Zobrazeno 1 - 10
of 28
pro vyhledávání: '"J. E. Gerbi"'
Autor:
Navneet Kumar, J. E. Gerbi, John R. Abelson, Andreas A. Polycarpou, Sreenivas Jayaraman, J. P. Chevalier, Abhishek Chatterjee, Pascal Bellon
Publikováno v:
Surface and Coatings Technology. 201:4317-4322
Transition metal diborides and their coatings offer an excellent combination of high hardness, high chemical stability and high thermal conductivity, thus they are excellent candidates for a wide range of tribological applications. In this work, stoi
Autor:
John R. Abelson, Sreenivas Jayaraman, J. E. Gerbi, Gregory S. Girolami, Do Young Kim, Pascal Bellon, Yu Yang, J. P. Chevalier, Abhishek Chatterjee
Publikováno v:
Surface and Coatings Technology. 200:6629-6633
Hard, dense and conformal hafnium diboride (HfB2) thin films were obtained by CVD from the precursor Hf[BH4]4 at deposition temperatures ≤350 °C. As-deposited films were X-ray amorphous but transformed to a nanocrystalline structure after being an
Autor:
Anirudha V. Sumant, J. E. Gerbi, Orlando Auciello, Robert W. Carpick, John A. Carlisle, David S. Grierson, Uday Lanke, J. Birrell
Publikováno v:
Advanced Materials. 17:1039-1045
Publikováno v:
Thin Solid Films. 473:41-48
We have determined the average preferred crystalline orientation of thin ultrananocrystalline diamond (UNCD) films using X-ray diffraction. The grain size and lattice parameters of the films were also calculated. We show how these characteristics cha
Autor:
J. E. Gerbi, J. M. Gibson, John A. Carlisle, Jacqueline A. Johnson, James Birrell, Orlando Auciello
Publikováno v:
Diamond and Related Materials. 14:86-92
It has long been known that by slightly altering the deposition conditions for diamond in plasma-enhanced chemical vapor deposition (PECVD), a transition from a microcrystalline to a nanocrystalline diamond morphology can be affected. The method of t
Publikováno v:
Journal of Applied Physics. 96:2232-2239
Ultrananocrystalline diamond (UNCD) films were prepared by microwave plasma chemical vapor deposition using argon-rich Ar∕CH4 plasmas at substrate temperatures from ∼400 to 800°C. Different seeding processes were employed to enhance the initial
Autor:
J. E. Gerbi, John A. Carlisle, Orlando Auciello, Horacio D. Espinosa, Bei Peng, Xingcheng Xiao, J. Birrell
Publikováno v:
Journal of Physics: Condensed Matter. 16:R539-R552
Most MEMS devices are currently based on silicon because of the available surface machining technology. However, Si has poor mechanical and tribological properties which makes it difficult to produce high performance Si based MEMS devices that could
Autor:
Orlando Auciello, Dieter M. Gruen, John A. Carlisle, J. E. Gerbi, James Birrell, J. M. Gibson
Publikováno v:
Journal of Applied Physics. 93:5606-5612
The transport properties of diamond thin films are well known to be sensitive to the sp2/sp3-bonded carbon ratio, the presence of the grain boundaries and other defects, and to the presence of various impurities. In order to clarify the roles these f
Autor:
Wei Cai, John A. Carlisle, Lloyd M. Smith, Wensha Yang, J. E. Gerbi, Tami L. Lasseter, James E. Butler, Robert J. Hamers, Orlando Auciello, Tanya Knickerbocker, John N. Russell, Dieter M. Gruen
Publikováno v:
Nature Materials. 1:253-257
Diamond, because of its electrical and chemical properties, may be a suitable material for integrated sensing and signal processing. But methods to control chemical or biological modifications on diamond surfaces have not been established. Here, we s
Publikováno v:
Journal of Non-Crystalline Solids. :45-52
Using fluctuation electron microscopy, we have measured the medium-range order of magnetron sputtered silicon thin films as a function of substrate temperature from the amorphous to polycrystalline regimes. We find a smooth increase in the medium-ran