Zobrazeno 1 - 10
of 63
pro vyhledávání: '"J. Dzuba"'
Thermo-mechanical analysis of uncooled La0.67Sr0.33MnO3 microbolometer made on circular SOI membrane
Autor:
J. Dzuba, Tibor Lalinský, P. Lobotka, Gabriel Vanko, Vladimír Kutiš, Gabriel Gálik, Stefan Chromik, J. Paulech, M. Držík
Publikováno v:
Sensors and Actuators A: Physical. 265:321-328
We report on thermal and mechanical analysis of uncooled antenna-coupled La0.67Sr0.33MnO3 microbolometer made on circular SOI (Silicon On Insulator) membrane with no limitation in its active area (circular membrane with diameter up to 2 500 μm). A s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75ef842fe48eb57117a3a233ce8ae517
https://doi.org/10.1016/j.sna.2017.08.024
https://doi.org/10.1016/j.sna.2017.08.024
Autor:
Andrej Vincze, Tibor Lalinský, J. Dzuba, Gabriel Vanko, Oleg Babchenko, Tibor Ižák, Marian Vojs
Publikováno v:
Applied Surface Science. 395:92-97
We report on the investigation of low temperature (300 °C) hydrogen plasma treatment influence on the AlGaN/GaN heterostructures. This issue was raised in the frame of study on processes related to hybrid integration of diamond with GaN-based device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d96db06f43d503401ed65e4bb7385177
https://doi.org/10.1016/j.apsusc.2016.06.105
https://doi.org/10.1016/j.apsusc.2016.06.105
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 15, Iss 3, Pp 561-568 (2017)
We demonstrate that diaphragms for sensor applications can be fabricated by laser ablation in a~variety of substrates such as ceramics, glass, sapphire or SiC. However, ablation can cause pinholes in membranes made of SiC, Si and metals. Our experime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f8adb397a3d4da721596eaff1ec7597
http://advances.utc.sk/index.php/AEEE/article/view/2033
http://advances.utc.sk/index.php/AEEE/article/view/2033
Publikováno v:
Materials & Design, Vol 106, Iss, Pp 305-312 (2016)
In this study, we present a complex methodology for evaluation of the thermally induced stress in patterned diamond microstructures. The diamond strips (2 mm in width and 0.78 or 2.8 μm in thickness) were selectively grown on AlGaN/GaN heterostructu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eebfa10f592f8a7e7b0a9f2edfc0a9b8
http://www.sciencedirect.com/science/article/pii/S0264127516307572
http://www.sciencedirect.com/science/article/pii/S0264127516307572
Publikováno v:
Microsystem Technologies. 22:1883-1892
AlGaN/GaN-based high electron mobility transistors (HEMTs), Schottky diodes and/or resistors have been presented as sensing devices for mechanical or chemical sensors operating in extreme conditions. Creation of appropriate diaphragms and/or cantilev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::973f0c404c0100857b81b5a07e7b6e1c
https://doi.org/10.1007/s00542-016-2887-2
https://doi.org/10.1007/s00542-016-2887-2
Autor:
Vladimír Kutiš, M. Držík, Juraj Paulech, Gabriel Gálik, Gabriel Vanko, J. Dzuba, P. Lobotka, Tibor Lalinský, Stefan Chromik
Publikováno v:
Procedia Engineering. 168:733-736
We report on thermal analysis of uncooled antenna-coupled La 0.67 Sr 0.33 MnO 3 microbolometer made on circular SOI membrane with no limitation in its active area (circular membrane with diameter up to 2 500 μm). A simple method how to investigate t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0502457f2162ecc80ca6ad424d7ccbe
Publikováno v:
Key Engineering Materials. 605:491-494
In this article we demonstrate the high sensitivity AlGaN/GaN circular HEMT (C-HEMT) hydrogen gas sensor with new gate interfacial Pt/NiO layer. The wide band-gap III-nitride semiconductor heterostructure allows the sensor operation at elevated tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7072a8f4e1b9002c61657d493cb0953
https://doi.org/10.4028/www.scientific.net/kem.605.491
https://doi.org/10.4028/www.scientific.net/kem.605.491
Publikováno v:
Key Engineering Materials. 605:404-407
A circular high electron mobility transistor (C-HEMT) prepared on the AlGaN/GaN membrane surface has been investigated and its potential for pressure sensing has been already demonstrated. The key issue in the design process of such heterostructure b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a6adccae5d3430671920e230ab8bd33
https://doi.org/10.4028/www.scientific.net/kem.605.404
https://doi.org/10.4028/www.scientific.net/kem.605.404
Autor:
Tibor Lalinský, Edmund Dobročka, J. Osvald, J. Dzuba, M. Vallo, Ivan Rýger, Andrej Vincze, Gabriel Vanko
Publikováno v:
Applied Surface Science. 283:160-167
We report on a high temperature forming of iridium oxides (IrO 2 ) gates of circular AlGaN/GaN high electron mobility transistors (C-HEMTs) to be predetermined for high temperature applications. IrO 2 gate interfacial layer is formed by high temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e040341e7cbf3803e71b808c0bec1725
https://doi.org/10.1016/j.apsusc.2013.06.069
https://doi.org/10.1016/j.apsusc.2013.06.069
Autor:
M. Vallo, Gabriel Vanko, P. Hudek, Johann Zehetner, Tibor Lalinský, P. Choleva, J. Dzuba, Vladimír Kutiš, Ivan Rýger
Publikováno v:
Microelectronic Engineering. 110:260-264
We present a non-conventional bulk micromachining process of SiC substrate directed to fabrication of MEMS sensors based on III-nitrides (III-N) material systems for harsh environment. They consist of AlGaN/GaN/SiC high electron mobility transistors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67e76b56cd5737a6e2d728ac04c13333
https://doi.org/10.1016/j.mee.2013.01.046
https://doi.org/10.1016/j.mee.2013.01.046