Zobrazeno 1 - 10
of 19
pro vyhledávání: '"J. E. Bisberg"'
Publikováno v:
Journal of Applied Physics. 67:1347-1351
Zinc was diffused into GaAs, Al0.38Ga0.62As, and GaAs0.6P0.4 using a 2000–3000‐A‐thick yttria‐stabilized cubic‐zirconia (YSZ) protection layer to produce planar p‐n junctions. The YSZ layer greatly reduced thermal decomposition of the sem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41abaaca40c8bd33cd4b5a58cb660fe8
https://doi.org/10.1063/1.345688
https://doi.org/10.1063/1.345688
Publikováno v:
50th Annual Device Research Conference.
Summary form only given. Reliable operation of InGaAs quantum-well strained-layer single-mode ridge waveguide lasers at 100 mW has been achieved. A separate-confinement, In/sub 0.2/Ga/sub 0.8/As single-quantum-well heterostructure was grown by metal-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d385ce03361920bf3307b140ca7cb974
https://doi.org/10.1109/drc.1992.671890
https://doi.org/10.1109/drc.1992.671890
Autor:
J. E. Bisberg, L. S. Heath, J. H. Zarrabi, Aland K. Chin, P. Gavrilovic, M. Wober, Kathleen Meehan
Publikováno v:
Applied Physics Letters. 62:1869-1871
Reliable, single‐mode, 100 mW operation of strained‐layer InGaAs single quantum well ridge waveguide lasers is demonstrated. The mean time to failure of coated, 5 μm wide lasers aged at constant current is over 100 000 h at 25 °C. Peak output p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e1d52705cb36a6a76ef20b0795adf5a
https://doi.org/10.1063/1.109527
https://doi.org/10.1063/1.109527
Autor:
J. E. Bisberg, Leo M. F. Chirovsky, Simon R. Prakash, Michael D. Lange, Larry R. Thompson, T. Hudson, Andrew W. Jackson, David W. Kisker, James G. Beltran, Ryan L. Naone, John Wasserbauer, David Galt
Publikováno v:
Vertical-Cavity Surface-Emitting Lasers V.
High bit rate communication links are placing increasing demands on the performance and cost of semiconductor laser diodes. VCSELs are uniquely suited to meeting the requirements of 10 Gb/s and higher applications. The laser requirements include high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9b15f9257bcb10c933f9267d1639145
https://doi.org/10.1117/12.424793
https://doi.org/10.1117/12.424793
Publikováno v:
Journal of Applied Physics. 69:7898-7900
A two‐step, open‐tube diffusion process has been developed to form p +‐p‐n junctions in GaAs. n‐type GaAs substrates were zinc diffused at 550 °C to form a p + layer, capped with thermally deposited silicon nitride, and annealed in an open
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aeb160c4616371400b84ddb22fea66c
https://doi.org/10.1063/1.347475
https://doi.org/10.1063/1.347475
Publikováno v:
Applied Physics Letters. 53:1729-1731
Diffusion of zinc into GaAs through an yttria‐stabilized cubic zirconia (YSZ) passivation layer has been demonstrated with an open‐tube diffusion method. Pure zinc or GaAs/Zn2As3 sources produced high quality planar p‐n junctions. The YSZ layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef04420e18c88e5e3653736d44600f8c
https://doi.org/10.1063/1.99808
https://doi.org/10.1063/1.99808
Publikováno v:
Journal of Applied Physics; 11/1/1993, Vol. 74 Issue 9, p5493, 8p, 6 Graphs
Publikováno v:
Journal of Applied Physics; 6/1/1991, Vol. 69 Issue 11, p7898, 3p, 4 Graphs
Autor:
Wang, J. S., Hsiao, R. S., Lin, G., Wei, L., Wu, Y. T., Kovsh, A. R., Maleev, N. A., Sakharov, A. V., Livshits, D. A., Chen, J. F., Chi, J. Y.
Publikováno v:
Physica Status Solidi (C); 2003, Vol. 0 Issue 4, p1339-1342, 4p
Publikováno v:
IEEE Transactions on Electron Devices; 1992, Vol. 39 Issue 11, pN.PAG, 46p