Zobrazeno 1 - 10
of 156
pro vyhledávání: '"J. Dixmier"'
Autor:
(Dijon), J. Dixmier
Publikováno v:
Annals of Mathematics, 1954 Mar 01. 59(2), 279-286.
Externí odkaz:
https://www.jstor.org/stable/1969692
Akademický článek
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Autor:
J. Dixmier
This book is a course in general topology, intended for students in the first year of the second cycle (in other words, students in their third univer sity year). The course was taught during the first semester of the 1979-80 academic year (three h
Autor:
R. Moudni, B. Doucey, M. Cuniot, M. Rommeluére, F. Ténégal, J. Dixmier, D. Imhoff, Jean-Eric Bourée
Publikováno v:
Journal of Materials Science. 37:2737-2745
Non hydrogenated a-SiCN films have been prepared by Radio Frequency (RF)reactive sputtering of a SiC target in an Ar + N2 plasma. The N content has been varied from 0 to 66 at.% of the sample composition. The structural and chemical orders have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcc5c5dab285357ff2bed8249ec69f4e
https://doi.org/10.1023/a:1015877302156
https://doi.org/10.1023/a:1015877302156
Publikováno v:
Solid State Communications. 111:293-298
Plasma deposited polymer-like amorphous carbon (PLC) films show a strong photoluminescence (PL) in the visible range at room temperature. However, the origin of the luminescence in terms of microstructure is poorly understood. In this study, by varyi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a87e7677ee45a786eb27dc6ba656b771
https://doi.org/10.1016/s0038-1098(99)00216-1
https://doi.org/10.1016/s0038-1098(99)00216-1
Publikováno v:
Solid State Communications. 110:315-319
Structural inhomogeneities in amorphous silicon layers, prepared by r.f. magnetron sputtering, were detected and characterized by X-ray diffraction (XRD) and Raman scattering using samples either as-deposited or post-annealed at increasing temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c74fd5aff08aba73212c6fcbd58557b1
https://doi.org/10.1016/s0038-1098(99)00078-2
https://doi.org/10.1016/s0038-1098(99)00078-2
Publikováno v:
Philosophical Magazine A. 78:803-817
The transition from the amorphous to the crystalline state has been followed by coupled X-ray and neutron wide-angle diffraction in silicon carbonitrides powders prepared by laser pyrolysis of hexamethyldisilazane. The short-range order (SRO) and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25ea611b64832c49b00f98c547c1dbed
https://doi.org/10.1080/01418619808239957
https://doi.org/10.1080/01418619808239957
Publikováno v:
Journal of Non-Crystalline Solids. :906-910
Microcrystalline silicon ( μ c-Si) layers have been obtained by thermal annealing of amorphous films prepared by radio frequency (r.f.) magnetron sputtering. X-ray diffraction (XRD) and Raman spectra were measured. A systematic effect has been obser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc6c332c503734a7ae2ed05cb576825c
https://doi.org/10.1016/s0022-3093(98)00222-1
https://doi.org/10.1016/s0022-3093(98)00222-1
Publikováno v:
The European Physical Journal Applied Physics. 1:301-304
We have studied the effect of the deposition conditions on the hydrogen incorporation modes and content and their effects on the optoelectronic properties of three different series of a-Si:H films prepared by R.F. magnetron sputtering at high substra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b5ff3d21d6ddcecf52d8b57c753d01e
https://doi.org/10.1051/epjap:1998150
https://doi.org/10.1051/epjap:1998150
Publikováno v:
Journal of Applied Physics. 81:3073-3080
The effects of the deposition parameters on configurations and stability of hydrogen (deuterium) in amorphous sputtered silicon a-Si:H have been analyzed using Fourier transformed infrared absorption spectroscopy, deuterium effusion experiments, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea888784d51e33dea8ba246f16e52af5
https://doi.org/10.1063/1.364321
https://doi.org/10.1063/1.364321