Zobrazeno 1 - 6
of 6
pro vyhledávání: '"J. E. Bisberg"'
Publikováno v:
Journal of Applied Physics. 67:1347-1351
Zinc was diffused into GaAs, Al0.38Ga0.62As, and GaAs0.6P0.4 using a 2000–3000‐A‐thick yttria‐stabilized cubic‐zirconia (YSZ) protection layer to produce planar p‐n junctions. The YSZ layer greatly reduced thermal decomposition of the sem
Publikováno v:
50th Annual Device Research Conference.
Summary form only given. Reliable operation of InGaAs quantum-well strained-layer single-mode ridge waveguide lasers at 100 mW has been achieved. A separate-confinement, In/sub 0.2/Ga/sub 0.8/As single-quantum-well heterostructure was grown by metal-
Autor:
J. E. Bisberg, L. S. Heath, J. H. Zarrabi, Aland K. Chin, P. Gavrilovic, M. Wober, Kathleen Meehan
Publikováno v:
Applied Physics Letters. 62:1869-1871
Reliable, single‐mode, 100 mW operation of strained‐layer InGaAs single quantum well ridge waveguide lasers is demonstrated. The mean time to failure of coated, 5 μm wide lasers aged at constant current is over 100 000 h at 25 °C. Peak output p
Autor:
J. E. Bisberg, Leo M. F. Chirovsky, Simon R. Prakash, Michael D. Lange, Larry R. Thompson, T. Hudson, Andrew W. Jackson, David W. Kisker, James G. Beltran, Ryan L. Naone, John Wasserbauer, David Galt
Publikováno v:
Vertical-Cavity Surface-Emitting Lasers V.
High bit rate communication links are placing increasing demands on the performance and cost of semiconductor laser diodes. VCSELs are uniquely suited to meeting the requirements of 10 Gb/s and higher applications. The laser requirements include high
Publikováno v:
Journal of Applied Physics. 69:7898-7900
A two‐step, open‐tube diffusion process has been developed to form p +‐p‐n junctions in GaAs. n‐type GaAs substrates were zinc diffused at 550 °C to form a p + layer, capped with thermally deposited silicon nitride, and annealed in an open
Publikováno v:
Applied Physics Letters. 53:1729-1731
Diffusion of zinc into GaAs through an yttria‐stabilized cubic zirconia (YSZ) passivation layer has been demonstrated with an open‐tube diffusion method. Pure zinc or GaAs/Zn2As3 sources produced high quality planar p‐n junctions. The YSZ layer