Zobrazeno 1 - 7
of 7
pro vyhledávání: '"J. E. Hails"'
Autor:
R. M. Lawrence, R. S. Hall, L. Buckle, J. W. Cairns, Neil Gordon, J. E. Hails, Timothy Ashley, Andrew Graham, David J. Hall, C. Maltby, J. Giess
Publikováno v:
Applied Physics Letters. 85:2113-2115
Long-wavelength HgCdTe heterostructures on silicon (100) substrates have been grown using metal-organic vapor phase epitaxy. Test diodes have been fabricated from this material using mesa technology and flip-chip bonding. We have demonstrated excelle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e91fc02da6798e3b23faf2c00e93f1e3
https://doi.org/10.1063/1.1791740
https://doi.org/10.1063/1.1791740
Autor:
J. Giess, J. E. Hails, A. Graham, G. Blackmore, M. R. Houlton, J. Newey, M. L. Young, M. G. Astles, W. Bell, D. J. Cole-Hamilton
Publikováno v:
Journal of Electronic Materials. 24:1149-1153
It has been established that a compound present as an impurity in the propan-2-ol used in the preparation of GaAs (100) substrates for the metalorganic vapor phase epitaxy growth of (Hg,Cd)Te has a marked effect on the crystalline perfection and surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b849b3cd6afdca65aa71f25a416be087
https://doi.org/10.1007/bf02653067
https://doi.org/10.1007/bf02653067
Publikováno v:
MRS Proceedings. 280
A cross-sectional TEM study of the defect structure in CdTe buffer layers grown on 2°-off (001) GaAs substrates by MOVPE is presented. The nature and distribution of defects in the buffer layers are shown to be highly anisotropic. Images obtained wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9e36c9e42296bc2adc4da187e410c06
https://doi.org/10.1557/proc-280-425
https://doi.org/10.1557/proc-280-425
Publikováno v:
Journal of Crystal Growth. 79:940-945
Layers of Cd x Hg 1− x Te have been grown by MOVPE on CdTe substrates oriented on /t 111t B and on the planes 2° off /t 100t towards (110). Their structure has been investigated using the combined techniques of RHEED and scanning electron microsco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8235799b3b83286919928db9625b407e
https://doi.org/10.1016/0022-0248(86)90576-2
https://doi.org/10.1016/0022-0248(86)90576-2
Publikováno v:
Acta Crystallographica Section A Foundations of Crystallography. 43:70-73
Laue diffraction patterns have been recorded with synchrotron radiation for some very small crystals; in most of them the reflections are elongated radially. The Laue geometry is particularly sensitive to mosaic spread, and a relationship between mos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3577692e8d2100e6795e03c05cfc6245
https://doi.org/10.1107/s0108767387099872
https://doi.org/10.1107/s0108767387099872
Publikováno v:
Microphysics of Surfaces, Beams and Adsorbates.
A 257nm frequency doubled argon ion laser has been used to photo-dissociate Me2Cd (dimethylcadmium) together with tellurium precursors for low temperature epitaxial growth of CdTe(1). By projecting the laser onto the substrate surface, through a suit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36e97f98b43b3441cdee14fa63fe805c
https://doi.org/10.1364/msba.1989.tua2
https://doi.org/10.1364/msba.1989.tua2
Publikováno v:
Journal of Applied Physics. 60:2624-2625
Homoepitaxial layers of CdTe ranging from 0.5 to 5 μm in thickness have been grown on twin free, single‐crystal {111}A oriented CdTe substrates by metalorganic vapor phase epitaxy over the temperature range 360–440 °C. The as‐grown surfaces w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93535697d60774567813bce64bf993d2
https://doi.org/10.1063/1.337134
https://doi.org/10.1063/1.337134