Zobrazeno 1 - 10
of 31
pro vyhledávání: '"J. E. Bonnet"'
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :155-160
We have examined, using angular scanned photoelectron diffraction (PED), the effect of the saturation of dangling bonds of Si(1 1 1) surfaces with atomic As on the Ag thin films growth. The intensity variation of the Ag 3d core-level was monitorised
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05069a4c81ead7c85b2f8183e072f15f
https://doi.org/10.1016/j.elspec.2004.02.168
https://doi.org/10.1016/j.elspec.2004.02.168
Autor:
J. E. Bonnet, Daniel Paget, A.S. Terekhov, Oleg E. Tereshchenko, P. Chiaradia, R. Belkhou, A. Taleb-Ibrahimi
Publikováno v:
Surface Science. :411-416
In the present work HCl–propanol treated and vacuum annealed GaAs(1 0 0) surfaces were studied by means of soft X-ray photoemission and reflectance anisotropy spectroscopies (SXPS, RAS). On the as-treated surface, As 3d and Ga 3d core level spectra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57b56cb747ef06c2b2db59038ff375e7
https://doi.org/10.1016/s0039-6028(02)01279-7
https://doi.org/10.1016/s0039-6028(02)01279-7
Publikováno v:
Surface Review and Letters. :167-173
The As-terminated Si surface has an ideally flat monolayer of As atoms at the outermost layer, showing a nonreconstructed (1×1) symmetry with one extra valence electron on each As atom, and setting a passivation, on the silicon surface, remarkable f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bc95760637d2aa7a2467c37b7ca9e99
https://doi.org/10.1142/s0218625x00000221
https://doi.org/10.1142/s0218625x00000221
Autor:
V. L. Berkovits, V. M. Lantratov, V. P. Ulin, Daniel Paget, P. Chiaradia, T. V. L’vova, J. E. Bonnet
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:2528-2538
We demonstrate a new approach to study semiconductor surface passivation. This approach, which we have applied to the case of GaAs(100) passivation by sodium sulfide water solutions, consists of using both reflectance anisotropy spectroscopy during p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::655d7ecfadd81244871b0236319999de
https://doi.org/10.1116/1.581377
https://doi.org/10.1116/1.581377
Autor:
G. Le Lay, V. Yu. Aristov, J. E. Bonnet, J. Osvald, Patrick Soukiassian, K. Hricovini, O. Olsson
Publikováno v:
Europhysics Letters (EPL). 26:359-364
The room temperature deposition of small amounts of Cs on the InAs(110) surface induces the highest Fermi-level pinning position (~ 0.6 eV) above the conduction band minimum ever met for any semiconductor. The Fermi-level movement is monitored by cor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e64a70b0569bf15b0dc974127fcae211
https://doi.org/10.1209/0295-5075/26/5/007
https://doi.org/10.1209/0295-5075/26/5/007
Autor:
K.M. Schirm, Yves Borensztein, G.S. Dong, J. E. Bonnet, S. Nishigaki, K. Hricovini, Patrick Soukiassian
Publikováno v:
Applied Surface Science. 68:433-438
The effect of alkali-metal overlayers (K, Cs) on the room-temperature oxidation of the Ge (100)2 × 1 surface in the presence of molecular oxygen was investigated by core-level and valence-band photoemission spectroscopy using synchrotron radiation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11c1ee90c3d8e1f2d9011cd6a5d52d96
https://doi.org/10.1016/0169-4332(93)90265-d
https://doi.org/10.1016/0169-4332(93)90265-d
Autor:
K. Hricovini, Paul Dumas, Amina Taleb-Ibrahimi, Steven G. Louie, G. Indlekofer, J. E. Bonnet, Xuejun Zhu, Xavier Blase, P. Thiry, Y. Petroff, Yves J. Chabal, R. Gunther, Paul Thiry
Publikováno v:
Physical Review Letters. 70:1992-1995
The valence and core level spectra of chemically prepared, ideally H-terminated Si(111) surfaces are characterized by remarkably sharp features. The valence band levels and their dispersion are well described by first-principles calculations using a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a91eb39dcc65c70c1fab89859811448
https://doi.org/10.1103/physrevlett.70.1992
https://doi.org/10.1103/physrevlett.70.1992
Autor:
R. Pinchaux, J. E. Bonnet, Y. Marfaing, P. Martin, Robert Triboulet, A. Marbeuf, K. Hricovini, Dominique Ballutaud
Publikováno v:
Journal of Crystal Growth. 117:197-202
Angle-resolved photoemission spectroscopy has been used to study the valence band structure of the Zn0.15Hg0.85Te alloy. Data were collected for emission along the normal to the cleaved (110) face of these crystals as a function of UV photon energy i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09935a4acc838ea2e2c57d99a40796f9
https://doi.org/10.1016/0022-0248(92)90744-4
https://doi.org/10.1016/0022-0248(92)90744-4
Publikováno v:
Applied Surface Science. :259-263
We have studied the development of Schottky barrier heights during the initial formation of Bi/Si(100) and Bi(111) interfaces. In the submonolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e06635191fca8ae02aa810f0984db83d
https://doi.org/10.1016/0169-4332(92)90244-r
https://doi.org/10.1016/0169-4332(92)90244-r
Publikováno v:
Physica Scripta. :261-267
Unreactive metal-semiconductor systems are scarce but may serve as prototypes to understand the initial stages of the formation of Schottky barriers; they may provide a good medium in which to study coverage dependent structural arrangements, bonding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::074a19cdb67ef2dd8ade9396cc55eccd
https://doi.org/10.1088/0031-8949/1991/t35/052
https://doi.org/10.1088/0031-8949/1991/t35/052