Zobrazeno 1 - 2
of 2
pro vyhledávání: '"J. D. LaRose"'
Autor:
E. Bersch, J. D. LaRose, I. Wells, S. Consiglio, R. D. Clark, G. J. Leusink, R. J. Matyi, A. C. Diebold, David G. Seiler, Alain C. Diebold, Robert McDonald, Amal Chabli, Erik M. Secula
Publikováno v:
AIP Conference Proceedings.
In order to continue scaling metal oxide semiconductor field effect transistors (MOSFETs) with HfO2 gate oxides, efforts are being made to further improve the deposited high‐k film properties. Recently, a process whereby an HfO2 film is deposited t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e9ba19e7decefbefb1cece11e58696e
https://doi.org/10.1063/1.3657882
https://doi.org/10.1063/1.3657882
Autor:
J. D. LaRose, M. Huang, E. Bersch, M. Di, A. C. Diebold, S. Consiglio, R. D. Clark, G. J. Leusink, Erik M. Secula, David G. Seiler, Rajinder P. Khosla, Dan Herr, C. Michael Garner, Robert McDonald, Alain C. Diebold
Publikováno v:
AIP Conference Proceedings.
Rutherford backscattering spectroscopy (RBS) has been an important analytical method for determination of the depth distribution of elemental concentrations in materials. The depth resolution of RBS is typically limited by the energy resolution of io
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4ca5cfa2a6765c64ddb3bd9873fcfaf
https://doi.org/10.1063/1.3251265
https://doi.org/10.1063/1.3251265