Monolithic integration of GaAs p–i–n photodetectors grown on 300 mm silicon wafers

Autor: H. Mehdi, M. Martin, S. David, J. M. Hartmann, J. Moeyaert, M. L. Touraton, C. Jany, L. Virot, J. Da Fonseca, J. Coignus, D. Blachier, T. Baron

Publikováno v: AIP Advances, Vol 10, Iss 12, Pp 125204-125204-6 (2020)

Vertical GaAs p–i–n photodetectors epitaxially grown on GaAs(001), Ge/Si(001), and Si(001) substrates are reported. The performances of such photodetectors were investigated as a function of threading dislocation density in the stacks. A low dark

Externí odkaz: https://doaj.org/article/a299e05da93a4988ae3745c8e7d0fe9a

40GBaud PAM4 silicon Mach-Zehnder modulator boosted by a heterogeneously integrated SOA with 10dB-gain

Autor: S. Menezo, Z. Yong, K. Froberger, T. Thiessen, J. C.C. Mak, F. Denis-le Coarer, M. Peyrou, L. Milord, J. Da Fonseca, C. Jany, P. Grosse, F. Mazur, J. K. S. Poon

Publikováno v: Optical Fiber Communication Conference (OFC) 2022.

We report a silicon IQ modulator integrated with a III-V/Si semiconductor optical amplifier (SOA) at the output. We demonstrate 40GBaud PAM4 operation of one of the Mach Zehnder modulators with an SOA gain of 10dB.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0add6221f905b62c8041a3f4d0cce8d4
https://doi.org/10.1364/ofc.2022.th3c.2

Monolithically integrated InGaAs/AlGaAs multiple quantum well photodetectors on 300 mm Si wafers

Autor: Léopold Virot, Mickael Martin, Christophe Licitra, J. Da Fonseca, P. Gaillard, Christophe Jany, J. Coignus, J.M. Hartmann, Thierry Baron, J. Moeyaert, Hussein Mehdi, Charles Leroux, Bassem Salem

Publikováno v: AIP Advances
AIP Advances, American Institute of Physics-AIP Publishing LLC, 2021, 11 (8), pp.085028. ⟨10.1063/5.0059237⟩
AIP Advances, Vol 11, Iss 8, Pp 085028-085028-7 (2021)
AIP Advances, 2021, 11 (8), pp.085028. ⟨10.1063/5.0059237⟩

Near infrared light detection is fundamental for sensing in various application fields. In this paper, we detail the properties of InGaAs/AlGaAs multiple quantum well (MQW) photodetectors (PDs) monolithically integrated by direct epitaxy on 300 mm Si

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20530fb56580d0422a0a7005c4ce3a24
https://hal.univ-grenoble-alpes.fr/hal-03449032

Back-side-on-BOX heterogeneous laser integration for fully integrated photonic circuits on silicon

Autor: Torrey Thiessen, G. El-Zammar, Pierre Brianceau, Joyce K. S. Poon, J. Da Fonseca, Sylvie Menezo, Jason C. C. Mak, Bertrand Szelag, Christophe Jany

Publikováno v: 45th European Conference on Optical Communication (ECOC 2019)
Scopus-Elsevier

We present a fabrication flow integrating lasers at the backside of silicon-on-insulator wafers. It is expected to be compatible with integration of other material-layers and reduce the variance of lasers performance. A DFB laser fabricated according

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c50077daa85066dbc72971a8099dc7ef
https://hdl.handle.net/21.11116/0000-0008-2266-F21.11116/0000-0008-2268-D

Monolithic integration of GaAs p–i–n photodetectors grown on 300 mm silicon wafers

Autor: Christophe Jany, Sylvain David, Mickael Martin, J.M. Hartmann, D. Blachier, Hussein Mehdi, J. Da Fonseca, J. Moeyaert, M. L. Touraton, Thierry Baron, J. Coignus, Léopold Virot

Publikováno v: AIP Advances, Vol 10, Iss 12, Pp 125204-125204-6 (2020)
AIP Advances
AIP Advances, 2020, 10 (12), pp.125204. ⟨10.1063/5.0030677⟩

Vertical GaAs p–i–n photodetectors epitaxially grown on GaAs(001), Ge/Si(001), and Si(001) substrates are reported. The performances of such photodetectors were investigated as a function of threading dislocation density in the stacks. A low dark

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e9daf3f7525a02d55bcb77f102d6e5b
https://doi.org/10.1063/5.0030677