Zobrazeno 1 - 6
of 6
pro vyhledávání: '"J. D. Leighton"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 4:14-20
The steady-state temperature distribution and gas flow patterns in a rapid thermal processing system are calculated numerically for various process conditions. The results are verified by comparison to experimental epitaxial growth rate data. The gas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9771817c5674899436b713052fd8c9af
https://doi.org/10.1109/66.75859
https://doi.org/10.1109/66.75859
Publikováno v:
International Technical Digest on Electron Devices.
Two-dimensional simulation of a rapid thermal processing (RTP) reactor is used to determine the radiative heating and the radiative and convective cooling. The gas flow patterns are found to be a strong function of temperature. Edge losses dominate t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a6ccf334af3d7091c11a1b864114a82
https://doi.org/10.1109/iedm.1990.237012
https://doi.org/10.1109/iedm.1990.237012
Publikováno v:
Applied Physics Letters. 61:1676-1678
In this letter we detail the effects of arsine on Ge1−xSix growth rate and doping. We have observed for the first time that the growth process is no longer well described by a simple first‐order reaction. The growth‐rate data instead are consis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e65027cd3efb18f4a793e0def4170525
https://doi.org/10.1063/1.108448
https://doi.org/10.1063/1.108448
Publikováno v:
MRS Proceedings. 224
A numerical model has been created for a Rapid Thermal Processing (RTP) system. Experiments have been done to show the validity of the model. The simulations done examine thermal uniformity and stresses incurred by RTP during steady state operation a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b597c8be36eb896eb84a2a482aab5ae6
https://doi.org/10.1557/proc-224-203
https://doi.org/10.1557/proc-224-203
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:1129
The effects of diborane and arsine on GexSi1−x growth rate and doping were studied in this paper. Dilute flows of diborane increased the growth rate, but had little effect on the activation energy. The growth rate of undoped films was increased lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc160373f47e80c6e812715a5d7802db
https://doi.org/10.1116/1.586826
https://doi.org/10.1116/1.586826
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7:1080
A new technique has been developed for the growth of epitaxial silicon layers thin enough to be used as active regions of highly scaled transistors. The method, referred to as rapid thermal vapor phase epitaxy, is an extension of standard dichlorosil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::753453f04abbac8ad471664adb7162ad
https://doi.org/10.1116/1.584554
https://doi.org/10.1116/1.584554