Zobrazeno 1 - 10
of 64
pro vyhledávání: '"J. Dangla"'
Publikováno v:
Solid-State Electronics. 38:1667-1674
This paper reviews the different specifications required for a high yield and low cost epitaxial process of heterojunction bipolar transistor (HBT) structures on GaAs and InP substrate. For these two semiconductor systems, it is shown that arsenide/p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14bea52163f8f9ffb239d590e729cbb3
https://doi.org/10.1016/0038-1101(95)00048-x
https://doi.org/10.1016/0038-1101(95)00048-x
Publikováno v:
IEEE Transactions on Electron Devices. 41:2000-2005
Noise measurements both on transmission line model (TLM) test structures and on associated HBT's are presented. Contact noise is proved to be negligible in the TLM's related to the base structure of transistors. A Hooge parameter for p/sup ++/ doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52c5865ea5ce92bc7c189eca25d77946
https://doi.org/10.1109/16.333817
https://doi.org/10.1109/16.333817
Publikováno v:
IEEE Transactions on Electron Devices. 39:767-770
In this study, the increase of V/III flux ratio combined with a low growth temperature has been found to lead to a drastic improvement of the HBT current gain, and also to avoid the base dopant (Be) diffusion during high post-growth process annealing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::750012c0ec89db25f971902598aa2a0d
https://doi.org/10.1109/16.127463
https://doi.org/10.1109/16.127463
Publikováno v:
[1992] Proceedings of the 35th Midwest Symposium on Circuits and Systems.
In many cases the characterization of semiconductor devices in terms of their technological and geometric parameters is more important for process analysis and device design optimization than that in terms of electrical parameters. The authors presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c6fa444626c5f4fc1658208d350a0a1
https://doi.org/10.1109/mwscas.1992.271375
https://doi.org/10.1109/mwscas.1992.271375
Publikováno v:
1992 IEEE Microwave Symposium Digest MTT-S.
A simple method for the determination of the two-port noise parameters is presented. It is a weighted least squares regression, where the weights are a function of the measurement uncertainties. This method fits the best minimum noise figure and nois
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0bd01a8f658cb930fe487aec9219b0
https://doi.org/10.1109/mwsym.1992.188316
https://doi.org/10.1109/mwsym.1992.188316
Publikováno v:
Electronics Letters. 29:903-905
GaAs/GaInP heterojunction bipolar transistors grown by chemical beam epitaxy with highly Be-doped base layers have been found to be stable under electrical stress. The devices did not exhibit any DC current gain change when operated at a collector cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c16aa54c05bc5c49b7126bad76ada323
https://doi.org/10.1049/el:19930603
https://doi.org/10.1049/el:19930603
Publikováno v:
AIP Conference Proceedings.
Low‐frequency noise measurements on GaAlAs/GaAs Heterojunction Bipolar Transistors are reported Noise spectra exhibit excess noise composed of 1/f noise and several generation‐recombination (g‐r) levels. To try to localize and identify noise so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2edb909247e5f80539cdf8fed327887
https://doi.org/10.1063/1.44552
https://doi.org/10.1063/1.44552
Publikováno v:
Electronics Letters
Electronics Letters, IET, 1990, 26 (14), pp.1061. ⟨10.1049/el:19900687⟩
Electronics Letters, IET, 1990, 26 (14), pp.1061. ⟨10.1049/el:19900687⟩
The emitter base threshold voltage is found to be a very efficient method of characterising p-type dopant diffusion in highly doped heterojunction bipolar transistors. Simulated curves have been successfully used to determine the amount of diffusion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c7f29b60655298aeadc5ed9b63094b0
https://hal.archives-ouvertes.fr/hal-02442196
https://hal.archives-ouvertes.fr/hal-02442196
Autor:
R. Bourguiga, J. Dangla, F. Alexandre, J.L. Benchimol, Chantal Dubon-Chevallier, F. Heliot, V. Amarger
Publikováno v:
Electronics Letters. 28:2308-2309
An innovative passivated heterojunction bipolar transistor structure, which enables with the same technological step both base surface passivation and emitter selective etching to be obtained, is reported. This new structure employs an emitter compri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb202799f54975bc5b51e31724ca6cbf
https://doi.org/10.1049/el:19921485
https://doi.org/10.1049/el:19921485
Publikováno v:
Electronics Letters. 32:231
A transmitter module has been developed for 1.5 /spl mu/m 10 Gbit/s optical transmission systems, which uses the direct modulation of a multiquantum well DFB laser diode. The laser driver circuit has been designed to use a 50 GHz baseline HBT GaInP/G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a8bc4122463e803735be85e3bf50f0f
https://doi.org/10.1049/el:19960166
https://doi.org/10.1049/el:19960166