noise ratio, and hence a low false positive rate, to be attained. The sensor employs graded thin film coatings and a high-sp
Autor:
Ji Ung Lee, J. E. Rowe, Everett Comfort, Florence Nelson, Alain C. Diebold, Andreas Sandin, Dhiraj Prasad Sinha, Daniel B. Dougherty
Publikováno v:
ECS Transactions. 45:63-71
Graphene's importance in post-CMOS device research drives the need for a variety of metrology methods for film characterization. Chemical Vapor Deposition (CVD) on metallic foils and the thermal decomposition of SiC have become two of the dominant fa
Autor:
Patrick S. Lysaght, Hyungtak Seo, Jan Lüning, Gerald Lucovsky, S. Lee, J. E. Rowe, M. D. Ulrich, L. B. Fleming, Gennadi Bersuker
Publikováno v:
Journal of Materials Science: Materials in Electronics. 18:263-266
Dielectrics comprised of nano-crystalline HfO2 in gate stacks with thin SiO2/SiON interfacial transition regions display significant asymmetries with respect to trapping of Si substrate injected holes and electrons. Based on spectroscopic studies, an
Autor:
J. E. Rowe
Publikováno v:
Manuel Cardona ISBN: 9783319203423
I first met Manuel in September, 1965, at a faculty-student social event hosted for Brown Physics entering graduate students. I had just traveled from South Georgia with my new wife, Susie; we had a few disappointments with our new apartment in Provi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b97b730eb917331ba8cafd5f85f0fb8
https://doi.org/10.1007/978-3-319-20343-0_34
https://doi.org/10.1007/978-3-319-20343-0_34
Publikováno v:
Journal of Applied Physics. 95:982-988
We report the formation of heteroepitaxial copper phthalocyanine (CuPc) overlayers on a “5×20” reconstructed Au(001) substrate, with thicknesses ranging from 0.8 to 26.9 A. The adsorbed CuPc at room temperature forms a quasiepitaxial overlayer,
Publikováno v:
Surface Science. 544:193-208
The alloying, intermixing, growth and faceting of ruthenium overlayers on tungsten single crystals have been studied with high resolution soft X-ray photoelectron spectroscopy, SXPS, (using synchrotron radiation) and low energy electron diffraction (